Semiconductor light-emitting element

Abstract

A device and a method for fabricating said device provides a semiconductor light-emitting element having an electrode and a protective film layer that is sealed with an insulating resin, which is hardened at high temperature. After completion of the hardening process, the semiconductor light-emitting element is heat treated in an atmosphere of normal or higher humidity. Preferably, the heat treatment is performed at a temperature of 60° C. or higher in an atmosphere having an absolute humidity of 10 KPa or higher. When the heat treatment is performed at or above 10 KPa, the heat treatment can be completed within a shorter timeframe in comparison to such a device heat treated at an absolute humidity of less than 10 kPa.

What is claimed is:  
     
         1 . A semiconductor light-emitting element comprising: 
 a chip having at least an electrode and a protective film layer;    an insulating resin for sealing said chip;    wherein said insulating resin is hardened at high temperature and heat-treated in an atmosphere having humidity.    
     
     
         2 . A semiconductor light-emitting element according to  claim 1 , wherein the heat treatment is performed at a temperature of 60° C. or higher.  
     
     
         3 . A semiconductor light-emitting element according to  claim 1 , wherein the atmosphere has an absolute humidity of not less than 10 KPa.  
     
     
         4 . A semiconductor light-emitting element according to  claim 2 , wherein the atmosphere has an absolute humidity of not less than 10 KPa.  
     
     
         5 . A semiconductor light-emitting element according to  claim 1 , wherein the atmosphere has an absolute humidity of not less than 50 KPa.  
     
     
         6 . A semiconductor light-emitting element according to  claim 2 , where the atmosphere has an absolute humidity of not less than 50 KPa.  
     
     
         7 . A semiconductor light-emitting element according to  claim 1 , wherein the heat treatment is performed at a pressure of 1 atm or higher.  
     
     
         8 . A semiconductor light-emitting element according to  claim 2 , wherein the heat treatment is performed at a pressure of 1 atm or higher.  
     
     
         9 . A semiconductor light-emitting element according to  claim 3 , wherein the heat treatment is performed at a pressure of 1 atm or higher.  
     
     
         10 . A semiconductor light-emitting element according to  claim 4 , wherein the heat treatment is performed at a pressure of 1 atm or higher.  
     
     
         11 . A semiconductor light-emitting element according to  claim 5 , wherein the heat treatment is performed at a pressure of 1 atm or higher.  
     
     
         12 . A semiconductor light-emitting element according to  claim 6 , wherein the heat treatment is performed at a pressure of 1 atm or higher.