Composite material manufacturing method thereof, substrate processing apparatus and manufacturing method thereof, substrate mouting stage and manufacturing method thereof, and substrate processing method

Abstract

The invention provides a substrate processing apparatus using a composite material which permits avoidance of occurrence of damages caused by the difference in thermal expansion between different materials and can be with stand the use at high temperatures. The substrate processing apparatus for processing a substrate is partially (for example, a substrate mounting stage) composed of a composite material 11 consisting of a matrix 12 comprising a ceramics member made of, for example, cordierite ceramics, aluminum nitride and/or a texture filled with an aluminum-based material (for example, aluminum or aluminum and silicon), and a ceramics layer (comprising, for example, Al 2 O 3 and/or AlN) provided on the surface of the matrix 12.

What is claimed is:  
     
         1 . A composite material comprising a matrix which comprises a ceramics member, having a texture filled with an aluminum-based material, and a ceramics layer provided on the surface of said matrix.  
     
     
         2 . A composite material according to  claim 1 , wherein, when assuming that the matrix has a linear expansion coefficient    1  [unit: 10 −6 /K], the ceramics layer has a linear expansion coefficient    2  [unit: 10 −6 /K] satisfying (α 1 −3)≦α 2 ≦(α 1 +3).  
     
     
         3 . A composite material according to  claim 2 , wherein the ceramics member composing the matrix comprises cordierite ceramics; the aluminum-based material composing the matrix comprises aluminum and silicon; and the ceramics layer comprises Al 2 O 3 .  
     
     
         4 . A composite material according to  claim 3 , wherein a volumetric ratio of cordierite ceramics to the aluminum-based material is determined so as to satisfy (α 1 −3)≦α 2 ≦(α 1 +3).  
     
     
         5 . A composite material according to  claim 3 , wherein the volumetric ratio of cordierite ceramics to the aluminum-based material is within a range of from 25/75 to 75/25.  
     
     
         6 . A composite material according to  claim 3 , wherein said aluminum-based material contains silicon in an amount within a range of from 12 to 35 vol. %.  
     
     
         7 . A composite material according to  claim 3 , wherein said ceramics member comprises a fired mixture of cordierite ceramics powder and cordierite ceramics fiber.  
     
     
         8 . A composite material according to  claim 7 , wherein the ratio of said cordierite ceramics fiber in said fired mixture is within a range of from 1 to 20 vol. %.  
     
     
         9 . A composite material according to  claim 7 , wherein said cordierite ceramics powder has an average particle size within a range of from 1 to 100 μm, and said cordierite ceramics fiber has an average diameter within a range of from 2 to 10 μm and an average length within a range of from 0.1 to 10 mm.  
     
     
         10 . A composite material according to  claim 7 , wherein said ceramics member has a porosity within a range of from 25 to 75%.  
     
     
         11 . A composite material according to  claim 2 , wherein said ceramics member composing the matrix comprises aluminum nitride; said aluminum-based material composing the matrix comprises aluminum or aluminum and silicon; and the material of said ceramics layer comprises Al 2 O 3  or aluminum nitride.  
     
     
         12 . A composite material according to  claim 11 , wherein a volumetric ratio of aluminum nitride to the aluminum-based material is determined so as to satisfy (α 1 −3)≦α 2 ≦(α 1 +3).  
     
     
         13 . A composite material according to  claim 11 , wherein the volumetric ratio of aluminum nitride to the aluminum-based material is within a range of from 40/60 to 80/20.  
     
     
         14 . A composite material according to  claim 11 , wherein the aluminum-based material composing the matrix comprises aluminum and silicon and contains silicon in an amount within a range of from 12 to 35 vol. %.  
     
     
         15 . A composite material according to  claim 2 , wherein said ceramics member composing the matrix comprises silicon carbide; said aluminum-based material composing the matrix comprises aluminum or aluminum and silicon; and said ceramics layer comprises Al 2 O 3  or aluminum nitride.  
     
     
         16 . A composite material according to  claim 15 , wherein a volumetric ratio of silicon carbide to the aluminum-based material is determined so as to satisfy (α 1 −3)≦α 2 ≦(α 1 +3).  
     
     
         17 . A composite material according to  claim 15 , wherein the volumetric ratio of silicon carbide to the aluminum-based material is within a range of from 40/60 to 80/20.  
     
     
         18 . A composite material according to  claim 15 , wherein said aluminum-based material composing the matrix comprises aluminum and silicon, and contains silicon in an amount within a range of from 12 to 35 vol. %.  
     
     
         19 . A composite material according to  claim 1 , wherein said ceramics layer is formed on the surface of said matrix by the flame spraying method.  
     
