Semiconductor device and a method of manufacturing the same

Abstract

Upon the manufacture of a non-leaded type semiconductor device having an encapsulater, and a gate cured resin and air vent cured resins which remain as a result of the exposure of leads and tub-suspension leads to a mounting surface of the encapsulater and the formation of the encapsulater, a groove through which a resin flows, is not provided over the full circumference of a cavity defined in a mold die for forming the encapsulater. A gate and air vents are provided outside an area in which no groove is defined. The flow of the resin between the cavity and each of the gate and air vents is made through a gap or space defined between each of the adjacent leads and each tub-suspension lead. If the leads and the tub-suspension leads are cut at a groove-free place, then the occurrence of resin waste and a resin crack can be restrained because the gate cured resin and the air vent cured resins have their surfaces which are identical to the leads and the tub-suspension leads and flat.

1 . A semiconductor device comprising: 
 an encapsulater comprising an insulating resin, lead exposed to a mounting surface of said encapsulater and a gate cured resin which remains as a result to form said encapsulater;    wherein said gate cured resin exists in a portion between the adjacent leads with a thickness identical to or smaller than the thickness of said each lead.    
     
     
         2 . A semiconductor device comprising: 
 an encapsulater comprising an insulating resin, lead and tub-suspension leads exposed to a mounting surface of said encapsulater and a gate cured resin which remains as a result to form said encapsulater;    wherein said gate cured resin exists in a portion between said each tub-suspension lead and said lead with a thickness identical to or smaller than the thickness of said each tub-suspension lead.    
     
     
         3 . A semiconductor device comprising: 
 an encapsulater comprising an insulating resin, leads and tub-suspension leads exposed to a mounting surface of said encapsulater and a gate cured resin and air vent cured resins which remains as a result to form said encapsulater;    wherein each of said gate cured resin and said air vent cured resins exists in a portion between said each tub-suspension lead and said lead with a thickness identical to or smaller than the thickness of each of resin burrs.    
     
     
         4 . A semiconductor device comprising: 
 an encapsulater comprising an insulating resin, leads and tub-suspension leads exposed to a mounting surface of said encapsulater and a gate cured resin and air vent cured resins which remains as a result to form said encapsulater;    wherein said gate cured resin and said air vent cured resins respectively extend from the edges of said encapsulater with a predetermined thickness and have obverse and reverse sides formed as flat surfaces.    
     
     
         5 . The semiconductor device according to  claim 4 , wherein said gate cured resin partly overlaps with said tub-suspension lead.  
     
     
         6 . The semiconductor device according to  claim 4 , wherein said air vent cured resins partly overlap with said tub-suspension leads respectively.  
     
     
         7 . The semiconductor device according to  claim 4 , wherein said gate cured resin partly overlaps with at least one lead.  
     
     
         8 . The semiconductor device according to  claim 4 , wherein said air vent cured resins partly overlap with at least one lead.  
     
     
         9 . A method of manufacturing a semiconductor device, comprising the steps of: 
 preparing a lead frame having a frame portion, a plurality of leads which protrude inwardly in the frame portion from the frame portion, and a plurality of tub-suspension leads which protrude inwardly in the frame portion from the frame portion and support a tub at leading end portions thereof;    fixing a semiconductor chip to one surface of the tub;    electrically connecting electrodes of the semiconductor chip and the leads;    covering the semiconductor chip and the leads with an encapsulater comprising an insulating resin and exposing the leads and the tub-suspension leads to a mounting surface of the encapsulater; and    cutting the leads and the tub-suspension leads,    wherein a vertical space defined by only the sides of the leads and the tub-suspension leads is used as a resin flow path to form the encapsulater, and the leads and the tub-suspension leads are cut at a resin portion cured in the vertical space defined by only the sides of the leads and the tub-suspension leads.    
     
     
         10 . The method according to  claim 9 , wherein a gate provided in a mold die is provided outside the vertical space defined by only the sides of the leads and the tub-suspension leads, and a resin passes through the gate and flows through the vertical space to thereby form the encapsulater.  
     
     
         11 . The method according to  claim 9 , wherein air vents defined in the mold die are provided outside the vertical space defined by only the sides of the leads and the tub-suspension leads, and the resin passes through the vertical space and goes through the air vents.  
     
     
         12 . A method of manufacturing a semiconductor device, comprising the steps of: 
 preparing a lead frame having a frame portion, a plurality of leads which protrude inwardly in the frame portion from the inside of the frame portion, and a plurality of tub-suspension leads which protrude inwardly in the frame portion from the inside of the frame portion and support a tub at leading end portions thereof;    fixing a semiconductor chip to one surface of the tub;    electrically connecting electrodes of the semiconductor chip and the leads;    covering the semiconductor chip and the leads with an encapsulater comprising an insulating resin and exposing the leads and the tub-suspension leads to a mounting surface of the encapsulater; and    cutting the leads and the tub-suspension leads,    wherein a vertical space thicker than the thickness of each of the leads and the tub-suspension leads is used as a resin flow path to form the encapsulater, and the leads and the tub-suspension leads are cut at a resin portion cured in the vertical space thicker than the thickness of each of the leads and the tub-suspension leads.    
     
     
         13 . The method according to  claim 12 , wherein a gate provided in a mold die is provided outside the vertical space thicker than the thickness of each of the leads and the tub-suspension leads, and a resin passes through the gate and flows through the vertical space to thereby form the encapsulater.  
     
     
         14 . The method according to  claim 12 , wherein air vents defined in the mold die are provided outside the vertical space thicker than the thickness of each of the leads and the tub-suspension leads, and the resin passes through the vertical space and goes through the air vents.  
     
     
         15 . The method according to  claim 12 , wherein a matrix type lead frame in which unit lead frame patterns are vertically and horizontally arranged in line, is prepared as the lead frame.  
     
     
         16 . The method according to  claim 12 , wherein said lead frame is given solder plating used for its mounting.