Method for selectively metalizing dieletric materials

Abstract

Method for selectively metallizing dielectric materials, the method includes: adhesively covering dielectric materials with an activating layer comprising a conductive material, which layer is subsequently structured by way of laser ablation; and using a subsequent laser treatment to structure the activating layer in such a way that discrete conductive structures are formed, which are subsequently metallized.

1 . Method for selectively metallizing dielectric materials, characterized in that the respective dielectric material is covered with an activating layer consisting of conductive material and that structuring of the activating layer through a subsequent laser treatment occurs in such a way that discrete conductive structures are formed, which are subsequently metallized.  
     
     
         2 . Method pursuant to  claim 1 , characterized in that it is applied in the field of electronics for the production of elements and components.  
     
     
         3 . Method pursuant to  claim 1  or  2 , characterized in that it is applied in the production of printed circuit boards.  
     
     
         4 . Method pursuant to one or more of the claims  1  through  3 , characterized in that plastics and/or ceramics are used as dielectric materials.  
     
     
         5 . Method pursuant to one or more of the above claims  1  through  4 , characterized in that an activating layer consisting of a conductive polymer is applied.  
     
     
         6 . Method pursuant to  claim 5 , characterized in that polymerized or copolymerized pyrrole, furan, tiophene and/or their derivatives are used as a conductive polymer.  
     
     
         7 . Method pursuant to  claim 5 , characterized in that poly-3,4-ethylene-dioxythiophene is used as a conductive polymer.  
     
     
         8 . Method pursuant to one or more of the above claims  5  through  7 , characterized in that the conductive polymer is additionally covered with Pd and/or Cu germs.  
     
     
         9 . Method pursuant to one or more of the above claims  1  through  4 , characterized in that the activating layer consists of metal sulfides and/or metal polysulfides.  
     
     
         10 . Method pursuant to one or more of the above claims  1  through  4 , characterized in that the activating layer consists of a thin metal layer.  
     
     
         11 . Method pursuant to one or more of the above claims  1  through  10 , characterized in that metallization occurs by way of electrolytical processes.  
     
     
         12 . Method pursuant to one or more of the above claims  1  through  11 , characterized in that copper electrolytes are preferably used for metallization.  
     
     
         13 . Method pursuant to one or more of the above claims  1  through  12 , characterized in that a KrF, XeCl or Nd-YAG laser is used for structuring the activating layer.  
     
     
         14 . Method pursuant to one or more of the above claims  1  through  13 , characterized in that the conductive structures are destroyed following metallization.