Optoelectronic material and device application, and method for manufacturing optoelectronic material

Abstract

An optoelectronic material, device applications, and methods for manufacturing the optoelectronic material are provided to make it possible to obtain stable characteristics without deterioration of luminescence over time in the atmosphere. The optoelectronic material is composed of a porous silicon the surface of which is nitrided to form a silicon nitride layer thereon. This allows a stable electroluminescence to be obtained, without oxidation of the surface of the porous silicon.

What is claimed is:  
     
         1 . An optoelectronic material comprising a porous silicon, the surface of said porous silicon being nitrided.  
     
     
         2 . An optoelectronic material comprising silicon ultrafine particles having particle diameters of 1-50 nm, the surfaces of said silicon ultrafine particles or the entirety thereof being nitrided.  
     
     
         3 . A light emitting device having: 
 an optoelectronic material layer including an optoelectronic material comprising a porous silicon, the surface of said porous silicon being nitrided; and    a pair of electrodes equipped on the top and bottom of said optoelectronic material layer.    
     
     
         4 . A light emitting device having: 
 an optoelectronic material layer including an optoelectronic material comprising silicon ultrafine particles having particle diameters of 1-50 nm, the surfaces of said silicon ultrafine particles or the entirety thereof being nitrided; and    a pair of electrodes equipped on the top and bottom of said optoelectronic material layer.    
     
     
         5 . An optoelectronic conversion device having: 
 an optoelectronic material layer including an optoelectronic material comprising a porous silicon, the surface of said porous silicon being nitrided; and    a pair of electrodes equipped on the top and bottom of said optoelectronic material layer,    said device having a photodetector function by detecting a change in internal resistance or photoelectromotive force due to the generation of carriers via light irradiation on said optoelectronic material layer.    
     
     
         6 . An optoelectronic conversion device having: 
 an optoelectronic material layer including an optoelectronic material comprising silicon ultrafine particles having particle diameters of 1-50 nm, the surfaces of said silicon ultrafine particles or the entirety thereof being nitrided; and    a pair of electrodes equipped on the top and bottom of said optoelectronic material layer,    said device having a photodetector function by detecting a change in internal resistance or photoelectromotive force due to the generation of carriers via light irradiation on said optoelectronic material layer.    
     
     
         7 . A method for manufacturing an optoelectronic material comprising the steps of; 
 forming a porous silicon by means of anodizing a single-crystal silicon; and    annealing the porous silicon in an ambient gas including at least nitrogen to nitride the surface of said porous silicon.    
     
     
         8 . A method for manufacturing an optoelectronic material comprising the step of annealing silicon ultrafine particles having particle diameters of 1-50 nm, in an ambient gas containing at least nitrogen, at a temperature of at least 900 degrees Celsius to nitride surfaces of said silicon ultrafine particles or the entirety thereof.  
     
     
         9 . A method for manufacturing an optoelectronic material comprising: 
 a target material placement step of placing a target material inside a reaction chamber;    a substrate placement step of placing a deposition substrate inside the reaction chamber; and    an ablation step of irradiating the target material placed during said target material placement step with laser light beam, to generate desorption and ejection of said target material; thereby the material desorped and ejected during said ablation step on the target being condensed and grown in the ambient gas, and the ultrafine particles obtained thereby being deposited on said deposition substrate to obtain the optoelectronic material composed of said ultrafine particles,    wherein an ambient gas is introduced into the reaction chamber at a constant pressure during said ablation step to nitride the surfaces of said ultrafine particles or the entirety thereof.    
     
     
         10 . A method for manufacturing an optoelectronic material comprising: 
 a target material placement step of placing a target material inside a reaction chamber;    a substrate placement step of placing a deposition substrate inside the reaction chamber; and    an ablation step of irradiating the target material placed during said target material placement step with laser light beam to generate desorption and ejection of said target material; thereby, the material desorped and ejected during said ablation step on the target being condensed and grown in the ambient gas, and the ultrafine particles obtained thereby being deposited on said deposition substrate to obtain the optoelectronic material composed of said ultrafine particles,    wherein the ultrafine particles to be obtained are composed of at least two elements, and using the target material with the same or nearly the same composition as said ultrafine particles, during said ablation step, inert gas is introduced into the reaction chamber at a constant pressure.    
     
     
         11 . The method for manufacturing an optoelectronic material according to  claim 10 , wherein the ultrafine particles to be obtained are nitrided silicon ultrafine particles, and Si x N y  is used as the target.  
     
     
         12 . The method for manufacturing an optoelectronic material according to any of claims  9  through  11 , further comprising a step of changing the pressure at which low-pressure gas is introduced to control the average particle diameter of said ultrafine particles.  
     
     
         13 . The optoelectronic material manufactured by the method for manufacturing an optoelectronic material according to any of claims  7  through  12 .