Composite integrated semiconductor device

Abstract

A composite integrated semiconductor device. In one embodiment, an input surge/noise absorbing circuit absorbs surge from an input signal, an attenuating/level-shifting circuit attenuates or level-shifts the input signal, and an electrical signal converting circuit converts the input signal to an output signal. The input surge/noise absorbing circuit, the attenuating or level-shifting circuit, and the electrical signal converting circuit together form a unit, and a plurality of these units are arranged in parallel in one semiconductor substrate to form the composite integrated semiconductor device, resulting in a reduction in the number of discrete components mounted on a printed circuit board.

What is claimed is:  
     
         1 . A composite integrated semiconductor device, comprising: 
 inputting means for inputting an input electrical signal;    outputting means for outputting an output electrical signal;    input surge/noise absorbing means for absorbing surge or noise of the input electrical signal, and being connected between the inputting means and the outputting means; and    a plurality of semiconductor components forming the input surge/noise absorbing means and being integrated in a semiconductor substrate.    
     
     
         2 . The composite integrated semiconductor device as claimed in  claim 1 , wherein the input surge/noise absorbing means is able to withstand an electrostatic discharge capability of approximately ±0.5 kV to 15 kV at approximately 150 pF and 500Ω.  
     
     
         3 . The composite integrated semiconductor device as claimed in  claim 1 , wherein the input surge/noise absorbing means is able to withstand an electrostatic discharge capability of approximately ±1000V at approximately 100 pF and 1500Ω.  
     
     
         4 . The composite integrated semiconductor device as claimed in  claim 1 , wherein the input surge/noise absorbing means is able to withstand an electromagnetic compatibility capability of approximately 20 to 100 V/m at approximately 10 kHz to 200 MHz.  
     
     
         5 . The composite integrated semiconductor device as claimed in  claim 1 , wherein the outputting means is positioned at an angle of about 90° or more with respect to a position of the inputting means.  
     
     
         6 . A composite integrated semiconductor device, comprising: 
 inputting means for inputting an input electrical signal;    outputting means for outputting an output electrical signal;    attenuating/level-shifting means for attenuating or level-shifting the input electrical signal, and being connected between the inputting means and the outputting means; and    a plurality of semiconductor components forming the attenuating/level-shifting means and being integrated in a semiconductor substrate.    
     
     
         7 . The composite integrated semiconductor device as claimed in  claim 6 , wherein the outputting means is positioned at an angle of about 90° or more with respect to a position of the inputting means.  
     
     
         8 . A composite integrated semiconductor device, comprising: 
 inputting means for inputting an input electrical signal;    outputting means for outputting an output electrical signal;    electrical signal converting means for converting the input electrical signal to the output electrical signal, and being connected between the inputting means and the outputting means; and    a plurality of semiconductor components forming the electrical signal converting means and being integrated in a semiconductor substrate.    
     
     
         9 . The composite integrated semiconductor device as claimed in  claim 8 , wherein the outputting means is positioned at an angle of about  90 ° or more with respect to a position of the inputting means.  
     
     
         10 . A composite integrated semiconductor device, comprising: 
 inputting means for inputting an input electrical signal;    outputting means for outputting an output electrical signal;    input surge/noise absorbing means for absorbing surge or noise of the input electrical signal, and being connected between the inputting means and the outputting means;    attenuating/level-shifting means for attenuating or level-shifting the input electrical signal, and being connected between the inputting means and the outputting means; and    a plurality of semiconductor components forming the input surge/noise absorbing means and the attenuating/level-shifting means, and being integrated in a semiconductor substrate.    
     
     
         11 . The composite integrated semiconductor device as claimed in  claim 10 , wherein the input surge/noise absorbing means is able to withstand an electrostatic discharge capability of approximately ±0.5 kV to 15 kV at approximately 150 pF and 500Ω.  
     
     
         12 . The composite integrated semiconductor device as claimed in  claim 10 , wherein the input surge/noise absorbing means is able to withstand an electrostatic discharge capability of approximately ±1000V at approximately 100 pF and 1500Ω.  
     
     
         13 . The composite integrated semiconductor device as claimed in  claim 10 , wherein the input surge/noise absorbing means is able to withstand an electromagnetic compatibility capability of approximately 20 to 100 V/m at approximately 10 kHz to 200 MHz.  
     