     
         20 . A composite material according to  claim 1 , wherein said ceramics layer is attached to the surface of said matrix by brazing.  
     
     
         21 . A method for manufacturing a composite material, which comprises: 
 (A) a step of filling a texture of a ceramics member with an aluminum-based material, thereby preparing a matrix comprising said ceramics member having a texture is filled with said aluminum-based material; and    (B) a step of providing a ceramics layer on the surface of said matrix.    
     
     
         22 . A method for manufacturing a composite material, according to  claim 21 , wherein said process (A) comprises the steps of arranging the ceramics layer comprising porous cordierite ceramics in a vessel; pouring an aluminum-based material comprising molten aluminum and silicon; and filling the ceramics member with the aluminum-based material by the high-pressure casting method.  
     
     
         23 . A method for manufacturing a composite material, according to  claim 22 , wherein a volumetric ratio of cordierite ceramics to the aluminum-based material is determined so that, when assuming the matrix to have a linear expansion coefficient α 1  [unit: 10 −6 /K], the ceramics layer has a linear expansion coefficient α 2  [unit: 10 −6 /K] within a range of (α 1 −3)≦α 2 ≦(α 1 +3).  
     
     
         24 . A method for manufacturing a composite material, according to  claim 22 , wherein the volumetric ratio of cordierite to the aluminum-based material is within a range of from 25/75 to 75/25.  
     
     
         25 . A method for manufacturing a composite material, according to  claim 22 , wherein said aluminum-based material contains silicon in an amount within a range of from 12 to 35 vol. %.  
     
     
         26 . A method for manufacturing a composite material, according to  claim 22 , wherein said ceramics member is prepared by firing a mixture of cordierite ceramics powder and cordierite ceramics fiber.  
     
     
         27 . A method for manufacturing a composite material, according to  claim 26 , wherein the ratio of the cordierite ceramics fiber in said fired mixture is within a range of from 1 to 20 vol. %.  
     
     
         28 . A method for manufacturing a composite material, according to  claim 26 , wherein said cordierite ceramics powder has an average particle size within a range of from 1 to 100 μm, and said cordierite ceramics fiber has an average diameter within a range of from 2 to 10 μm and an average length within a range of from 0.1 to 10 mm.  
     
     
         29 . A method for manufacturing a composite material, according to  claim 26 , wherein the mixture of cordierite ceramics powder and cordierite ceramics fiber is fired at a temperature within a range of from 800 to 1,200° C.  
     
     
         30 . A method for manufacturing a composite material, according to  claim 26 , wherein the ceramics member has a porosity within a range of from 25 to 75%.  
     
     
         31 . A method for manufacturing a composite material, according to  claim 22 , wherein temperature of the ceramics member upon casting the aluminum-based material into the vessel is set within a range of from 500 to 1,000° C., and the absolute pressure applied upon filling the ceramics member with the aluminum-based material by the high-pressure casting method is set within a range of from 200 to 1,500 kgf/cm 2 .  
     
     
         32 . A method for manufacturing a composite material, according to  claim 21 , wherein the process (A) comprises the step of causing the aluminum-based material comprising molten aluminum or aluminum and silicon in a non-pressurized state to penetrate into the ceramics member formed from aluminum nitride particles in accordance with the non-pressurized metal penetrating method.  
     
     
         33 . A method for manufacturing a composite material, according to  claim 32 , wherein, when assuming the matrix to have a linear expansion coefficient α 1  [unit: 10 −6 /K], a volumetric ratio of aluminum nitride particles to the aluminum-based material so that the linear expansion coefficient α 2  [unit: 10 −6 /K] of the ceramics layer satisfies (α 1 −3)≦α 2 ≦(α 1 +3).  
     
     
         34 . A method for manufacturing a composite material, according to  claim 32 , wherein the volumetric ratio of aluminum nitride to the aluminum-based material is within a range of from 40/60 to 80/20.  
     
     
         35 . A method for manufacturing a composite material, according to  claim 32 , wherein the aluminum nitride particles have an average particle size within a range of from 10 to 100 μm.  
     
     
         36 . A method for manufacturing a composite material, according to  claim 32 , wherein the aluminum-based material composing the matrix comprises aluminum and silicon, and contains silicon in an amount within a range of from 12 to 35 vol. %.  
     
     
         37 . A method for manufacturing a composite material, according to  claim 21 , wherein the process (A) comprises the step of causing the aluminum-based material comprising molten aluminum or aluminum and silicon in a non-pressurized state to penetrate into the ceramics member formed from silicon carbide particles in accordance with the non-pressurized metal penetrating method.  
     
