US2002085954A1PendingUtilityA1
Inorganic permeation layer for micro-electric device
Est. expiryNov 1, 2013(expired)· nominal 20-yr term from priority
H10W 90/00H10W 72/0198B01J 2219/00621B01J 2219/00686B01L 2400/0415B01J 2219/00644B01J 2219/00853B01L 2300/0645B01L 2300/069B01J 2219/00713B01J 2219/00731B01J 2219/00637B01J 2219/00585B01J 2219/00653B01J 2219/00605B82Y 5/00B01J 2219/00626C40B 60/14C12Q 1/6825C07K 1/04C07K 1/047B01J 2219/00725B01J 2219/0061G11C 13/04B01J 19/0046B01J 2219/00527C07B 2200/11B01L 2300/0636C40B 40/10B01L 3/50273C07K 1/045B01J 2219/00641B01J 2219/0059B01J 2219/00722B01L 3/5085B01J 2219/00315G11C 13/0019B01J 2219/00596B01J 2219/00317B01J 2219/00612C40B 40/06G11C 13/0014B01J 2219/0063B01L 3/508B01L 2200/0647B01J 19/0093B01J 2219/0072B01J 2219/00659C40B 40/12G11C 19/00C12Q 1/6837B01L 3/502707C07K 1/24B82Y 10/00C07H 21/00B01L 2400/0421B01L 3/502761B01J 2219/00689H10K 10/701
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Claims
Abstract
The present invention pertains to a method of, and a device created by, depositing an inorganic permeation layer on a micro-electronic device for molecular biological reactions. The permeation layer is preferably sol-gel. The sol-gel permeation layer can be created with pre-defined porosity, pore size distribution, pore morphology, and surface area. The sol-gel permeation layer may also function as the attachment layer of the micro-electric device.
Claims
exact text as granted — not AI-modifiedWe claim:
1 . An electronic device adapted to received a solution comprising:
a substrate; a plurality of selectively addressable electrodes on the substrate; and a permeation layer adjacent the electrodes, the permeation layer being a sol-gel composition; and an electric source for selectively addressing the electrodes.
2 . The electronic device of claim 1 wherein the sol-gel composition is comprised of silicon dioxide.
3 . The electronic device of claim 2 wherein the silicon dioxide sol-gel composition is formed from tetraethyl orthosilicate, ethanol, de-ionized water, hydrochloric acid and a surfactant.
4 . The electronic device of claim 3 wherein the surfactant is cetyltrimethylammonium bromide.
5 . The electronic device of claim 3 wherein the concentration of the surfactant is selected from 1 weight percent to 5 weight percent to generate a predetermined pore size in the sol-gel.
6 . The electronic device of claim 1 further comprising:
an attachment layer adjacent the permeation layer and having selective binding properties for specific binding entities.
7 . The electronic device of claim 1 further comprising:
an attachment layer integral with the permeation layer and having selective binding properties for specific binding entities.
8 . An electronic device adapted to receive a solution comprising:
a substrate; a plurality of selectively addressable electrodes on the substrate; and a permeation layer adjacent the electrodes, the permeation layer being a silicon dioxide composition.
9 . The electronic device of claim 8 wherein the silicon dioxide composition is formed from tetraethyl orthosilicate, ethanol, de-ionized water, hydrochloric acid and a surfactant.
10 . The electronic device of claim 9 wherein the surfactant is cetyltrimethylammonium bromide.
11 . The electronic device of claim 9 wherein the concentration of the surfactant is selected from 1 weight percent to 5 weight percent to generate a predetermined pore size in the silicon dioxide composition.
12 . The electronic device of claim 8 further comprising:
an attachment layer adjacent the permeation layer with selective binding properties for specific binding entities.
13 . The electronic device of claim 8 further comprising:
an attachment layer integral with the permeation layer and having selective binding properties for specific binding entities.
14 . A method for forming an electronic device adapted to receive a solution comprising:
providing a substrate; locating a plurality of selectively addressable electrodes on the substrate; and forming a permeation layer adjacent the electrodes, the permeation layer being a sol-gel composition.
15 . The method of claim 14 wherein the sol-gel composition is comprised of silicon dioxide.
16 . The method of claim 15 wherein the silicon dioxide sol-gel composition is formed from tetraethyl orthosilicate, ethanol, de-ionized water, hydrochloric acid and a surfactant.
17 . The method of claim 16 wherein the surfactant is cetyltrimethylammonium bromide.
18 . The method of claim 16 wherein the concentration of the surfactant is selected from 1 weight percent to 5 weight percent to generate a predetermined pore size in the sol-gel.
19 . The method of claim 14 further comprising:
forming an attachment layer adjacent the permeation layer with selective binding properties for specific binding entities.
20 . A method of forming a permeation layer for use on an electronic device comprising:
mixing tetraethylorthosilicate, an alcohol, water and an acid to form a stock solution; mixing the stock solution with additional water and additional acid; adding additional alcohol; adding a surfactant to form a sol-gel solution; depositing the sol-gel solution on a substrate; spinning the substrate; and heating the substrate.
21 . The method of claim 20 wherein the surfactant is cetyltrimethylammonium bromide, the acid is hydrochloric acid and the alcohol is ethanol.
22 . The method of claim 21 wherein the final molar ratio is tetraethylorthosilicate=about 1.0, water=about 0.0 to about 40.0, ethanol=about 0.0 to about 40.0 and hydrochloric acid=about 0.0001 to about 0.1.
23 . The method of claim 20 wherein the weight percent of the surfactant is from 1 weight percent to 5 weight percent.
24 . The method of claim 20 wherein the amount of surfactant is varied to vary the pore size in the permeation layer.Join the waitlist — get patent alerts
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