Film formation apparatus and film formation method

Abstract

There is provided a film formation apparatus for forming an organic compound film including a plurality of functional regions. A plurality of evaporation sources ( 203 a to 203 c ) are included in a film formation chamber ( 210 ), functional regions made of respective organic compounds are successively formed, and a mixed region can be further formed in an interface between the functional regions. Also, when means for applying energy to an organic compound molecule to be formed into a film in a molecular activation region ( 213 ) is provided in such a film formation chamber, a dense film can be formed.

What is claimed is:  
     
         1 . A film formation apparatus comprising: 
 first exhaust means:    second exhaust means;    a film formation chamber comprising a first evaporation source., a second evaporation source; and    means for simultaneously operating the first evaporation source and the second evaporation source.,    wherein a surface of an inner wall of the film formation chamber is electrolytic-polished, and    wherein the film formation chamber is connected with the first exhaust means and the second exhaust means.    
     
     
         2 . A film formation apparatus comprising: 
 first exhaust means;    second exhaust means;    a film formation chamber comprising a first evaporation source, a second evaporation source; and    means for operating the first evaporation source and the second evaporation source in succession,    wherein a surface of an inner wall of the film formation chamber is electrolytic-polished, and    wherein the film formation chamber is connected with the first exhaust means and the second exhaust means.    
     
     
         3 . A film formation apparatus comprising: 
 first exhaust means;    second exhaust means;    a film formation chamber comprising a first evaporation source, a second evaporation source; and    means for operating the first evaporation source and the second evaporation source in succession without time interruption,    wherein a surface of an inner wall of the film formation chamber is electrolytic-polished, and    wherein the film formation chamber is connected with the first exhaust means and the second exhaust means.    
     
     
         4 . A film formation apparatus according to  claim 1 , wherein the degree of vacuum to be reached in the film formation chamber is 10 −6  Pa or less.  
     
     
         5 . A film formation apparatus according to  claim 2 , wherein the degree of vacuum to be reached in the film formation chamber is 10 −6  Pa or less.  
     
     
         6 . A film formation apparatus according to  claim 3 , wherein the degree of vacuum to be reached in the film formation chamber is 10 −6  Pa or less.  
     
     
         7 . A film formation apparatus according to  claim 1 , wherein the first exhaust means is a cryopump and the second exhaust means is a dry pump.  
     
     
         8 . A film formation apparatus according to  claim 2 , wherein the first exhaust means is a cryopump and the second exhaust means is a dry pump.  
     
     
         9 . A film formation apparatus according to  claim 3 , wherein the first exhaust means is a cryopump and the second exhaust means is a dry pump.  
     
     
         10 . A film formation apparatus according to  claim 1 , wherein an average surface roughness of the surface of the inner wall is 5 nm or less.  
     
     
         11 . A film formation apparatus according to  claim 2 , wherein an average surface roughness of the surface of the inner wall is 5 nm or less.  
     
     
         12 . A film formation apparatus according to  claim 3 , wherein an average surface roughness of the surface of the inner wall is 5 nm or less.  
     
     
         13 . A film formation apparatus comprising: 
 first exhaust means;    second exhaust means;    a film formation chamber comprising first evaporation means comprising a first plurality of evaporation sources and second evaporation means comprising a second plurality of evaporation sources: and    means for simultaneously operating the first evaporation means and the second evaporation means,    wherein a surface of an inner wall of the film formation chamber is electrolytic-polished, and    wherein the film formation chamber is connected with the first exhaust means and the second exhaust means.    
     
     
         14 . A film formation apparatus comprising: 
 first exhaust means,    second exhaust means,    a film formation chamber comprising first evaporation means comprising a first plurality of evaporation sources and second evaporation means comprising a second plurality of evaporation sources; and    means for operating the first evaporation means and the second evaporation means in succession,    wherein a surface of an inner wall of the film formation chamber is electrolytic-polished, and    wherein the film formation chamber is connected with the first exhaust means and the second exhaust means.    
     
     
         15 . A film formation apparatus comprising: 
 first exhaust means;    second exhaust means;    a film formation chamber comprising first evaporation means comprising a first plurality of evaporation sources and second evaporation means comprising a second plurality of evaporation sources; and    means for operating the first evaporation means and the second evaporation means in succession without time interruption,    wherein a surface of an inner wall of the film formation chamber is electrolytic-polished, and    wherein the film formation chamber is connected with the first exhaust means and the second exhaust means.    
     
