Apparatus for automatically cleaning mask

Abstract

An apparatus for automatically cleaning a mask applied to a mask cleaning step after an evaporation process. An RF plasma is used to clean the mask. By isolating the RF plasma generator, the wafer table and the mask table from the grounded reaction chamber, the RF voltage is supplied to the wafer table and the mask table. The bias generated by the RF voltage during evaporation process can thus be reduced to enhance the efficiency of evaporation. After removing the wafer being performed with the evaporation process, the RF plasma can be used to clean the mask. The mask can thus be fixed on the mask table without being removed or renewing the mask table.

What is claimed is:  
     
         1 . An apparatus for automatically cleaning a mask in an evaporation system, the apparatus comprises: 
 a vacuum chamber, connected with an external vacuum system, the vacuum chamber comprising a crucible at a bottom portion therein;    an RF power supplier, connected to a rotating table at an upper portion inside the vacuum chamber, the RF power supplier being insulated from the vacuum chamber;    a mask positioning apparatus, insulated from the vacuum chamber and further comprising a mask table and a wafer table, the mask table being connected to the rotating table;    a gas inlet, on a sidewall of the vacuum chamber; and    at least a magnet, located on top of the vacuum chamber to attract the mask carried by the mask table to be floated on a wafer carried by the wafer table.    
     
     
         2 . The apparatus according to  claim 1 , wherein an evaporation source is carried within the crucible.  
     
     
         3 . The apparatus according to  claim 1 , wherein the RF power supply comprises an AC current supply.  
     
     
         4 . The method according to  claim 1 , wherein the step of forming the super-resolution near field structure further comprises forming the second dielectric layer with the material selecting from a group consisting of zinc sulfur (ZnS), silicon nitride (SiN x ), gallium nitride (GaN x ), aluminum nitride (AlN x ) and titanium nitride (TiN x ).  
     
     
         5 . The method according to  claim 1 , wherein the step of forming the super-resolution near field structure further comprises forming the active layer with the material selecting from a group consisting of gallium oxide (GaO x ), germanium (GeO x ), arsenic oxide (AsO x ), selenium oxide (SeO x ), indium oxide (InO x ), tin oxide (SnO x ), antimony oxide (SbO x ), tellurium oxide (TeO x ) and silver oxide (AgO x ).  
     
     
         6 . The method according to  claim 5 , wherein the step of forming the super-resolution near field structure further comprises forming the first dielectric layer with the material selecting from a group consisting of zinc sulfur (ZnS), silicon oxide (SiO x ), gallium oxide (GaO x ), aluminum oxide (AlO x ) and titanium oxide (TiO x ).  
     
     
         7 . The method according to  claim 5 , wherein the step of forming the super-resolution near field structure further comprises forming the second dielectric layer with the material selecting from a group consisting of zinc sulfur (ZnS), silicon oxide (SiO x ), gallium oxide (GaO x ), aluminum oxide (AlO x ) and titanium oxide (TiO x ).  
     
     
         8 . The method according to  claim 1 , wherein the step of forming the super-resolution near-field structure further comprises forming the super-resolution near-field structure with a distance to the photoresist layer less than the wavelength of the  
     
     
         9 . The method according to  claim 1 , wherein the step of shining the semiconductor chip with a light beam further comprises a step of shining the semiconductor chip with the light beam having a wavelength of about 365 nanometer.  
     
     
         10 . The method according to  claim 1 , wherein the step of forming the super-resolution near-field structure further comprising forming the super resolution near-field structure comprising the active layer with a thickness of about 15 nanometer, the first dielectric layer with a thickness of about 20 nanometer, and the second dielectric layer with a thickness of about 170 nanometer.  
     
     
         11 . The method according to  claim 1 , comprising further a step of removing the super-resolution near-field structure.  
     
     
         12 . A method of photolithography using a super-resolution near-field structure applied to a semiconductor chip comprising a substrate and a photoresist layer on the substrate, the method comprising: 
 disposing a plate comprising the super-resolution near-field structure over the photoresist layer, the super-resolution near-field structure further comprising a first and a second dielectric layers and an active layer between the first and the second dielectric layers; and    providing a light beam penetrating through the super-resolution near-field structure to expose the photoresist layer; wherein    the light intensity of light beam is increased and the aperture of the light beam is reduced after penetrating through the super-resolution near-field structure.    
     
     
         13 . The method according to  claim 12 , wherein the step of forming the super-resolution near field structure further comprises forming the active layer with the material selecting from a group consisting of gallium, germanium, arsenic, selenium, indium, tin, antimony, tellurium and silver.  
     
     
         14 . The method according to  claim 12 , wherein the step of forming the super-resolution near field structure further comprises forming the first dielectric layer with the material selecting from a group consisting of zinc sulfur (ZnS), silicon nitride (SiN x ), gallium nitride (GaN x ), aluminum nitride (AlN x ) and titanium nitride (TiN x ).  
     
     
         15 . The method according to  claim 12 , wherein the step of forming the super-resolution near field structure further comprises forming the second dielectric layer with the material selecting from a group consisting of zinc sulfur (ZnS), silicon nitride (SiN x ), gallium nitride (GaN x ), aluminum nitride (AlN x ) and titanium nitride (TiN x ).  
     
     
         16 . The method according to  claim 12 , wherein the step of forming the super-resolution near field structure further comprises forming the active layer with the material selecting from a group consisting of gallium oxide (GaO x ), germanium (GeO x ), arsenic oxide (AsO x ), selenium oxide (SeO x ), indium oxide (InO x ), tin oxide (SnO x ), antimony oxide (SbO x ), tellurium oxide (TeO x ) and silver oxide (AgO x ).  
     
     
         17 . The method according to  claim 16 , wherein the step of forming the super-resolution near field structure further comprises forming the first dielectric layer with the material selecting from a group consisting of zinc sulfur (ZnS), silicon oxide (SiO x ), gallium oxide (GaO x ), aluminum oxide (AlO x ) and titanium oxide (TiO x ).  
     
     
         18 . The method according to  claim 16 , wherein the step of forming the super-resolution near field structure further comprises forming the second dielectric layer with the material selecting from a group consisting of zinc sulfur (ZnS), silicon oxide (SiO x ), gallium oxide (GaO x ), aluminum oxide (AlO x ) and titanium oxide (TiO x ).  
     
     
         19 . The method according to  claim 12 , wherein the step of forming the super-resolution near-field structure further comprises forming the super-resolution near-field structure with a distance to the photoresist layer less than the wavelength of the  
     
     
         20 . The method according to  claim 12 , wherein the step of shining the semiconductor chip with a light beam further comprises a step of shining the semiconductor chip with the light beam having a wavelength of about 365 nanometer.  
     
     
         21 . The method according to  claim 12 , wherein the step of forming the super-resolution near-field structure further comprising forming the super resolution near-field structure comprising the active layer with a thickness of about 15 nanometer, the first dielectric layer with a thickness of about 20 nanometer, and the second dielectric layer with a thickness of about 170 nanometer.  
     
     
         22 . A method of photolithography, comprising: 
 providing a substrate comprising a photoresist layer thereon;    forming a super-resolution near-field structure over the photoresist layer, the super-resolution near-field structure is so designed that an incident light beam transmitting through has a reduced light intensity and a smaller aperture; and    performing an exposure on the photoresist layer by transmitting the incident light beam through the super-resolution near-field structure.