Film processing system

Abstract

An apparatus for chemical vapor deposition includes a dispenser for dispensing a precursor to a vaporizer positioned within a vaporization chamber. A delivery conduit joins the vaporization with a process chamber. A flow meter is positioned within the delivery conduit for measuring the flow of precursor through the delivery conduit. A flow controller is likewise positioned within the delivery conduit for controlling the flow of precursor in response to the measured flow rate.

What is claimed is:  
     
         1 . A method for forming stacked gate dielectrics comprising depositing silica by reacting TEOS with N 2 O at temperatures less than 600° C.  
     
     
         2 . A method for performing multiple depositions on a wafer, comprising the steps of: 
 vaporizing a first precursor in a vaporization chamber;    delivering the first vaporized precursor to a process chamber;    depositing the first vaporized precursor on a substrate in the process chamber; then    vaporizing a second precursor;    delivering the second vaporized precursor to the process chamber; and    depositing the second vaporized precursor on the substrate in the process chamber.    
     
     
         3 . The method of  claim 2  wherein the second precursor is vaporized in a second vaporization chamber.  
     
     
         4 . The method of  claim 3  wherein the first precursor and the second precursor are vaporized by delivering the first precursor and the second precursor to respective vaporizers in each vaporization chamber.  
     
     
         5 . The method of  claim 2  wherein each precursor is delivered onto a heated, sloped vaporizer surface across which the precursor spreads, the precursor vaporizing as it spreads.  
     
     
         6 . The method of  claim 2  wherein the substrate remains stationary throughout the method.  
     
     
         7 . The method of  claim 2  wherein the first precursor is a copper source and the second precursor is an aluminum source.  
     
     
         8 . The method of  claim 2  wherein the first precursor is a silicon source and the second precursor is a tantalum source.