     
         16 . A film formation apparatus according to  claim 1 , wherein the film formation chamber further includes a light source.  
     
     
         17 . A film formation apparatus according to  claim 2 , wherein the film formation chamber further includes a light source.  
     
     
         18 . A film formation apparatus according to  claim 3 , wherein the film formation chamber further includes a light source.  
     
     
         19 . A film formation apparatus according to  claim 13 , wherein the film formation chamber further includes a tight source.  
     
     
         20 . A film formation apparatus according to  claim 14 , wherein the film formation chamber further includes a light source.  
     
     
         21 . A film formation apparatus according to  claim 15 , wherein the film formation chamber further includes a light source.  
     
     
         22 . A film formation method in a film formation chamber, comprising the step of: 
 simultaneously operating first evaporation means and second evaporation means in the film formation chamber,    wherein the first evaporation means comprises a first plurality of evaporation sources and the second evaporation means comprises a second plurality of evaporation sources,    wherein a surface of an inner wall of the film formation chamber is electrolytic-polished, and    wherein the film formation chamber is connected with first exhaust means and second exhaust means.    
     
     
         23 . A film formation method in a film formation chamber, comprising the step of: 
 operating the first evaporation means and the second evaporation means in succession,    wherein the first evaporation means comprises a first plurality of evaporation sources and the second evaporation means comprises a second plurality of evaporation sources,    wherein a surface of an inner wall of the film formation chamber is electrolytic-polished, and    wherein the film formation chamber is connected with first exhaust means and second exhaust means.    
     
     
         24 . A film formation method in a film formation chamber, comprising the step of: 
 operating the first evaporation means and the second evaporation means in succession without time interruption,    wherein the first evaporation means comprises a first plurality of evaporation sources and the second evaporation means comprises a second plurality of evaporation sources,    wherein a surface of an inner wall of the film formation chamber is electrolytic-polished, and    wherein the film formation chamber is connected with first exhaust means and second exhaust means.    
     
     
         25 . A film formation method in a film formation chamber, comprising the step of: 
 simultaneously operating first evaporation means and second evaporation means in the film formation chamber,    wherein the first evaporation means comprises a first plurality of evaporation sources and the second evaporation means comprises a second plurality of evaporation sources.    wherein a surface of an inner wall of the film formation chamber is electrolytic-polished and an average surface roughness of the surface of the inner wall is 5 nm or less, and    wherein the film formation chamber is connected with a cryopump and a dry pump.    
     
     
         26 . A film formation method in a film formation chamber, comprising the step of: 
 operating the first evaporation means and the second evaporation means in succession,    wherein the first evaporation means comprises a first plurality of evaporation sources and the second evaporation means comprises a second plurality of evaporation sources.    wherein a surface of an inner wall of the film formation chamber is electrolytic-polished and an average surface roughness of the surface of the inner wall is 5 nm or less, and    wherein the film formation chamber is connected with a cryopump and a dry pump.    
     
     
         27 . A film formation method in a film formation chamber, comprising the step of: 
 A operating the first evaporation means and the second evaporation means in succession without time interruption,    wherein the first evaporation means comprises a first plurality of evaporation sources and the second evaporation means comprises a second plurality of evaporation sources,    wherein a surface of an inner wall of the film formation chamber is electrolytic-polished and an average surface roughness of the surface of the inner wall is 5 nm or less, and    wherein the film formation chamber is connected with a cryopump and a dry pump.    
     
     
         28 . A film formation method comprising the steps of: 
 vapor-depositing a plural kinds of organic compounds simultaneously and successively changing a concentration of each of the plural kinds of organic compounds to thereby form a first organic compound film in a first film formation chamber which includes a plurality of evaporation sources;    vapor-depositing a plural kinds of organic compounds simultaneously and successively changing a concentration of each of the plural kinds of organic compounds to thereby form a second organic compound film in a second film formation chamber which includes a plurality of evaporation sources; and    vapor-depositing a plural kinds of organic compounds simultaneously and successively changing a concentration of each of the plural kinds of organic compounds to thereby form a third organic compound film in a third film formation chamber which includes a plurality of evaporation sources,    wherein the first organic compound film, the second organic compound film, and the third organic compound film exhibit light emission of different colors.    
     
