Composition for sealing a semiconductor device, semiconductor device and method of manufacturing the same

Abstract

A composition for sealing a semiconductor device contains polyphenylene sulfide wherein a line expansion coefficient at 150° C. to 200° C. is 4.75×10 −5 [1/° C.] or less, a line thermal expansion coefficient at 80 to 130° C. is 6.0×10 −5 [1/° C.] or less, and a line expansion coefficient ratio between the flow direction and a normal direction of the flow direction is 0.55 or more.

What is claimed is:  
     
         1 . A composition for sealing a semiconductor device having thermoplastic properties and a line expansion coefficient of 6.0×10 −5 [1/° C.] or less at a temperature of 80° C. to 130° C.  
     
     
         2 . A composition for sealing a semiconductor device according to  claim 1 , wherein the line expansion coefficient 4.75×10 −5  [1/° C.] or less at a temperature of 150° C. to 200° C.  
     
     
         3 . A composition for sealing a semiconductor device according to  claim 1 , wherein a line expansion coefficient ratio between a flow direction and a normal direction of the flow direction is 0.55 or more.  
     
     
         4 . A composition for sealing a semiconductor device according to  claim 1 , wherein the composition has a bending strength after solidification is 74 MPa or more.  
     
     
         5 . A composition for sealing a semiconductor device according to  claim 1 , wherein an adhesion imparting agent is added to improve adhesion properties to another material by binding with a polar group.  
     
     
         6 . A composition for sealing a semiconductor device according to  claim 1 , further containing silica particles.  
     
     
         7 . A composition for sealing a semiconductor device according to  claim 1 , further containing a fibrous material.  
     
     
         8 . A composition for sealing a semiconductor device according to  claim 1 , further containing a thermosetting resin material.  
     
     
         9 . A composition for sealing a semiconductor device according to  claim 1 , wherein a product obtained by multiplying a value of a line expansion at 25 to 80° C. plus a line expansion at 80-125° C. after solidification, by a bending strength is 25 MPa or less.  
     
     
         10 . A semiconductor device comprising: 
 a semiconductor element;    a semiconductor resin composition for sealing the semiconductor element; and    a conducting material electrically connected to the semiconductor element one end of which is sealed with the semiconductor resin composition, wherein the semiconductor sealing resin composition has thermoplastic properties and a thermal expansion coefficient is 6.0×10 −5 [1/° C.] or less at a temperature of 80 to 130° C.    
     
     
         11 . A semiconductor device according to  claim 10 , wherein the semiconductor sealing resin composition has thermoplastic properties and a thermal expansion coefficient at 150 to 200° C. is 4.75×10 −5 [1/° C.] or less.  
     
     
         12 . A semiconductor device according to  claim 10 , 
 wherein the semiconductor sealing resin composition has thermoplastic properties and a line expansion coefficient ratio between a flow direction and a normal direction of the flow direction is 0.55 or more.    
     
     
         13 . A semiconductor device according to  claim 10 , 
 wherein a bending strength of the semiconductor sealing resin composition after solidification is 74 MPa or more.    
     
     
         14 . A semiconductor device according to  claim 10 , wherein an adhesion imparting agent is added the semiconductor sealing resin composition to improve adhesion properties to another material by binding with a polar group.  
     
     
         15 . A semiconductor device according to  claim 10 , wherein the semiconductor sealing resin composition contains silica particles.  
     
     
         16 . A semiconductor device according to  claim 10 , wherein the semiconductor sealing resin composition contains a fibrous material.  
     
     
         17 . A semiconductor device according to  claim 10 , wherein the semiconductor sealing resin composition contains a thermosetting material.  
     
     
         18 . A semiconductor device according to  claim 10 , wherein the semiconductor element is coated with polyimide.  
     
     
         19 . A semiconductor device according to  claims 10  to  13 , wherein the semiconductor sealing resin composition is thermoplastic and a product obtained by multiplying a value of a line expansion at 25 to 80° C. plus a line expansion at 80-125° C. after solidification, by a bending strength is 25 MPa or less.  
     
     
         20 . A method of manufacturing a semiconductor device comprising the steps of: 
 electrically connecting a semiconductor element and a conducting material; and    sealing the semiconductor element with a thermoplastic semiconductor sealing resin composition and a line expansion coefficient at 80 to 130° C. is 6.0×10 −5  [1/° C.] or less.