     
         38 . A method for manufacturing a composite material, according to  claim 21 , wherein the process (A) comprises the steps of arranging the ceramics member comprising silicon carbide in a vessel, casting the aluminum-based material comprising molten aluminum or aluminum and silicon into the vessel, and filling the ceramics member with the aluminum-based material by the high-pressure casting method.  
     
     
         39 . A method for manufacturing a composite material, according to  claim 38 , wherein temperature of the ceramics member upon casting the aluminum-based material into the vessel is set within a range of from 500 to 1,000° C., and the absolute pressure applied upon filling the ceramics member with the aluminum-based material by the high-pressure casting method is set within a range of from 200 to 1,500 kgf/cm 2 .  
     
     
         40 . A method for manufacturing a composite material, according to  claim 37  or  38 , wherein, when assuming the matrix to have a linear expansion coefficient α 1  [unit: 10 −6 /K], a volumetric ratio of aluminum nitride particles to the aluminum-based material is determined so that the linear expansion coefficient α 2  [unit: 10 −6 /K] of the ceramics layer contains silicon in an amount within a range of from 12 to 35 vol. %.  
     
     
         41 . A method for manufacturing a composite material, according to  claim 37  or  38 , wherein the volumetric ratio of silicon carbide to the aluminum-based material is within a range of from 40/60 to 80/20.  
     
     
         42 . A method for manufacturing a composite material, according to  claim 37  or  38 , wherein the silicon carbide particles have an average particle size within a range of from 1 to 100 μm.  
     
     
         43 . A method for manufacturing a composite material, according to  claim 37  or  38 , wherein the aluminum-based material composing the matrix comprises aluminum and silicon, and contains silicon in an amount within a range of from 12 to 35 vol. %.  
     
     
         44 . A method for manufacturing a composite material, according to  claim 21 , wherein the ceramics layer comprises Al 2 O 3  or aluminum nitride; and 
 wherein the process (B) comprises the step of forming the ceramics layer on the surface of the matrix by the flame spraying method.    
     
     
         45 . A method for manufacturing a composite material, according to  claim 21 , wherein the ceramics layer comprises Al 2 O 3  or aluminum nitride; and 
 wherein the process (B) comprises the step of attaching the ceramics layer onto the surface of the matrix by brazing.    
     
     
         46 . A composite material composing a part of a processing apparatus for processing a substrate, comprising: 
 a matrix comprising a ceramics member, the texture of which is filled with an aluminum-based material and a ceramics layer provided on the surface of said matrix.    
     
     
         47 . A composite material according to  claim 46 , wherein said substrate processing apparatus applies plasma etching, plasma CVD or sputtering to the substrate; and 
 wherein a part of said substrate processing apparatus composed of a composite material is a substrate mounting stage having an electrostatic chucking function and temperature control means.    
     
     
         48 . A composite material according to  claim 46 , wherein said substrate processing apparatus applies plasma etching or plasma CVD to the substrate; and 
 wherein a part of said substrate processing apparatus composed of the composite material is formed by side wall and/or a ceiling plate of the substrate processing apparatus.    
     
     
         49 . A composite material according to  claim 46 , wherein said substrate processing apparatus applies plasma etching to the substrate; and 
 wherein a part of said substrate processing apparatus composed of the composite material comprises a parallel flat upper opposite electrode.    
     
     
         50 . A composite material according to  claim 46 , wherein, when assuming the matrix to have a linear expansion coefficient α 1  [unit: 10 −6 /K], the ceramics layer has a linear expansion coefficient α 2  [unit: 10 −6 /K] satisfying ((α 1 −3)≦α 2 ≦(α 1 +3).  
     
     
         51 . A composite material according to  claim 50 , wherein the ceramics member composing the matrix comprises cordierite ceramics; the aluminum-based material composing the matrix comprises aluminum and silicon; and the ceramics layer comprises Al 2 O 3 .  
     
     
         52 . A composite material according to  claim 51 , wherein a volumetric ratio of cordierite ceramics to the aluminum-based material is determined so as to satisfy (α 1 −3)≦α 2 ≦(α 1 +3).  
     
     
         53 . A composite material according to  claim 51 , wherein the volumetric ratio of cordierite ceramics to the aluminum-based material is within a range of from 25/75 to 75/25.  
     
     
         54 . A composite material according to  claim 51 , wherein the aluminum-based material contains silicon in an amount within a range of from 12 to 35 vol. %.  
     
     
         55 . A composite material according to  claim 51 , wherein said ceramics member comprises a fired mixture of cordierite ceramics powder and cordierite ceramics fiber.  
     