     
         14 . The composite integrated semiconductor device as claimed in  claim 10 , wherein the outputting means is positioned at an angle of about 90° or more with respect to a position of the inputting means.  
     
     
         15 . A composite integrated semiconductor device, comprising: 
 inputting means for inputting an input electrical signal;    outputting means for outputting an output electrical signal;    input surge/noise absorbing means for absorbing surge or noise of the input electrical signal, and being connected between the inputting means and the outputting means;    electrical signal converting means for converting the input electrical signal to the output electrical signal, and being connected between the inputting means and the outputting means; and    a plurality of semiconductor components forming the input surge/noise absorbing means and the electrical signal converting means, and being integrated in a semiconductor substrate.    
     
     
         16 . The composite integrated semiconductor device as claimed in  claim 15 , wherein the input surge/noise absorbing means is able to withstand an electrostatic discharge capability of approximately ±0.5 kV to 15 kV at approximately 150 pF and 500Ω.  
     
     
         17 . The composite integrated semiconductor device as claimed in  claim 15 , wherein the input surge/noise absorbing means is able to withstand an electrostatic discharge capability of approximately ±1000V at approximately 100 pF and 1500Ω.  
     
     
         18 . The composite integrated semiconductor device as claimed in  claim 15 , wherein the input surge/noise absorbing means is able to withstand an electromagnetic compatibility capability of approximately 20 to 100 V/m at approximately 10 kHz to 200 MHz.  
     
     
         19 . The composite integrated semiconductor device as claimed in  claim 15 , wherein the outputting means is positioned at an angle of about 90° or more with respect to a position of the inputting means.  
     
     
         20 . A composite integrated semiconductor device, comprising: 
 inputting means for inputting an input electrical signal;    outputting means for outputting an output electrical signal;    attenuating/level-shifting means for attenuating or level-shifting the input electrical signal, and being connected between the inputting means and the outputting means;    electrical signal converting means for converting the input electrical signal to the output electrical signal, and being connected between the inputting means and the outputting means; and    a plurality of semiconductor components forming the attenuating/level-shifting means and the electrical signal converting means, and being integrated in a semiconductor substrate.    
     
     
         21 . The composite integrated semiconductor device as claimed in  claim 20 , wherein the outputting means is positioned at an angle of about 90° or more with respect to a position of the inputting means.  
     
     
         22 . A composite integrated semiconductor device, comprising: 
 inputting means for inputting an input electrical signal;    outputting means for outputting an output electrical signal;    input surge/noise absorbing means for absorbing surge or noise of the input electrical signal, and being connected between the inputting means and the outputting means;    attenuating/level-shifting means for attenuating or level-shifting the input electrical signal, and being connected between the inputting means and the outputting means;    electrical signal converting means for converting the input electrical signal to the output electrical signal, and being connected between the inputting means and the outputting means; and    a plurality of semiconductor components forming the input surge/noise absorbing means, the attenuating/level-shifting means, and the electrical signal converting means, and being integrated in a semiconductor substrate.    
     
     
         23 . The composite integrated semiconductor device as claimed in  claim 22 , wherein the input surge/noise absorbing means is able to withstand an electrostatic discharge capability of approximately ±0.5 kV to 15 kV at approximately 150 pF and 500Ω.  
     
     
         24 . The composite integrated semiconductor device as claimed in  claim 22 , wherein the input surge/noise absorbing means is able to withstand an electrostatic discharge capability of approximately ±1000V at approximately 100 pF and 1500Ω.  
     
     
         25 . The composite integrated semiconductor device as claimed in  claim 22 , wherein the input surge/noise absorbing means is able to withstand an electromagnetic compatibility capability of approximately 20 to 100 V/m at approximately 10 kHz to 200 MHz.  
     
     
         26 . The composite integrated semiconductor device as claimed in  claim 22 , wherein the outputting means is positioned at an angle of about 90° or more with respect to a position of the inputting means.  
     
     
         27 . A composite integrated semiconductor device, comprising: 
 a plurality of inputting devices receiving an input electrical signal;    a plurality of outputting devices transmitting an output electrical signal;    a plurality of input surge/noise absorbing circuits to absorb surge or noise of the input electrical signal, each of the surge/noise absorbing circuits being connected between respective ones of the inputting devices and corresponding outputting devices; and    a plurality of semiconductor components forming the input surge/noise absorbing circuit, and being integrated in a semiconductor substrate.    
     
