Electroplating solution for copper thin film

Abstract

A plating solution containing 10 to 40 wt % of copper hexafluorosilicate. With the use of this plating solution, a copper thin film which has a low film stress and a low resistivity and which strongly (111)-oriented is plating-deposited on the fine pattern portion a copper seed layer, and film peeling caused by deterioration of an adhesion force between an underlying barrier layer and a copper seed layer even in a heat treatment process and in a chemical mechanical polishing (CMP) process after plating deposition is prevented.

What is claimed is:  
     
         1 . An electroplating solution for a copper thin film wherein said solution contains 10 to 40 wt % of copper hexafluorosilicate and is used as an electrolyte in plating in which a copper thin film is selectively plating-deposited on a copper seed layer.  
     
     
         2 . The electroplating solution according to  claim 1 , wherein said solution is used for depositing a copper thin film partially or entirely on a printed circuit board, a glass substrate, and a silicon wafer which are provided with or without a pattern.  
     
     
         3 . The electroplating solution according to  claim 1 , wherein said solution is used in such a condition that a current density during plating is within a range of 0.5 to 1.5 A/dm 2 .  
     
     
         4 . The electroplating solution according to  claim 1 , wherein said solution is used in such a condition that a plating solution temperature during plating is within a range of 20 to 40° C.  
     
     
         5 . An electroplating solution according to  claim 1 , wherein said solution is used in such a condition that an additive agent in a range of 0.5 to 1.5 wt % is added thereto during plating.