     
         56 . A composite material according to  claim 55 , wherein the ratio of said cordierite ceramics fiber in said fired mixture is within a range of from 1 to 20 vol. %.  
     
     
         57 . A composite material according to  claim 55 , wherein said cordierite ceramics powder has an average particle size within a range of from 1 to 100 μm, and said cordierite ceramics fiber has an average diameter within a range of from 2 to 10 μm and an average length within a range of from 0.1 to 10 mm.  
     
     
         58 . A composite material according to  claim 55 , wherein said ceramics member has a porosity within a range of from 25 to 75%.  
     
     
         59 . A composite material according to  claim 50 , wherein said ceramics member composing the matrix comprises aluminum nitride; said aluminum-based material composing the matrix comprises aluminum or aluminum and silicon; and the material of said ceramics layer comprises Al 2 O 3  or aluminum nitride.  
     
     
         60 . A composite material according to  claim 59 , wherein a volumetric ratio of aluminum nitride to the aluminum-based material is determined so as to satisfy (α 1 −3)≦α 2 ≦(α 1 +3).  
     
     
         61 . A composite material according to  claim 59 , wherein the volumetric ratio of aluminum nitride to the aluminum-based material is within a range of from 40/60 to 80/20.  
     
     
         62 . A composite material according to  claim 59 , wherein the aluminum-based material composing the matrix comprises aluminum and silicon and contains silicon in an amount within a range of from 12 to 35 vol. %.  
     
     
         63 . A composite material according to  claim 50 , wherein said ceramics member composing the matrix comprises silicon carbide; said aluminum-based material composing the matrix comprises aluminum or aluminum and silicon; said ceramics layer comprises Al 2 O 3  or aluminum nitride.  
     
     
         64 . A composite material according to  claim 63 , wherein a volumetric ratio of silicon carbide to the aluminum-based material is determined so as to satisfy (α 1 −3)≦α 2 (α 1 +3).  
     
     
         65 . A composite material according to  claim 63 , wherein the volumetric ratio of silicon carbide to the aluminum-based material is within a range of from 40/60 to 80/20.  
     
     
         66 . A composite material according to  claim 63 , wherein said aluminum-based material composing the matrix comprises aluminum and silicon, and contains silicon in an amount within a range of from 12 to 35 vol. %.  
     
     
         67 . A composite material according to  claim 46 , wherein said ceramics layer is formed on the surface of said matrix by the flame spraying method.  
     
     
         68 . A composite material according to  claim 46 , wherein said ceramics layer is attached to the surface of said matrix by brazing.  
     
     
         69 . A method for manufacturing a composite material composing a part of a processing apparatus for processing a substrate, which comprises: 
 (A) a step of filling a texture of a ceramics member with an aluminum-based material, thereby preparing a matrix comprising said ceramics member having a texture filled with said aluminum-based material; and    (B) a step of providing a ceramics layer on the surface of said matrix.    
     
     
         70 . A method for manufacturing a composite material, according to  claim 69 , wherein said substrate processing apparatus applies plasma etching, plasma CVD or sputtering to the substrate; and 
 wherein a part of said substrate processing apparatus composed of a composite material is a substrate mounting stage having an electrostatic checking function and temperature control means.    
     
     
         71 . A method for manufacturing a composite material, according to  claim 69 , wherein said substrate processing apparatus applies plasma etching or plasma CVD to the substrate; and 
 wherein a part of said substrate processing apparatus composed of the composite material is formed by side wall and/or a ceiling plate of the substrate processing apparatus.    
     
     
         72 . A method for manufacturing a composite material, according to  claim 69 , wherein said substrate processing apparatus applies plasma etching to the substrate; and 
 wherein a part said substrate processing apparatus composed of the composite material comprises a parallel flat upper opposite electrodes.    
     
     
         73 . A method for manufacturing a composite material, according to  claim 69 , wherein said process (A) comprises the steps of arranging the ceramics layer comprising porous cordierite ceramics in a vessel; casting an aluminum-based material comprising molten aluminum and silicon; and filling the ceramics member with the aluminum-based material by the high-pressure casting method.  
     
     
         74 . A method for manufacturing a composite material, according to  claim 73 , wherein a volumetric ratio of cordierite ceramics to the aluminum-based material is determined so that, when assuming the matrix to have a linear expansion coefficient α, [unit: 10 −6 /K], the ceramics layer has a linear expansion coefficient α 2 [unit: 10 −6 /K] within a range of (α 1 −3)≦α 2 (α 1 +3).  
     
     
         75 . A method for manufacturing a composite material, according to  claim 73 , wherein the volumetric ratio of cordierite to the aluminum-based material is within a range of from 25/75 to 75/25.  
     
