Process and apparatus for removal of photoresist from semiconductor wafers

Abstract

A process for removing photoresist from semiconductor wafers is disclosed wherein pressure in excess of one atmosphere is applied to ozone, followed by a mixing of the ozone with deionized water via a series of nozzles, and finally where the semiconductor wafers having at least one layer of photoresist are exposed to the mixture of ozone and deionized water. The temperature during the process is maintained at above ambient temperatures of 20-21° C. or 70° F. An apparatus for the removal of photoresist from semiconductor wafers wherein the apparatus is comprised of a tank capable of holding semiconductor wafers, a series of nozzles, a source of ozone connected to the tank, a source of deionized water connected to the tank; and finally a means for recirculating the deionized water connected to the tank

What is claimed is:  
     
         1 . A process for removing photoresist from semiconductor wafers comprising applying pressure in excess of one atmosphere to ozone; mixing said ozone with deionized water; and exposing semiconductor wafers having at least one layer of photoresist to said mixture of ozone and deionized water via at least one nozzle.  
     
     
         2 . The process according to  claim 1  further comprising the step of placing the semiconductor wafers within a processing tank.  
     
     
         3 . The process according to  claim 1  further comprising the step of keeping the temperature in the processing tank at ambient temperature.  
     
     
         4 . The process according to  claim 3  wherein the temperature is above 20-21° C.  
     
     
         5 . The process according to  claim 1  wherein the mixture of ozone and deionized water is recirculated and flows back into the processing tank.  
     
     
         6 . The process according to  claim 1  wherein the mixture of deionized water and ozone is recirculated and ozone added thereby keeping the concentration of ozone in said mixture about constant.  
     
     
         7 . The process according to  claim 7  wherein said mixture of deionized water and ozone is agitated via at least one nozzle.  
     
     
         8 . The process according to  claim 1  where said mixture of deionized water and ozone is a vapor within said processing tank.  
     
     
         9 . The process according to  claim 2  wherein said mixture of deionized water and ozone is pumped into said processing tank in droplets.  
     
     
         11 . An apparatus for the removal of photoresist from semiconductor wafers, comprising: 
 (a) a tank capable of holding semiconductor wafers;    (b) at least one nozzle set within said tank;    (c) a source of ozone connected to said tank;    (d) a source of deionized water connected to said tank; and    (e) a means for recirculating said deionized water.    
     
     
         12 . An apparatus according to  claim 11  further comprising a pressure plenum connected to said source of ozone.  
     
     
         13 . The apparatus according to  claim 11  wherein said pressure plenum is set in excess of one atmosphere.  
     
     
         14 . An apparatus according to  claim 11  further comprising a means for temperature control.  
     
     
         15 . An apparatus according to  claim 14  wherein said temperature is above 20-21° C.  
     
     
         16 . An apparatus according to  claim 11  wherein said means for recirculating said deionized water is connected to said source of ozone.  
     
     
         17 . An apparatus according to  claim 11  wherein said means for recirculating said deionized water is connected to a pressure plenum.  
     
     
         18 . The apparatus according to  claim 11  further comprising an ozonator.  
     
     
         19 . The apparatus according to  claim 11  further comprising a filter connected to said processing tank.  
     
     
         20 . The apparatus according to  claim 11  wherein said source of ozone is an ozone generator.  
     
     
         21 . The apparatus according to  claim 11  wherein said means for recirculating said deionized water is a pump.  
     
     
         22 . The apparatus according to  claim 11  wherein the nozzles are at the top of the process tank.