Spin electronic material and fabrication method thereof

Abstract

A spin electronic material exhibiting a spin-dependent electronic effect includes zincblende TE-VE, where TE stands for V, Cr or Mn and VE stands for As or Sb.

What is claimed is:  
     
         1 . A spin electronic material exhibiting a spin-dependent electronic effect, which material comprises zincblende TE-VE, where TE stands for V, Cr or Mn and VE stands for As or Sb.  
     
     
         2 . A spin electronic material exhibiting a spin-dependent electronic effect, which material comprises zincblende TE-VE, where TE stands for V, Cr or Mn and VE stands for As or Sb, and a zincblende Group III-V semiconductor of GaAs, AlAs, InAs, GaSb, AlSb or a mixed crystal thereof.  
     
     
         3 . A spin electronic material exhibiting a spin-dependent electronic effect and enabling control of degree of spin polarization, intensity and anisotropy of magnetism, and ferromagnetic transition temperature, which material comprises a mixed crystal of TE-VE, where TE stands for V, Cr or Mn and VE stands for As or Sb, and a different zincblende TE*-VE* represented by TE 1−x TE* x -VE 1−y VE* y  (where 0<x<1, 0<y<1, TE* is V, Cr or Mn and different from TE, and VE* is As or Sb and different from VE).  
     
     
         4 . A spin electronic material exhibiting a spin-dependent electronic effect and enabling control of degree of spin polarization, intensity and anisotropy of magnetism, and ferromagnetic transition temperature, which material comprises multilayers of zincblende TE-VE, where TE stands for V, Cr or Mn and VE stands for As or Sb, and a zincblende Group III-V semiconductor of GaAs, AlAs, InAs, GaSb, InSb or a mixed crystal thereof represented by {[TE-VE]×d1/[III-V]×d2}×N (where [III-V] stands for zincblende Group III-V semiconductor, d1 for thickness of the zincblende TE-VE, d2 for thickness of the semiconductor and N for repetition period).  
     
     
         5 . A spin electronic material exhibiting a spin-dependent electronic effect according to  claim 1 , wherein the zincblende TE-VE is added with at least one element selected from the group consisting of Li, Be, B, C, N, O, P, Na, Mg, Al, Si, P, S, Cl, K, Ca, Sc, Ti, Fe, Co, Ni, Cu, Zn, Ga, Ge, Se, Br, Rb, Sr, Y, Zr, Nb, Mo, Ru, Rh, Pd, Ag, Cd, In, Sn, Te, I, Cs, Ba, La, Hf, Ta, W, Re, Os, Ir, Pt, Au, Hg, Tl, Pb and Bi, whereby the spin electronic material enables control of degree of spin polarization, intensity and anisotropy of magnetism, and ferromagnetic transition temperature.  
     
     
         6 . A spin electronic material exhibiting a spin-dependent electronic effect according to  claim 2 , wherein the zincblende TE-VE is added with at least one element selected from the group consisting of Li, Be, B, C, N, O, P, Na, Mg, Al, Si, P, S, Cl, K, Ca, Sc, Ti, Fe, Co, Ni, Cu, Zn, Ga, Ge, Se, Br, Rb, Sr, Y, Zr, Nb, Mo, Ru, Rh, Pd, Ag, Cd, In, Sn, Te, I, Cs, Ba, La, Hf, Ta, W, Re, Os, Ir, Pt, Au, Hg, Tl, Pb and Bi, whereby the spin electronic material enables control of degree of spin polarization, intensity and anisotropy of magnetism, and ferromagnetic transition temperature.  
     
     
         7 . A spin electronic material exhibiting a spin-dependent electronic effect and enabling control of degree of spin polarization, intensity and anisotropy of magnetism, and ferromagnetic transition temperature according to  claim 3 , wherein the zincblende TE-VE is added with at least one element selected from the group consisting of Li, Be, B, C, N, O, P, Na, Mg, Al, Si, P, S, Cl, K, Ca, Sc, Ti, Fe, Co, Ni, Cu, Zn, Ga, Ge, Se, Br, Rb, Sr, Y, Zr, Nb, Mo, Ru, Rh, Pd, Ag, Cd, In, Sn, Te, I, Cs, Ba, La, Hf, Ta, W, Re, Os, Ir, Pt, Au, Hg, Tl, Pb and Bi.  
     
     
         8 . A spin electronic material exhibiting a spin-dependent electronic effect and enabling control of degree of spin polarization, intensity and anisotropy of magnetism, and ferromagnetic transition temperature according to  claim 4 , wherein the zincblende TE-VE is added with at least one element selected from the group consisting of Li, Be, B, C, N, O, P, Na, Mg, Al, Si, P, S, Cl, K, Ca, Sc, Ti, Fe, Co, Ni, Cu, Zn, Ga, Ge, Se, Br, Rb, Sr, Y, Zr, Nb, Mo, Ru, Rh, Pd, Ag, Cd, In, Sn, Te, I, Cs, Ba, La, Hf, Ta, U, Re, Os, Ir, Pt, Au, Hg, Tl, Pb and Bi.  
     
     
         9 . A method of fabricating a spin electronic material exhibiting a spin-dependent electronic effect comprising the steps of: 
 retaining a substrate of zincblende semiconductor electronic material at a temperature not exceeding 400° C.; and    using a non-thermal equilibrium gas phase growth process to deposit TE-VE, where TE stands for V, Cr or Mn and VE stands for As or Sb, simultaneously on the substrate.    
     
     
         10 . A method of fabricating a spin electronic material according to  claim 9 , wherein the substrate is formed of zincblende GaAs.  
     
     
         11 . A method of fabricating a spin electronic material according to  claim 9 , wherein the TE, when deposited, has a molecular beam equivalent pressure set lower than a VE molecular beam equivalent pressure.