     
         76 . A method for manufacturing a composite material, according to  claim 73 , wherein said aluminum-based material contains silicon in an amount within a range of from 12 to 35 vol. %.  
     
     
         77 . A method for manufacturing a composite material, according to  claim 73 , wherein said ceramics member is prepared by firing a mixture of cordierite ceramics powder and cordierite ceramics fiber.  
     
     
         78 . A method for manufacturing a composite material, according to  claim 77 , wherein the ratio of the cordierite ceramics fiber in said fired mixture is within a range of from 1 to 20 vol. %.  
     
     
         79 . A method for manufacturing a composite material, according to  claim 77 , wherein said cordierite ceramics powder has an average particle size within a range of from 1 to 100 μm, and said cordierite ceramics fiber has an average diameter within a range of from 2 to 10 μm and an average length within a range of from 0.1 to 10 mm.  
     
     
         80 . A method for manufacturing a composite material, according to  claim 77 , wherein the mixture of cordierite ceramics powder and cordierite ceramics fiber is fired at a temperature within a range of from 800 to 1,200° C.  
     
     
         81 . A method for manufacturing a composite material, according to  claim 77 , wherein the ceramics member has a porosity within a range of from 25 to 75%.  
     
     
         82 . A method for manufacturing a composite material, according to  claim 73 , wherein temperature of the ceramics member upon casting the aluminum-based material into the vessel is set within a range of from 500 to 1,000° C., and the absolute pressured applied upon filling the ceramics member with the aluminum-based material by the high-pressure casting method is set within a range of from 200 to 1,500 kgf/cm 2 .  
     
     
         83 . A method for manufacturing a composite material, according to  claim 69 , wherein the process (A) comprises the step of causing the aluminum-based material comprising molten aluminum or aluminum and silicon in a now pressurized state to penetrate into the ceramics member formed from aluminum nitride particles in accordance with the non-pressurized metal penetrating method. according to  claim 69 , wherein the process (A) comprises the step of causing the aluminum-based material comprising molten aluminum or aluminum and silicon in a non-pressurized state to penetrate into the ceramics member formed from silicon carbide particles in accordance with the non-pressurized metal penetrating method.  
     
     
         89 . A method for manufacturing a composite material, according to  claim 69 , wherein the process (A) comprises the steps of arranging the ceramics member composing silicon carbide in a vessel, casting the aluminum-based material comprising molten aluminum or aluminum and silicon into the vessel, and filling the ceramics member with the aluminum-based material by the high-pressure casting method.  
     
     
         90 . A method for manufacturing a composite material, according to claim  89 , wherein temperature of the ceramics member upon casing he aluminum-based material into the vessel is set within a range of from 500 to 1,000° C., and the absolute pressure applied upon filling the ceramics member with the aluminum-based material by the high-pressure casting method in set within a range of from 200 to 1,500 kgf/cm 2 .  
     
     
         91 . A method for manufacturing a composite material, according to claim  88  or  89 , wherein, when assuming the matrix to have a linear expansion coefficient α 1 [unit: 10 −6 /K], a volumetric ratio of aluminum nitride particles to the aluminum-based material is determined so that the linear expansion coefficient α 2 [unit: 10 −6 /K] of the ceramics layer contains silicon in an amount within a range of from 12 to 35 vol. %.  
     
     
         92 . A method for manufacturing a composite material, according to claim  88  or  89 , wherein the volumetric ratio of silicon carbide to the aluminum-based material is within a range of from 40/60 to 80/20.  
     
     
         93 . A method for manufacturing a composite material, according to claim  88  or  89 , wherein the silicon carbide particles have an average particle size within a range of from 1 to  100 μm.    
     
     
         94 . A method for manufacturing a composite material, according to claim  88  or  89 , wherein the aluminum-based material composing the matrix comprises aluminum and silicon, and contains silicon in an amount within a range of from 12 to 35 vol.  
     
     
         95 . A method for manufacturing a composite material, according to  claim 69 , wherein the ceramics layer comprises Al 2 O 3  or aluminum nitride; and 
 wherein the process (B) comprises the step of forming the ceramics layer on the surface of the matrix by the flame spraying method.    
     
     
         96 . A method for manufacturing a composite material, according to  claim 69 , wherein the ceramics layer comprises Al 2 O 3  or aluminum nitride; and 
 wherein the process (B) comprises the step of attaching the ceramics layer onto the surface of the substrate by brazing.    
     
     
         97 . A substrate processing apparatus for processing a substrate, wherein: 
 a part of said substrate processing apparatus comprises a matrix comprising a ceramics member, the texture of which is filled with an aluminum-based material and a ceramics layer provided on the surface of said matrix.    
     
