Cleaning solution and method for cleaning semiconductor substrates after polishing of copper film

Abstract

A cleaning solution for cleaning a semiconductor substrate is formed by mixing an amount of citric acid and an amount of ammonia in deionized water. In one embodiment, the amount of citric acid is in a range from about 0.18% by weight to about 0.22% by weight and the amount of ammonia is in a range from about 0.0225% by weight to about 0.0275% by weight, and the cleaning solution has a pH of about 4. A method for cleaning a semiconductor substrate having a polished copper layer in which a concentrated cleaning solution is mixed with deionized water proximate to a scrubbing apparatus also is described.

What is claimed is:  
     
         1 . A cleaning solution formed by mixing an amount of citric acid and an amount of ammonia in deionized water, the amount of citric acid being in a range from about 0.18% by weight to about 0.22% by weight, the amount of ammonia being in a range from about 0.0225% by weight to about 0.0275% by weight, and the cleaning solution having a pH of about 4.  
     
     
         2 . The cleaning solution of  claim 1 , wherein a source of ammonia is a solution formed by mixing ammonia in deionized water.  
     
     
         3 . The cleaning solution of  claim 2 , wherein the amount of citric acid is about 0.2% by weight and the amount of ammonia is about 0.025% by weight.  
     
     
         4 . A concentrated cleaning solution for cleaning semiconductor substrates, the concentrated cleaning solution being formed by mixing an amount of citric acid and an amount of ammonia in deionized water, the amount of citric acid being in a range from about 3.6% by weight to about 4.4% by weight, the amount of ammonia being in a range from about 0.45% by weight to about 0.55% by weight, and the concentrated cleaning solution having a pH of about 3.8.  
     
     
         5 . The concentrated cleaning solution of  claim 4 , wherein a source of ammonia is a solution formed by mixing ammonia in deionized water.  
     
     
         6 . The concentrated cleaning solution of  claim 5 , wherein the amount of citric acid is about 4% by weight and the amount of ammonia is about 0.5% by weight.  
     
     
         7 . A method for cleaning a semiconductor substrate having a polished copper layer comprising: 
 providing a concentrated cleaning solution formed by mixing an amount of citric acid and an amount of ammonia in deionized water, the amount of citric acid being in a range from about 3.6% by weight to about 4.4% by weight, the amount of ammonia being in a range from about 0.45% by weight to about 0.55% by weight, and the concentrated cleaning solution having a pH of about 3.8;    placing the semiconductor substrate having a polished copper layer in a scrubbing apparatus;    mixing one unit volume of the concentrated cleaning solution with 20 unit volumes of deionized water proximate to the scrubbing apparatus to obtain a cleaning solution having a pH of about 4; and    scrubbing the semiconductor substrate in the scrubbing apparatus in the presence of the cleaning solution.