US2002025762A1PendingUtilityA1
Biocides for polishing slurries
Priority: Feb 16, 2000Filed: Feb 2, 2001Published: Feb 28, 2002
Est. expiryFeb 16, 2020(expired)· nominal 20-yr term from priority
C09G 1/02C09K 3/1463
34
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Claims
Abstract
Compounds containing both a sulfur and a nitrogen in a five-membered ring structure are used as biocides in polishing solutions and slurries.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . An aqueous solution, for use in CMP of semiconductor wafers wherein a fixed abrasive polishing pad is used, which contains essentially no abrasive particles and which is protected from bacterial and fungal activity by means of a biocide comprising an organic compound with a five membered ring containing both a sulfur and a nitrogen group in said ring.
2 . An aqueous slurry, for use in CMP of semiconductor wafers, which contains abrasive particles and which is protected from bacterial and fungal activity by means of a biocide comprising an organic compound with a five membered ring containing both a sulfur and a nitrogen group in said ring.
3 . The solution of claim 1 wherein said biocide is from the group comprising 2-methyl-4-isothiazolin-3-one and 5-chloro-2-methyl-4-isothiazolin-3-one.
4 . The slurry of claim 2 wherein said biocide is from the group comprising 2-methyl-4-isothiazolin-3-one and 5-chloro-2-methyl-4-isothiazolin-3-one.
5 . The solution of claim 1 wherein said biocide is present in the range of 0.01% to 1% by weight of said solution.
6 . The slurry of claim 2 wherein said biocide is present in the range of 0.01% to 1% by weight of said slurry.
7 . A method of polishing a semiconductor wafer comprising: applying a solution at a polishing interface between a fixed abrasive polishing pad and said wafer, said solution comprising essentially no abrasive particles and which is protected from bacterial and fungal activity by means of a biocide comprising an organic compound with a five membered ring containing both a sulfur and a nitrogen group in said ring.
8 . A method of polishing a semiconductor wafer comprising: applying a slurry at a polishing interface between a polishing pad and said wafer, said solution comprising abrasive particles and which is protected from bacterial and fungal activity by means of a biocide comprising an organic compound with a five membered ring containing both a sulfur and a nitrogen group in said ring.
9 . A method according to claim 5 wherein said biocide is from the group comprising 2-methyl-4-isothiazolin-3-one and 5-chloro-2-methyl-4-isothiazolin-3-one.
10 . A method according to claim 6 wherein said biocide is from the group comprising 2-methyl-4-isothiazolin-3-one and 5-chloro-2-methyl-4-isothiazolin-3-one.
11 . A method according to claim 5 wherein said biocide is present in the range of 0.01% to 1% by weight of said solution.
12 . A method according to claim 6 wherein said biocide is present in the range of 0.01% to 1% by weight of said slurry.Cited by (0)
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