     
         98 . A substrate processing apparatus according to  claim 97 , wherein said substrate processing apparatus applies plasma etching, plasma CVD or sputtering; and 
 wherein a part of said substrate processing apparatus composed of a composite material is a substrate mounting stage having an electrostatic chucking function and temperature control means.    
     
     
         99 . A substrate processing apparatus according to  claim 98 , wherein said substrate mounting stage is used as an electrode and the ceramics layer has an electrostatic chucking function.  
     
     
         100 . A substrate processing apparatus according to  claim 98 , wherein temperature control means is provided on said substrate mounting stage, and said temperature control means comprises a heater.  
     
     
         101 . A substrate processing apparatus according to  claim 100 , wherein the heater is arranged in the interior of the matrix, and when assuming the matrix to have a linear expansion coefficient α 1 [unit: 10 −6 /K], the material composing the heater has a linear expansion coefficient α H [unit: 10 −6 /K] satisfying (α 1 −3)≦α H ≦(α 1 +3).  
     
     
         102 . A substrate processing apparatus according to  claim 100 , wherein said temperature control means further comprises a piping for the flow of a temperature controlling part medium, arranged in the interior of the matrix; and 
 wherein, when assuming the matrix to have a linear expansion coefficient α 1 [unit: 10 −6 /K], the piping has a linear expansion coefficient α p [unit: 10 −6 /K] satisfying (α 1 −3)≦α p ≦(α 1 +3).    
     
     
         103 . A substrate processing apparatus according to  claim 97 , wherein said substrate processing apparatus applies plasma etching, or plasma CVD to the substrate; and 
 wherein a part of said processing apparatus composed of the composite material is formed by side wall and/or ceiling plate of the substrate processing apparatus.    
     
     
         104 . A substrate processing apparatus according to  claim 103 , wherein heaters are provided on the side walls and/or the ceiling plate of the substrate processing apparatus.  
     
     
         105 . A substrate processing apparatus according to  claim 104 , wherein, when assuming the matrix to have a linear expansion coefficient α 1 [unit: 10 −6 /K], the material composing the heater has a linear expansion coefficient α H [unit: 10 −6 /K] satisfying (α 1 −3)≦α H ≦(α 1 +3).  
     
     
         106 . A substrate processing apparatus according to  claim 97 , wherein said substrate processing apparatus applies plasma etching to the substrate; and 
 wherein a part of said substrate processing apparatus composed of the composite material comprises a parallel flat upper opposite electrode.    
     
     
         107 . A substrate processing apparatus according to  claim 106 , wherein a heater is provided on said upper opposite electrode.  
     
     
         108 . A substrate processing apparatus according to  claim 107 , wherein the heater is arranged in the interior of the matrix; and 
 wherein, when assuming the matrix to have a linear expansion coefficient α 1 [unit: 10 −6 /K], the material composing the heater have a linear expansion coefficient α H [unit: 10 −6 /K] satisfying (α 1 −3)≦α H ≦(α 1 +3).    
     
     
         109 . A substrate processing apparatus according to  claim 97 , wherein, when assuming the matrix to have a linear expansion coefficient α 1 [unit: 10 −6 /K], the ceramics layer has a linear expansion coefficient α 2 [unit: 10 −6 /K], satisfying (α 1 −3)≦α 2 ≦(α 1 +3).  
     
     
         110 . A substrate processing apparatus according to  claim 109 , wherein the ceramics member composing the matrix comprises cordierite ceramics; the aluminum-based material composing the matrix comprises aluminum and silicon; and the ceramics layer comprises Al 2 O 3 .  
     
     
         111 . A substrate processing apparatus according to  claim 109 , wherein said ceramics member composing the matrix comprises aluminum nitride; said aluminum-based material composing the matrix comprises aluminum or aluminum and silicon; and the material of said ceramics layer comprises Al 2 O 3  or aluminum nitride.  
     
     
         112 . A substrate processing apparatus according to  claim 109 , wherein said ceramics member composing the matrix comprises silicon carbide; said aluminum-based material composing the matrix comprises aluminum or aluminum and silicon; said ceramics layer comprises Al 2 O 3  or aluminum nitride.  
     
     
         113 . A substrate processing apparatus according to  claim 109 , wherein said ceramics layer is formed on the surface of said matrix by the flame spraying method.  
     
     
         114 . A substrate processing apparatus according to  claim 109 , wherein said ceramics layer is attached to the surface of said matrix by brazing.  
     
