Method and manufacturing device for manufacturing a titanium nitride thin film

Abstract

A method of manufacturing a titanium nitride thin film at the surface of a substrate by the chemical vapor deposition method (CVD method) includes supplying tetrakisdialkylamino titanium (TDAAT and ammonia into a reaction vessel, and heating it to a prescribed temperature under a low pressure of less than 100 Pa total pressure, wherein the partial pressure P TDAAT of the source-material gas is set in a range of 0<P NH3 /P TDAAT <10 with respect to the partial pressure P NH3 of the added ammonia gas.

What is claimed is:  
     
         1 ] A method of manufacturing a titanium nitride thin film at the surface of a substrate by chemical vapor deposition, comprising the steps of: 
 supplying an organometallic precursor and an added gas that reacts with the organometallic precursor into a reaction vessel; and    heating the supplied gases to a prescribed temperature under low pressure of less than 100 Pa total pressure, wherein the ratio of the partial pressure of the added gas over the partial pressure of the organometallic precursor is in a range of 0 to 10.    
     
     
         2 ] The method of claim  1 , wherein the organometallic precursor is tetrakisdialkylamino titanium (TDAAT).  
     
     
         3 ] The method of claim  1 , wherein the added gas is ammonia.  
     
     
         4 ] The method of claim  2 , wherein the added gas is ammonia.  
     
     
         5 ] The method of claim  1 , wherein the ratio is within the range of 0.6 to 8.  
     
     
         6 ] The method of claim  1 , wherein the ratio is within the range of 0.6 to 3.  
     
     
         7 ] The method of claim  2 , wherein the tetrakisdialkylamino titanium (TDAAT) is tetrakisdiethylamino titanium (TDEAT).  
     
     
         8 ] The method of claim  1 , wherein the prescribed temperature is within the range of 280° C. to 400°.  
     
     
         9 ] The method of claim  1 , wherein the prescribed temperature is about 300° C.  
     
     
         10 ] The method of claim  1 , wherein the prescribed temperature is about 350° C.  
     
     
         11 ] The method of claim  2 , wherein the tetrakisdialkylamino titanium (TDAAT) is tetrakisdimethylamino titanium (TDMAT).  
     
     
         12 ] The method of claim  2 , wherein the tetrakisdialkylamino titanium (TDAAT) is tetrakis (ethylmethylamino) titanium (TEMAT).  
     
     
         13 ] A device for manufacturing titanium nitride thin film, comprising: 
 a reaction vessel capable of vacuum pumping;    a vacuum pumping device capable of maintaining the interior of the reaction vessel at a pressure of less than a total pressure of 100 Pa by evacuating the interior of the reaction vessel;    a gas supply device for introducing a source-material gas into the reaction vessel;    a substrate holder that holds a substrate onto which the titanium nitride thin film is deposited;    a heating device that heats the substrate; and    the gas supply device comprises a mass flow controller and a pressure controller such as to make a partial pressure PSMG of the source-material gas with respect to a partial pressure PAG of the added gas satisfy the relationship 0<PAG/PSMG<10.    
     
     
         14 ] The device of claim  13 , wherein the source material gas is an organometallic precursor and the added gas is ammonia.  
     
     
         15 ] The device of claim  13 , wherein the source material gas is tetrakisdialkylamino titanium (TDAAT) and the added gas is ammonia.  
     
     
         16 ] The device of claim  13 , wherein the relationship is 0.6<PAG/PSMG<8.  
     
     
         17 ] The device of claim  13 , wherein the relationship is 0.6<P AG /P SMG <3.