Oscillating fixed abrasive CMP system and methods for implementing the same

Abstract

A method for polishing a semiconductor wafer is provided. The method includes providing a polishing pad strip connected between a first point and a second point and applying a controlled tension to the polishing pad strip. The method also includes oscillating the polishing pad strip between the first point and the second point while applying the controlled tension. Also included in the method is applying the semiconductor wafer to the oscillating polishing pad strip.

What is claimed is:  
     
         1 . A method for polishing a semiconductor wafer, comprising: 
 providing a polishing pad strip connected between a first point and a second point;    applying a controlled tension to the polishing pad strip;    oscillating the polishing pad strip between the first point and the second point while applying the controlled tension; and    applying the semiconductor wafer to the oscillating polishing pad strip.    
     
     
         2 . A method for polishing a semiconductor wafer as recited in  claim 1 , further comprising: 
 applying a chemical solution to the polishing pad strip before the applying of the semiconductor wafer.    
     
     
         3 . A method for polishing a semiconductor wafer as recited in  claim 1 , wherein the polishing pad strip is a fixed abrasive pad.  
     
     
         4 . A method for polishing a semiconductor wafer as recited in  claim 1 , further comprising: 
 monitoring a linear velocity of the oscillating polishing pad strip; and    controlling a setting of the linear velocity.    
     
     
         5 . A method for polishing a semiconductor wafer as recited in  claim 1 , further comprising: 
 monitoring a tension of the polishing pad strip; and    controlling a setting of the tension.    
     
     
         6 . A method for preparing a substrate, comprising: 
 providing a polishing pad strip connected between a first point and a second point;    applying a controlled tension to the polishing pad strip;    oscillating the polishing pad strip between the first point and the second point while applying the controlled tension;    applying the substrate to the oscillating polishing pad strip; and    continually monitoring the controlled tension so as to enable adjustments while applying the substrate to the polishing pad strip.    
     
     
         7 . A method for preparing a substrate as recited in  claim 6 , further comprising: 
 applying a chemical solution to the polishing pad strip before the applying of the substrate.    
     
     
         8 . A method for preparing a substrate as recited in  claim 6 , wherein the polishing pad strip is one of a fixed abrasive polishing pad strip and a non-fixed abrasive polishing pad strip.  
     
     
         9 . A method for preparing a substrate as recited in  claim 6 , further comprising: 
 monitoring a linear velocity of the oscillating polishing pad strip; and    controlling a setting of the linear velocity.    
     
     
         10 . A method for preparing a substrate as recited in  claim 6 , further comprising: 
 monitoring a tension of the polishing pad strip; and    controlling a setting of the tension.    
     
     
         11 . A method for preparing a substrate as recited in  claim 6 , further comprising: 
 providing a supply of the polishing pad strip in a feed roll defined at the first point.    
     
     
         12 . A method for preparing a substrate as recited in  claim 11 , further comprising: 
 collecting the supply of the polishing pad strip in a take-up roll defined at the second point.    
     
     
         13 . A method for preparing a substrate as recited in  claim 12 , wherein the operation of applying controlled tension to the polishing pad strip includes, 
 pulling on the feed roll; and    pulling on the take-up roll.    
     
     
         14 . A method for planarizing an active surface of a substrate, comprising: 
 providing a preparation strip connected between a first point and a second point;    applying a controlled tension to the preparation strip;    oscillating the preparation strip between the first point and the second point while applying the controlled tension;    controlling a linear velocity of the oscillating;    applying the active surface of the substrate to the oscillating preparation strip; and    continually monitoring the controlled tension and the linear velocity of the preparation strip so as to enable adjustments while applying the active surface of the substrate to the preparation strip.    
     
     
         15 . A method for planarizing an active surface of a substrate as recited in  claim 14 , further comprising: 
 applying a chemical solution to the preparation strip before the applying of the active surface of the substrate.    
     
     
         16 . A method for planarizing an active surface of a substrate as recited in  claim 6 , wherein the preparation strip is one of a fixed abrasive polishing pad strip and a non-fixed abrasive polishing pad strip.  
     
     
         17 . A method for planarizing an active surface of a substrate as recited in  claim 14 , wherein the operation of controlling the liner velocity of the oscillating includes, 
 monitoring a linear velocity of the oscillating preparation strip; and    controlling a setting of the linear velocity.    
     
     
         18 . A method for planarizing an active surface of a substrate as recited in  claim 16 , further comprising: 
 providing a supply of the preparation strip in a feed roll defined at the first point.    
     
     
         19 . A method for planarizing an active surface of a substrate as recited in  claim 18 , further comprising: 
 collecting the supply of the preparation strip in a take-up roll defined at the second point.    
     
     
         20 . A method for planarizing an active surface of a substrate as recited in  claim 18 , wherein the operation of applying controlled tension to the preparation strip includes, 
 pulling on the feed roll; and    pulling on the take-up roll.