     
         29 . A film formation method comprising the steps of: 
 vapor-depositing a plural kinds of organic compounds simultaneously and successively changing a concentration of each of the plural kinds of organic compounds to thereby form a first organic compound film in a first film formation chamber which includes a plurality of evaporation sources;    vapor-depositing a plural kinds of organic compounds simultaneously and successively changing a concentration of each of the plural kinds of organic compounds to thereby form a second organic compound film in a second film formation chamber which includes a plurality of evaporation sources; and    vapor-depositing a plural kinds of organic compounds simultaneously and successively changing a concentration of each of the plural kinds of organic compounds to thereby form a third organic compound film in a third film formation chamber which includes a plurality of evaporation sources,    wherein the first organic compound film, the second organic compound film, and the third organic compound film exhibit light emission of different colors, and    wherein a surface of an inner wall of each of the first film formation chamber, the second film formation chamber, and the third film formation chamber is electrolytic-polished.    
     
     
         30 . A film formation method according to  claim 29 , wherein an average surface roughness of the surface of the inner wall in the first film formation chamber, the second film formation chamber, and the third film formation chamber is 5 nm or less.  
     
     
         31 . A film formation method according  claim 28 , wherein, in the same formation chamber, a first functional region comprising a first organic compound is formed and a second functional region comprising a second organic compound is formed.  
     
     
         32 . A film formation method according  claim 29 , wherein, in the same formation chamber, a first functional region comprising a first organic compound is formed and a second functional region comprising a second organic compound is formed.  
     
     
         33 . A film formation method according to  claim 31 , wherein a mixed region comprising the first organic compound and the second organic compound is formed in an interface between the first functional region and the second functional region.  
     
     
         34 . A film formation method according to  claim 32 , wherein a mixed region comprising the first organic compound and the second organic compound is formed in an interface between the first functional region and the second functional region.  
     
     
         35 . A film formation method according to  claim 31 , wherein each of the first organic compound and the second organic compound is an organic compound comprising one of a hole injection property, a hole transport property, an emitting property, a blocking property, an electron transport property, and an electron injection property and the first and second organic compounds are formed of different organic compounds.  
     
     
         36 . A film formation method according to  claim 32 , wherein each of the first organic compound and the second organic compound is an organic compound comprising one of a hole injection property, a hole transport property, an emitting property, a blocking property, an electron transport property, and an electron injection property, and the first and second organic compounds are formed of different organic compounds.  
     
     
         37 . A film formation method according to  claim 31 , wherein a second mixed region comprising the second organic compound and a third organic compound is formed in a part of the second functional region.  
     
     
         38 . A film formation method according to  claim 32 , wherein a second mixed region comprising the second organic compound and a third organic compound is formed in a part of the second functional region.  
     
     
         39 . A film formation method according to  claim 37 , wherein the third organic compound is an organic compound with a light emitting property: and the first, second, and third organic compounds are formed of different organic compounds.  
     
     
         40 . A film formation method according to  claim 38 , wherein the third organic compound is an organic compound with a light emitting property: and the first, second, and third organic compounds are formed of different organic compounds.  
     
     
         41 . A film formation method according to of  claim 31 , wherein the first functional region comprises an organic compound with a hole transport property, and the second functional region comprises an organic compound with an electron transport property.  
     
     
         42 . A film formation method according to of  claim 32 , wherein the first functional region comprises an organic compound with a hole transport property, and the second functional region comprises an organic compound with an electron transport property.  
     
     
         43 . A film formation method according to  claim 35 , wherein an aromatic diamine compound is used as the organic compound with the hole transport property.  
     
     
         44 . A film formation method according to  claim 36 , wherein an aromatic diamine compound is used as the organic compound with the hole transport property.  
     
     
         45 . A film formation method according to  claim 35 , wherein one of a metallic complex including quinoline skeleton, a metallic complex including benzoquinoline skeleton, an oxadiazole derivative, a triazole derivative, and a phenanthroline derivative is used as the organic compound with the electron transport property.  
     
     
         46 . A film formation method according to  claim 36 , wherein one of a metallic complex including quinoline skeleton, a metallic complex including benzoquinoline skeleton, an oxadiazole derivative, a triazole derivative, and a phenanthroline derivative is used as the organic compound with the electron transport property.  
     
     
         47 . A film formation method according to  claim 35 , wherein a metallic complex including quinoline skeleton, a metallic complex including benzoxazole skeleton, or a metallic complex including benzothiazole skeleton is used as the organic compound with the tight emitting property.  
     
     
         48 . A film formation method according to  claim 36 , wherein a metallic complex including quinoline skeleton, a metallic complex including benzoxazole skeleton, or a metallic complex including benzothiazole skeleton is used as the organic compound with the light emitting property.