US2002053663A1PendingUtilityA1
High density cobalt-manganese coprecipitated nickel hydroxide and process for its production
Est. expiryNov 6, 2020(expired)· nominal 20-yr term from priority
C01G 53/82C01G 51/82H01M 10/0525C01P 2004/62C01P 2006/11H01B 1/08C01P 2006/10C01P 2004/61C01P 2006/32C01P 2004/01C01P 2006/12H01M 4/505H01M 4/525C01P 2004/03Y02E60/10
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Claims
Abstract
The present invention provides high density cobalt-manganese coprecipitated nickel hydroxide, particularly having a tapping density of 1.5 g/cc or greater, and a process for its production characterized by continuous supply of an aqueous solution of a nickel salt which contains a cobalt salt and a manganese salt, of a complexing agent and of an alkali metal hydroxide, into a reactor either in an inert gas atmosphere or in the presence of a reducing agent, continuous crystal growth and continuous removal.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . High density cobalt-manganese coprecipitated nickel hydroxide with a tapping density of 1.5 g/cc or greater.
2 . High density cobalt-manganese coprecipitated nickel hydroxide according to claim 1 , characterized in that, where said cobalt-manganese coprecipitated nickel hydroxide is represented as (Ni (1-x-y) Co x Mn y )(OH) 2 , 1/10≦x≦1/3 and 1/20≦y≦1/3.
3 . A process for production of high density cobalt-manganese coprecipitated nickel hydroxide of claim 1 , characterized by continuous supply of an aqueous solution of a nickel salt which contains a cobalt salt and a manganese salt, of a complexing agent and of an alkali metal hydroxide, into a reactor either in an inert gas atmosphere or in the presence of a reducing agent, continuous crystal growth and continuous removal.
4 . The process of claim 3 wherein said reducing agent is hydrazine.Join the waitlist — get patent alerts
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