High-PTF sputtering targets and method of manufacturing

Abstract

A target for a deposition apparatus is formed by blending at least two different types of powders together and consolidating the powders with a powder metallurgy process to form a billet. The target is then formed from the billet. The target includes a first material phase having a first PTF and a second material phase having a second PTF higher than the first PTF. The second PTF is also higher than a PTF of a material having the same chemistry as the target.

What is claimed is:  
     
         1 . A target for a deposition apparatus, comprising: 
 a first material phase having a first PTF; and    a second material phase having a second PTF, the second PTF being higher than the first PTF.    
     
     
         2 . The target according to  claim 1 , wherein the target has a chemistry differing from chemistries of both the first and second material phases.  
     
     
         3 . The target according to  claim 2 , wherein the second PTF is higher than a PTF of a material having a same chemistry as the target.  
     
     
         4 . The target according to  claim 1 , wherein a chemistry of the target is that for a soft magnetic material.  
     
     
         5 . The target according to  claim 4 , wherein the target has a thickness greater than 3 mm, a diameter greater than 50 mm, and a PTF of the target is greater than 5%.  
     
     
         6 . The target according to  claim 5 , wherein a PTF of the target is greater than 20%.  
     
     
         7 . The target according to  claim 6 , wherein the chemistry of the target includes at least 40 atomic% of Fe or Ni.  
     
     
         8 . The target according to  claim 7 , wherein the chemistry of the target does not include Co.  
     
     
         9 . The target according to  claim 5 , wherein a PTF of the target is greater than 50%.  
     
     
         10 . The target according to  claim 9 , wherein the chemistry of the target includes at least 40 atomic% of Co and does not include Fe and Ni.  
     
     
         11 . The target according to  claim 1 , wherein the average grain-size of the target is less than 500 microns.  
     
     
         12 . The target according to  claim 11 , wherein the average grain-size of the target is less than 200 microns.  
     
     
         13 . The target according to  claim 1 , wherein the first and second phases consist essentially of elemental phases.  
     
     
         14 . The target according to  claim 1 , wherein the first and second phases consist essentially of alloy phases.  
     
     
         15 . The target according to  claim 1 , wherein one of the first and second phases is an elemental phase and another of the first and second phases is an alloy phase.  
     
     
         16 . The target according to  claim 1 , wherein the target has a density greater than 80% of theoretical.  
     
     
         17 . The target according to  claim 16 , wherein the target has a density greater than 95% of theoretical.  
     
     
         18 . The target according to  claim 1 , wherein the target is formed by powder metallurgy.  
     
     
         19 . A method of forming a target for a deposition apparatus, comprising the steps of: 
 blending at least two different types of elemental of alloy powders together;    consolidating the powders with a powder metallurgy process to form a billet; and    forming the target from the billet.    
     
     
         20 . The method according to  claim 19 , wherein the at least two powders consist essentially of elemental powders.  
     
     
         21 . The method according to  claim 19 , wherein the at least two powders consist essentially of alloy powders.  
     
     
         22 . The method according to  claim 19 , wherein one of the at least two powders is an elemental powder and another of the at least two powders is an alloy powder.  
     
     
         23 . The method according to  claim 19 , wherein the consolidation of the powders is by isostatic pressing.  
     
     
         24 . The method according to  claim 19 , wherein the consolidation of the powders is by uniaxial pressing.  
     
     
         25 . The method according to  claim 19 , wherein the aggregate diameter of each of the powders is less than 500 microns.  
     
     
         26 . The method according to  claim 25 , wherein the aggregate diameter of each of the powders is less than 200 microns.  
     
     
         27 . The method according to  claim 19 , wherein the target includes a first material phase having a first PTF and a second material phase having a second PTF, and the second PTF is higher than the first PTF.  
     
     
         28 . The method according to  claim 27 , wherein the target has a chemistry differing from chemistries of both the first and second material phases.  
     
     
         29 . The method according to  claim 28 , wherein the second PTF is higher than a PTF of a material having a same chemistry as the target.  
     
     
         30 . The method according to  claim 19 , wherein a chemistry of the target is that for a soft magnetic material.  
     
     
         31 . The method according to  claim 30 , wherein the target has a thickness greater than 3 mm, a diameter greater than 50 mm, and a PTF of the target is greater than 5%.  
     
     
         32 . The method according to  claim 31 , wherein a PTF of the target is greater than 20%.  
     
     
         33 . The method according to  claim 32 , wherein the chemistry of the target includes at least 40 atomic% of Fe or Ni.  
     
     
         34 . The method according to  claim 33 , wherein the chemistry of the target does not include Co.  
     
     
         35 . The method according to  claim 31 , wherein a PTF of the target is greater than 50%.  
     
     
         36 . The method according to  claim 35 , wherein the chemistry of the target includes at least 40 atomic% of Co and does not include Fe and Ni.  
     
     
         37 . The method according to  claim 19 , wherein the target has a density greater than 80% of theoretical.  
     
     
         38 . The method according to  claim 37 , wherein the target has a density greater than 95% of theoretical.  
     
     
         39 . A method of forming a magnetic disk, comprising the steps of: 
 providing a substrate of the magnetic disk; and    depositing material from a target onto the substrate, wherein    the target includes a first material phase having a first PTF and a second material phase having a second PTF, the second PTF higher than the first PTF.    
     
     
         40 . The method according to  claim 39 , wherein the target has a chemistry differing from chemistries of both the first and second material phases.  
     
     
         41 . The method according to  claim 39 , wherein a chemistry of the target is that for a soft magnetic material.  
     
     
         42 . The method according to  claim 39 , wherein the target is formed by powder metallurgy.  
     
     
         43 . A disk drive, comprising: 
 a magnetic disk; wherein    the magnetic disk is formed by depositing material from a target onto a substrate of the magnetic disk, the target includes a first material phase having a first PTF and a second material phase having a second PTF, the second PTF higher than the first PTF.    
     
     
         44 . The disk drive according to  claim 43 , wherein the target has a chemistry differing from chemistries of both the first and second material phases.  
     
     
         45 . The disk drive according to  claim 43 , wherein a chemistry of the target is that for a soft magnetic material.  
     
     
         46 . The method according to  claim 43 , wherein the target is formed by powder metallurgy.