Plating system

Abstract

A plating system in which a plating process of a semiconductor substrate held by a wafer holder provided on the top of a plating tank is conducted while jetting the plating liquid upward from the lower side in the plating tank, wherein a plurality of nozzles for removing bubbles adhered on the surface of the semiconductor substrate are provided in the tank so that the plating liquid is jetted from the nozzles to the semiconductor substrate.

What is claimed is:  
     
         1 . A plating system in which a plating process of a semiconductor substrate held by a wafer holder provided on the top of a plating tank is conducted while jetting a plating liquid upward from the lower side in said plating tank, wherein 
 a plurality of nozzles for removing bubbles adhered on the surface of said semiconductor substrate are provided in said tank so that said plating liquid is jetted from said nozzles to said semiconductor substrate.    
     
     
         2 . The plating system according to  claim 1 , wherein said nozzles are constructed so that the plating liquid jetted from said nozzles is discharged outward from the center of said semiconductor substrate.  
     
     
         3 . A plating system having an inner tank, an outer tank provided so as to surround said inner tank for receiving a plating liquid from said inner tank, a reservoir for reserving the plating liquid in said outer tank, a plating liquid admission pipe connecting said reservoir and said inner tank, and a jet pump provided on said plating liquid admission pipe for jetting said plating liquid in said inner tank in which a plating process of a semiconductor substrate held by a wafer holder provided on the top of said inner tank is conducted while jetting said plating liquid upward from the lower side in said inner tank, wherein 
 a plurality of nozzles for removing bubbles adhered on the surface of said semiconductor substrate are provided in said inner tank so that the plating liquid is jetted from said nozzles to said semiconductor substrate, and the plating liquid jetted from said nozzles is supplied from a split-flow pipe provided to be branched from said plating liquid admission pipe.    
     
     
         4 . The plating system according to  claim 3 , wherein air operate valves are provided on said split-flow pipe so as to control discharge of the plating liquid of said nozzles.  
     
     
         5 . A plating system having an inner tank, an outer tank provided so as to surround said inner tank for receiving a plating liquid from said inner tank, a reservoir for reserving the plating liquid in said outer tank, a plating liquid admission pipe connecting said reservoir and said inner tank, and a jet pump provided on said plating liquid admission pipe for jetting said plating liquid in said inner tank in which a plating process of a semiconductor substrate held by a wafer holder provided on the top of said inner tank is conducted while jetting said plating liquid upward from the lower side in said inner tank, comprising: 
 a plurality of nozzles provided in said inner tank discharging said plating liquid to said semiconductor device to remove bubbles adhered on the surface of said semiconductor substrate; and nozzle discharge pumps supplying the plating liquid in said reservoir to said nozzles,    wherein using said nozzle discharge pumps, the discharge amount of the plating liquid discharged from said nozzles is controlled.    
     
     
         6 . The plating system according to  claim 3  or  5 , further comprising control means for controlling the discharge timing of said nozzles.  
     
     
         7 . The plating system according to  claim 1 ,  3  or  5 , wherein when discharging the plating liquid from said nozzles, an electric current smaller than that at a plating process is flowed to protect a seem film.