US2002083863A1PendingUtilityA1
Metal complex solution, photosensitive metal complex solution and method for forming metallic oxide films
Est. expiryOct 14, 2016(expired)· nominal 20-yr term from priority
Inventors:Satoshi Mitamura
H10F 71/138C04B 35/6264C04B 2235/3293C04B 2235/449C03C 2217/24C04B 35/472C03C 2217/948C04B 35/2658C03C 17/27G02F 1/13439C04B 2235/3272C03C 2217/212H01F 41/24C03C 2217/217G03F 7/0047C03C 2217/231C04B 2235/96C04B 2235/441C04B 2235/3296C04B 35/457C04B 2235/3232C04B 2235/9653C04B 2235/3284C04B 2235/3286Y02E10/50C04B 2235/768H10K 50/81
40
PatentIndex Score
0
Cited by
0
References
0
Claims
Abstract
A metal complex solution comprising an organic solvent, and a complex composed of an organic acid salt of at least one metal and an organic amine or organic ketone compound, dissolved in the organic solvent; a photosensitive metal complex solution comprising the metal complex solution, and a photosensitive resin added to the solution; and a method for forming metallic oxide films, using these solutions.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A metal complex solution comprising an organic solvent, and a complex composed of an organic acid salt of at least one metal and an organic amine or organic ketone compound, dissolved in the organic solvent.
2 . The metal complex solution according to claim 1 , wherein the metal is In.
3 . The metal complex solution according to claim 2 , wherein the organic acid salt of In is a reaction product between an In oxide and a lower aliphatic carboxylic acid.
4 . The metal complex solution according to claim 1 , wherein the organic amine is a lower aliphatic amine.
5 . The metal complex solution according to claim 1 , wherein the organic ketone compound is a β-diketone compound.
6 . The metal complex solution according to claim 1 , further comprising a metal alkoxide.
7 . The metal complex solution according to claim 6 , wherein the metal of the metal adkoxide is Sn.
8 . The metal complex solution according to claim 7 , wherein the Sn alkoxide is a lower alkoxide of Sn.
9 . The metal complex solution according to claim 7 , wherein the complex composed of the organic acid salt of In and the organic amine or organic ketone compound, and the Sn alkoxide are in an atomic ratio In: Sn of 10:0.5-1.5.
10 . A method for forming a metallic oxide film, comprising the steps of coating the metal complex solution according to any of claims 1 to 9 onto a heat-resistant substrate, drying the coating to form a film, and heating the film to obtain a metallic oxide film.
11 . The method for forming a metallic oxide film according to claim 10 , further comprising the step of irradiating the metallic oxide film obtained by the heat treatment with light with a wavelength of 400 nm or shorter.
12 . A photosensitive metal complex solution comprising the metal complex solution according to any of claims 1 to 9 , and a photosensitive resin added to the solution.
13 . The photosensitive metal complex solution according to claim 12 , wherein the amount of the photosensitive resin added is from 140 to 900 parts by weight for 100 parts by weight of solid matter calculated in terms of the oxides in the metal complex solution.
14 . The photosensitive metal complex solution according to claim 12 , wherein the photosensitive resin is a positive or negative ultraviolet-light-sensitive resin.
15 . A method for forming a patterned metallic oxide film, comprising the steps of coating the photosensitive metal complex solution according to any of claims 12 to 14 onto a heat-resistant substrate, drying the coating to form a film, subjecting the film to pattern-wise exposure, and developing the exposed film.
16 . The method for forming patterned transparent conducting film according to claim 15 , further comprising the step of irradiating the patterned metallic oxide film with light with a wavelength of 400 nm or shorter.Join the waitlist — get patent alerts
Track US2002083863A1 — get alerts on status changes and closely related new filings.
We store only your email — no account needed. See our privacy policy.