US2003049937A1PendingUtilityA1

Apparatus and method for surface treatment to substrate

41
Assignee: SUZUKI NAOKIPriority: Sep 5, 2001Filed: Sep 4, 2002Published: Mar 13, 2003
Est. expirySep 5, 2021(expired)· nominal 20-yr term from priority
H01J 37/32935H05K 3/323H05K 3/26H01J 37/3299H05K 2203/095H01J 37/32009
41
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Claims

Abstract

The present invention provides an apparatus and a method for surface treatment to substrates whereby the quality of substrates can be maintained by preventing an excessive plasma treatment to substrates. In carrying out the plasma treatment to a surface of the substrate in a reaction chamber, there are provided an emission spectroscopic analysis device or a mass analyzer, and a controller, so that an energy of ions in plasma is controlled to decrease when, e.g., bromine included in the substrate is detected, and the surface treatment to the substrate is controlled to stop when removing impurities of the substrate is detected to end. The bromine once separated from the substrate is prevented from adhering again to the substrate to corrode the substrate. Moreover, ions are prevented from being excessively irradiated to the substrate when the removal of impurities ends, thereby reducing damages to the substrate. The substrate quality is maintained accordingly.

Claims

exact text as granted — not AI-modified
What is claimed is:  
     
         1 . A substrate surface treatment apparatus for executing surface treatment to a substrate arranged in a reaction chamber by ions in plasma generated in the reaction chamber, which comprises: 
 a detecting device arranged to the reaction chamber for detecting at least either whether or not components constituting the substrate are separated from the substrate, or whether or not impurities adhering to a surface of the substrate are removed by the surface treatment; and    a controller connected to the detecting device for controlling to reduce an energy of the ions in the plasma on a basis of the detected information by the detecting device when the separation of components is brought about, and for controlling to terminate the surface treatment on a basis of the detected information by the detecting device when the removal of impurities ends.    
     
     
         2 . The substrate surface treatment apparatus according to  claim 1 , further comprising 
 a plasma generating device including electrodes arranged in the reaction chamber for generating the plasma and a power supply unit for supplying electricity to the electrodes, and    a vacuum degree adjusting device connected to the reaction chamber for adjusting a degree of vacuum in the reaction chamber,    wherein the controller controls operations of the power supply unit and the vacuum degree adjusting device on the basis of the detected information by the detecting device so as to control to reduce the energy of the ions and to end the surface treatment.    
     
     
         3 . The substrate surface treatment apparatus according to  claim 1 , wherein the detecting device is comprised of a spectroscopic analyzer for conducting spectral observation of light generated by the plasma and detecting the components and the impurities of the substrate on a basis of the observation.  
     
     
         4 . The substrate surface treatment apparatus according to  claim 2 , wherein the detecting device is comprised of a spectroscopic analyzer for conducting spectral observation of light generated by the plasma and detecting the components and the impurities of the substrate on a basis of the observation.  
     
     
         5 . The substrate surface treatment apparatus according to  claim 1 , wherein the detecting device is comprised of a mass analyzer for analyzing gas elements in the reaction chamber and detecting the components and the impurities of the substrate on a basis of the gas analysis.  
     
     
         6 . The substrate surface treatment apparatus according to  claim 2 , wherein the detecting device is comprised of a mass analyzer for analyzing gas elements in the reaction chamber and detecting the components and the impurities of the substrate on a basis of the gas analysis.  
     
     
         7 . The substrate surface treatment apparatus according to  claim 1 , wherein the components of the substrate to be detected by the detecting device is bromine.  
     
     
         8 . The substrate surface treatment apparatus according to  claim 2 , wherein the components of the substrate to be detected by the detecting device is bromine.  
     
     
         9 . The substrate surface treatment apparatus according to  claim 3 , wherein the components of the substrate to be detected by the detecting device is bromine.  
     
     
         10 . The substrate surface treatment apparatus according to  claim 5 , wherein the components of the substrate to be detected by the detecting device is bromine.  
     
     
         11 . The substrate surface treatment apparatus according to  claim 1 , wherein the impurities to be detected by the detecting device is chlorine.  
     
     
         12 . The substrate surface treatment apparatus according to  claim 2 , wherein the impurities to be detected by the detecting device is chlorine.  
     
     
         13 . The substrate surface treatment apparatus according to  claim 3 , wherein the impurities to be detected by the detecting device is chlorine.  
     
     
         14 . The substrate surface treatment apparatus according to  claim 5 , wherein the impurities to be detected by the detecting device is chlorine.  
     
     
         15 . A substrate surface treatment method for executing surface treatment to a substrate arranged in a reaction chamber by ions in plasma generated in the reaction chamber, which comprises: 
 detecting at least either whether or not components constituting the substrate are separated from the substrate by the surface treatment, or whether or not impurities adhering to a surface of the substrate are removed by the surface treatment; and    controlling on a basis of the detected information an energy of the ions in the plasma to reduce when the separation of components is detected to take place and the surface treatment to end when the removal of impurities is detected to end.

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