     
         115 . A method for preparing a substrate processing apparatus for processing a substrate, wherein: 
 apart of the substrate processing apparatus comprises a matrix comprising a ceramics member, having a texture filled with an aluminum-based material and a composite material comprising a ceramics layer provided on the surface of said matrix; and    wherein said composite material is prepared by a process comprising: 
 (A) a step of filling the texture of the ceramics member with n aluminum-based material, thereby preparing a matrix comprising said ceramics member having a texture filled with said aluminum-based material; and  
 (B) a step of providing a ceramics layer on the surface of said matrix.  
   
     
     
         116 . A method for preparing a substrate processing apparatus according to  claim 115 , wherein said process (A) comprises the step of arranging the ceramics layer comprising process cordierite in a vessel; casting an aluminum-based material comprising molten aluminum and silicon; and filling the ceramics member with the aluminum-based material by the high-pressure casting method.  
     
     
         117 . A method for preparing a substrate processing apparatus according to  claim 115 , wherein the process (A) comprises the step of causing the aluminum-based material comprising molten aluminum or aluminum and silicon in a no-pressurized state to penetrate into the ceramics member formed from aluminum nitride particles in accordance with the non-pressurized metal penetrating method.  
     
     
         118 . A method for preparing a substrate processing apparatus according to  claim 115 , wherein the process (A) comprises the step of causing the aluminum-based material comprising molten aluminum or aluminum and silicon in a non-pressurized state to penetrate into the ceramics member formed from silicon carbide particles in accordance with the non-pressurized metal penetrating method.  
     
     
         119 . A method for preparing a substrate processing apparatus according to  claim 115 , wherein the process (A) comprises (A) comprises the step of arranging the ceramics member comprising silicon carbide in a vessel, casting the aluminum-based material comprising molten aluminum or aluminum and silicon into the vessel, and filling the ceramics member with the aluminum-based material by the high-pressure casting method.  
     
     
         120 . A method form preparing a substrate processing apparatus according to  claim 115 , wherein the ceramics layer comprises Al 2 O 3  or aluminum nitride; and 
 wherein the process (B) comprises the step of forming the ceramics layer on the surface of the matrix by the flame spraying method.    
     
     
         121 . A method for preparing a substrate processing apparatus according to  claim 115 , wherein the ceramics layer comprises Al 2 O 3  or aluminum nitride; and 
 wherein the (B) comprises the step of attaching the ceramics layer onto the surface of the matrix by brazing.    
     
     
         122 . A method for preparing a substrate processing apparatus according to  claim 115 , wherein, when assuming the matrix to have a linear expansion coefficient α 1 [unit: 10 −6 /K], the ceramics layer has a linear expansion coefficient α 2 [unit: 10 −6 /K] satisfying (α 1 −3)≦α 2 ≦(α 1 +3).  
     
     
         123 . A method for preparing a substrate processing apparatus according to  claim 115 , wherein said substrate processing apparatus applies plasma etching, plasma CVD or sputtering to the substrate; and 
 wherein a part of said substrate processing apparatus composed of a composite material is a substrate mounting stage having an electrostatic chucking function and temperature control means.    
     
     
         124 . A method for preparing a substrate processing apparatus to  claim 115 , wherein said substrate processing apparatus applies plasma etching or plasma CVD to the substrate; and 
 wherein a part of said substrate processing apparatus composed of the composite material is formed by side wall and/or a ceiling plate of the substrate processing apparatus.    
     
     
         125 . A method for preparing a substrate processing apparatus according to  claim 115 , wherein said substrate processing apparatus applies plasma etching to the substrate; and 
 wherein a part of said substrate processing apparatus composed of the composite material comprises a parallel flat upper opposite electrodes arranged in the substrate processing apparatus.    
     
     
         126 . A substrate mounting stage having an composing the matrix comprises aluminum or aluminum and silicon; and the material of said ceramics layer comprises Al 2 O 3  or aluminum nitride.  
     
     
         134 . A substrate mounting stage according to  claim 131 , wherein said ceramics member composing the matrix comprises silicon carbide; said aluminum-based material composing the matrix comprises aluminum or aluminum and silicon; and said ceramics Al 2 O 3  or aluminum nitride.  
     
     
         135 . A substrate mounting stage according to  claim 126 , wherein said ceramics layer is formed on the surface of said matrix by the flame spraying method.  
     
     
         136 . A substrate mounting stage according to  claim 126 , wherein said ceramics layer is attached to the surface of said matrix by brazing.  
     