     
         28 . The composite integrated semiconductor device as claimed in  claim 27 , wherein the input surge/noise absorbing means is able to withstand an electrostatic discharge capability of approximately ±0.5 kV to 15 kV at approximately 150 pF and 500Ω.  
     
     
         29 . The composite integrated semiconductor device as claimed in  claim 27 , wherein the input surge/noise absorbing means is able to withstand an electrostatic discharge capability of approximately ±1000V at approximately 100 pF and 1500Ω.  
     
     
         30 . The composite integrated semiconductor device as claimed in  claim 27 , wherein the input surge/noise absorbing means is able to withstand an electromagnetic compatibility capability of approximately 20 to 100 V/m at approximately 10 kHz to 200 MHz.  
     
     
         31 . The composite integrated semiconductor device as claimed in  claim 27 , wherein the outputting devices are positioned at an angle of about 90° or more with respect to a position of the inputting devices.  
     
     
         32 . A composite integrated semiconductor device, comprising: 
 a plurality of inputting devices receiving an input electrical signal;    a plurality of outputting devices transmitting an output electrical signal;    a plurality of attenuating/level-shifting circuits to attenuate or level-shift the input electrical signal, each of the attenuating/level-shifting circuits being connected between respective ones of the inputting devices and corresponding outputting devices; and    a plurality of semiconductor components forming the attenuating/level-shifting circuits and being integrated in a semiconductor substrate.    
     
     
         33 . The composite integrated semiconductor device as claimed in  claim 32 , wherein the outputting devices are positioned at an angle of about 90° or more with respect to a position of the inputting devices.  
     
     
         34 . A composite integrated semiconductor device, comprising: 
 a plurality of inputting devices receiving an input electrical signal;    a plurality of outputting devices transmitting an output electrical signal;    a plurality of electrical signal converting circuits to convert the input electrical signal to the output electrical signal, each of the electrical signal converting circuits being connected between respective ones of the inputting devices and corresponding outputting devices; and    a plurality of semiconductor components forming the electrical signal converting circuits and being integrated in a semiconductor substrate.    
     
     
         35 . The composite integrated semiconductor device as claimed in  claim 34 , wherein the outputting devices are positioned at an angle of about 90° or more with respect to a position of the inputting devices.  
     
     
         36 . A composite integrated semiconductor device, comprising: 
 a plurality of inputting devices receiving an input electrical signal;    a plurality of outputting devices transmitting an output electrical signal;    a plurality of input surge/noise absorbing circuits to absorb surge or noise of the input electrical signal, each of the input surge/noise absorbing circuits being connected between respective ones of the inputting devices and corresponding outputting devices;    a plurality of attenuating/level-shifting circuits to attenuate or level-shift the input electrical signal, each of the attenuating/level-shifting circuits being connected between respective ones of the inputting devices and corresponding outputting devices; and    a plurality of semiconductor components forming the input surge/noise absorbing circuits and the attenuating/level-shifting circuits, and being integrated in a semiconductor substrate.    
     
     
         37 . The composite integrated semiconductor device as claimed in  claim 36 , wherein the input surge/noise absorbing means is able to withstand an electrostatic discharge capability of approximately ±0.5 kV to 15 kV at approximately 150 pF and 500Ω.  
     
     
         38 . The composite integrated semiconductor device as claimed in  claim 36 , wherein the input surge/noise absorbing means is able to withstand an electrostatic discharge capability of approximately ±1000V at approximately 100 pF and 1500Ω.  
     
     
         39 . The composite integrated semiconductor device as claimed in  claim 36 , wherein the input surge/noise absorbing means is able to withstand an electromagnetic compatibility capability of approximately 20 to 100 V/m at approximately 10 kHz to 200 MHz.  
     
     
         40 . The composite integrated semiconductor device as claimed in  claim 36 , wherein the outputting devices are positioned at an angle of about 90° or more with respect to a position of the inputting devices.  
     
