US2002053663A1PendingUtilityA1

High density cobalt-manganese coprecipitated nickel hydroxide and process for its production

Assignee: TANAKA CHEMICAL CORPPriority: Nov 6, 2000Filed: Nov 2, 2001Published: May 9, 2002
Est. expiryNov 6, 2020(expired)· nominal 20-yr term from priority
C01G 53/82C01G 51/82H01M 10/0525C01P 2004/62C01P 2006/11H01B 1/08C01P 2006/10C01P 2004/61C01P 2006/32C01P 2004/01C01P 2006/12H01M 4/505H01M 4/525C01P 2004/03Y02E60/10
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Claims

Abstract

The present invention provides high density cobalt-manganese coprecipitated nickel hydroxide, particularly having a tapping density of 1.5 g/cc or greater, and a process for its production characterized by continuous supply of an aqueous solution of a nickel salt which contains a cobalt salt and a manganese salt, of a complexing agent and of an alkali metal hydroxide, into a reactor either in an inert gas atmosphere or in the presence of a reducing agent, continuous crystal growth and continuous removal.

Claims

exact text as granted — not AI-modified
What is claimed is:  
     
         1 . High density cobalt-manganese coprecipitated nickel hydroxide with a tapping density of 1.5 g/cc or greater.  
     
     
         2 . High density cobalt-manganese coprecipitated nickel hydroxide according to  claim 1 , characterized in that, where said cobalt-manganese coprecipitated nickel hydroxide is represented as (Ni (1-x-y) Co x Mn y )(OH) 2 , 1/10≦x≦1/3 and 1/20≦y≦1/3.  
     
     
         3 . A process for production of high density cobalt-manganese coprecipitated nickel hydroxide of  claim 1 , characterized by continuous supply of an aqueous solution of a nickel salt which contains a cobalt salt and a manganese salt, of a complexing agent and of an alkali metal hydroxide, into a reactor either in an inert gas atmosphere or in the presence of a reducing agent, continuous crystal growth and continuous removal.  
     
     
         4 . The process of  claim 3  wherein said reducing agent is hydrazine.

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