     
         137 . A method for manufacturing a substrate mounting stage having an electrostatic chucking function and provided with temperature control means, wherein said substrate mounting stage comprises a composite material composed of a matrix comprising a ceramics member having a texture filled with and aluminum-based material and a ceramics layer provided on the surface of said matrix; and  
     
     
         140 . A method for manufacturing a substrate mounting stage according to  claim 137 , wherein the process (A) comprises the step of causing the aluminum-based material comprising molten aluminum or aluminum and silicon in a non-pressurized state to penetrate into the ceramics member formed from silicon carbide particles in accordance with the non-pressurized metal penetrating method.  
     
     
         141 . A method for manufacturing a substrate mounting stage according to  claim 137 , wherein the process (A) comprises the steps of arranging the ceramics member comprising silicon carbide in a vessel, casting the aluminum-based material comprising molten aluminum or aluminum and silicon into the vessel, and filling the ceramics member with the aluminum-based material by the high-pressure casting method.  
     
     
         142 . a method for manufacturing a substrate mounting stage according to  claim 137 , wherein the ceramics layer comprises Al 2 O 3  or aluminum nitride; and 
 wherein the process (B) comprises the step of forming the ceramics layer on the surface of the matrix by the flame spraying method.    
     
     
         143 . A method for manufacturing a substrate mounting stage according to  claim 137 , wherein the ceramics layer comprises Al 2 O 3  or aluminum nitride; and 
 wherein the process (B) comprises the step of attaching the ceramics layer onto the surface of the matrix by brazing.    
     
     
         144 . A method for manufacturing a substrate mounting stage according to  claim 137 , wherein, when assuming the matrix to have a linear expansion coefficient α 1 [unit:10 −6 /K], the ceramics layer has a linear expansion coefficient α 2 [unit:10 −6 /K] satisfying (α 1 −3)≦α 2 ≦(α 1 +3).  
     
     
         145 . A substrate processing method using a substrate processing apparatus for processing a substrate, wherein: 
 said substrate processing apparatus is provided with a substrate mounting stage;    wherein said substrate mounting stage is prepared from a composite material comprising a matrix made of a ceramics member having a texture filled with an aluminum-based material and a ceramics layer provided on the surface of said matrix, has an electrostatic chucking function and is provided with temperature control means; and    wherein the substrate is processed by fixing the substrate on said substrate mounting stage by the electrostatic chucking function in a state in which temperature of the substrate mounting stage is controlled by the temperature control means.    
     
     
         146 . A substrate processing method according to  claim 145 , wherein processing of the substrate is accomplished by plasma etching.  
     
     
         147 . A substrate processing method according to  claim 145 , wherein processing of the substrate is accomplished by plasma CVD.  
     
     
         148 . A substrate processing method according to  claim 145 , wherein processing of the substrate is accomplished by sputtering.  
     
     
         149 . A substrate processing method according to  claim 148 , wherein sputtering includes soft etching of the substrate.  
     
     
         150 . A substrate processing method according to  claim 145 , wherein temperature control means is provided on the substrate mounting stage, and said temperature control means comprises a heater.  
     
     
         151 . A substrate processing method according to  claim 150 , wherein said heater is arranged in the interior of the matrix.  
     
     
         152 . A substrate processing method according to  claim 150 , wherein said temperature control means further comprises a piping for the flow a temperature controlling heat medium.  
     
     
         153 . A substrate processing method using a substrate processing apparatus for processing a substrate of which side walls and/or a ceiling plate are prepared from a composite material comprising a matrix made of a ceramics member, the texture of which is filled with an aluminum-based material and a ceramics layer provided on the surface of said matrix, which comprises the steps of: 
 housing the substrate into said substrate processing apparatus and applying plasma etching or plasma CVD.    
     
     
         154 . A substrate processing method according to  claim 153 , wherein temperature control means is provided for each of the side wall and/or the ceiling plate, and said temperature control means comprises a heater.  
     
     
         155 . A substrate processing method according to claim  154 , wherein the plate is provided in the interior of the matrix.  
     
     
         156 . A substrate processing method using a substrate processing apparatus for processing a substrate, wherein: 
 said substrate processing apparatus has a substrate mounting stage serving also as a lower electrode and upper opposite electrode;    wherein said upper opposite electrode is prepared from a composite material comprising the matrix made of a ceramics member having a texture filled with an aluminum-based material and a ceramics layer provided on the surface of said matrix; and    wherein plasma etching is allied to the substrate in a state in which the substrate is mounted on said substrate mounting stage.    
     
     
         157 . A substrate processing method according to  claim 156 , wherein a temperature control means is provided on the upper opposite electrode, and said temperature control means comprises a heater.  
     
     
         158 . A substrate processing method according to  claim 157 , wherein the heater is provided in the interior of the matrix.