     
         41 . A composite integrated semiconductor device, comprising: 
 a plurality of inputting devices receiving an input electrical signal;    a plurality of outputting devices transmitting an output electrical signal;    a plurality of input surge/noise absorbing circuits to absorb surge or noise of the input electrical signal, each of the input surge/noise absorbing circuits being connected between respective ones of the inputting devices and corresponding outputting devices;    a plurality of electrical signal converting circuits to convert the input electrical signal to the output electrical signal, each of the electrical signal converting circuits being connected between respective ones of the inputting devices and corresponding outputting devices; and    a plurality of semiconductor components forming the input surge/noise absorbing circuits and the electrical signal converting circuits, and being integrated in a semiconductor substrate.    
     
     
         42 . The composite integrated semiconductor device as claimed in  claim 41 , wherein the input surge/noise absorbing means is able to withstand an electrostatic discharge capability of approximately ±0.5 kV to 15 kV at approximately 150 pF and 500Ω.  
     
     
         43 . The composite integrated semiconductor device as claimed in  claim 41 , wherein the input surge/noise absorbing means is able to withstand an electrostatic discharge capability of approximately ±1000V at approximately 100 pF and 1500Ω.  
     
     
         44 . The composite integrated semiconductor device as claimed in  claim 41 , wherein the input surge/noise absorbing means is able to withstand an electromagnetic compatibility capability of approximately 20 to 100 V/m at approximately 10 kHz to 200 MHz.  
     
     
         45 . The composite integrated semiconductor device as claimed in  claim 41 , wherein the outputting devices are positioned at an angle of about 90° or more with respect to a position of the inputting devices.  
     
     
         46 . A composite integrated semiconductor device, comprising: 
 a plurality of inputting devices receiving an input electrical signal;    a plurality of outputting devices transmitting an output electrical signal;    a plurality of attenuating/level-shifting circuits to attenuate or level-shift the input electrical signal, each of the attenuating/level-shifting circuits being connected between respective ones of the inputting devices and corresponding outputting devices;    a plurality of electrical signal converting circuits to convert the input electrical signal to the output electrical signal, each of the electrical signal converting circuits being connected between respective ones of the inputting devices and corresponding outputting devices; and    a plurality of semiconductor components forming the attenuating/level-shifting circuits and the electrical signal converting circuits, and being integrated in a semiconductor substrate.    
     
     
         47 . The composite integrated semiconductor device as claimed in  claim 46 , wherein the outputting devices are positioned at an angle of about 90° or more with respect to a position of the inputting devices.  
     
     
         48 . A composite integrated semiconductor device, comprising: 
 a plurality of inputting devices receiving an input electrical signal;    a plurality of outputting devices transmitting an output electrical signal;    a plurality of input surge/noise absorbing circuits to absorb surge or noise of the input electrical signal, each of the input surge/noise absorbing circuits being connected between respective ones of the inputting devices and corresponding outputting devices;    a plurality of attenuating/level-shifting circuits to attenuate or level-shift the input electrical signal, each of the attenuating/level-shifting circuits being connected between respective ones of the inputting devices and corresponding outputting devices;    a plurality of electrical signal converting circuits to convert the input electrical signal to the output electrical signal, each of the electrical signal converting circuits being connected between respective ones of the inputting devices and corresponding outputting devices; and    a plurality of semiconductor components forming the input surge/noise absorbing circuits, the attenuating/level-shifting circuits, and the electrical signal converting circuits, and being integrated in a semiconductor substrate.    
     
     
         49 . The composite integrated semiconductor device as claimed in  claim 48 , wherein the input surge/noise absorbing means is able to withstand an electrostatic discharge capability of approximately ±0.5 kV to 15 kV at approximately 150 pF and 500Ω.  
     
     
         50 . The composite integrated semiconductor device as claimed in  claim 48 , wherein the input surge/noise absorbing means is able to withstand an electrostatic discharge capability of approximately ±1000V at approximately 100 pF and 1500Ω.  
     
     
         51 . The composite integrated semiconductor device as claimed in  claim 48 , wherein the input surge/noise absorbing means is able to withstand an electromagnetic compatibility capability of approximately 20 to 100 V/m at approximately 10 kHz to 200 MHz.  
     
     
         52 . The composite integrated semiconductor device as claimed in  claim 48 , wherein the outputting devices are positioned at an angle of about  90 ° or more with respect to a position of the inputting devices.