Apparatus for forming an epitaxial silicon wafer with a denuded zone

Abstract

An apparatus and method are provided for forming a denuded zone and an epitaxial layer on a semiconductor wafer used in manufacturing electronic components. The denuded zone and epitaxial layer are formed in one chamber. The apparatus includes a plurality of upstanding pins immovably mounted on a susceptor and maintain a semiconductor wafer spaced from the susceptor during both application of the epitaxial layer and formation of the denuded zone. Fast cooling of the wafer is accomplished by having the wafer out of conductive heat transfer relation with the susceptor during cooling thereof.

What is claimed is:  
     
         1 . An apparatus for producing a semiconductor wafer with a denuded zone, said apparatus including: 
 a housing defining a chamber therein, said housing including a door that is selectively movable between open and closed positions providing access to the chamber;    a source of heat operably associated with said chamber;    a susceptor mounted in said chamber and having an upwardly facing surface;    a plurality of pins projecting from said upwardly facing surface and immovable relative to said susceptor, said pins each having a free end spaced from said upwardly facing surface a distance of at least about 1 mm to thereby to support a semiconductor wafer in spaced relation from said upwardly facing surface; and    a drive operably connected to said susceptor and operable to rotate said susceptor.    
     
     
         2 . An apparatus as set forth in  claim 1  wherein the distance is at least about 2 mm.  
     
     
         3 . An apparatus as set forth in  claim 1  wherein there are at least three said pins.