US2004035717A1PendingUtilityA1

Chemical treatment method and chemical treatment apparatus

Assignee: CASIO MICRONICS CO LTDPriority: Aug 21, 2002Filed: Aug 18, 2003Published: Feb 26, 2004
Est. expiryAug 21, 2022(expired)· nominal 20-yr term from priority
H10P 50/00H05K 3/388H05K 3/26H05K 3/07H05K 2203/1157H05K 2201/0761C23F 1/26
35
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Claims

Abstract

A chemical treatment apparatus of this invention is an apparatus by which a chromium film formed on a material to be subjected to film formation is etched into a predetermined pattern. This apparatus includes a cathode electrolysis reduction device for performing an electrolysis reduction treatment for the chromium film as a cathode by using a treatment solution containing chloride ions, and an acid dip device for dipping the chromium film into an acidic treatment solution after the electrolysis reduction treatment is performed by the cathode electrolysis reduction device.

Claims

exact text as granted — not AI-modified
What is claimed is:  
     
         1 . A chemical treatment method by which a metal film formed on a material to be subjected to film formation is etched into a predetermined pattern, comprising: 
 a cathode electrolysis reduction step of performing electrolysis reduction for the metal film as a cathode by using one of a first acidic treatment solution containing an acid radical and an alkaline treatment solution containing a halogen ion; and    an acid dip step of dipping the metal film into a second acidic treatment solution after the cathode electrolysis reduction step.    
     
     
         2 . A method according to  claim 1 , wherein the first acidic treatment solution is one member selected from the group consisting of hydrochloric acid, sulfuric acid, carboxylic acid, hydrogen fluoride, and phosphoric acid.  
     
     
         3 . A method according to  claim 1 , wherein the halogen ion is one member selected from the group consisting of sodium chloride, potassium chloride, and potassium iodide.  
     
     
         4 . A method according to  claim 1 , wherein the second acidic treatment solution contains a halogen ion.  
     
     
         5 . A chemical treatment method by which a metal film formed on a material to be subjected to film formation is etched into a predetermined pattern, comprising: 
 a cathode electrolysis reduction step of performing electrolysis reduction for the metal film as a cathode by using a treatment solution containing a halogen ion; and    an acid dip step of dipping the metal film into an acidic treatment solution after the cathode electrolysis reduction step.    
     
     
         6 . A method according to  claim 5 , wherein the acidic treatment solution contains a halogen ion.  
     
     
         7 . A method according to any one of  claims 4  to  6 , wherein the halogen ion is a chloride ion.  
     
     
         8 . A method according to any one of  claims 1  to  6 , wherein the cathode electrolysis reduction step comprises dipping a portion of the metal film into a treatment solution containing a halogen ion.  
     
     
         9 . A method according to  claim 8 , wherein a metal forming the metal film is one metal selected from the group consisting of chromium, titanium, tungsten, palladium, and molybdenum.  
     
     
         10 . A method according to  claim 8 , wherein a metal forming the metal film is an alloy containing at least one of chromium, titanium, tungsten, palladium, and molybdenum.  
     
     
         11 . A chemical treatment method by which a metal film formed on a material to be subjected to film formation is etched into a predetermined pattern, 
 wherein the metal film is dipped in an acidic treatment solution containing a halogen ion, and electrolysis reduction is performed for the metal film as a cathode.    
     
     
         12 . A method according to any one of  claims 1  to  5  and  11 , wherein a metal forming the metal film is one metal selected from the group consisting of chromium, titanium, tungsten, palladium, and molybdenum.  
     
     
         13 . A method according to any one of  claims 1  to  5  and  11 , wherein a metal forming the metal film is an alloy containing at least one of chromium, titanium, tungsten, palladium, and molybdenum.  
     
     
         14 . A method according to  claim 11 , wherein the halogen ion is a chloride ion.  
     
     
         15 . A chemical treatment apparatus by which a metal film formed on a material to be subjected to film formation is etched into a predetermined pattern, comprising: 
 a cathode electrolysis reduction device which performs an electrolysis reduction treatment for the metal film as a cathode by using one of a first acidic treatment solution containing an acid radical and an alkaline treatment solution containing a halogen ion; and    an acid dip device which dips the metal film into a second acidic treatment solution after the electrolysis reduction treatment is performed by the cathode electrolysis reduction device.    
     
     
         16 . A chemical treatment apparatus by which a metal film formed on a material to be subjected to film formation is etched into a predetermined pattern, comprising an electrolysis device which dips the metal film into an acidic treatment solution containing a halogen ion, and performs an electrolysis reduction treatment for the metal film as a cathode.  
     
     
         17 . An apparatus according to  claim 15  or  16 , wherein the halogen ion is a chloride ion.  
     
     
         18 . An apparatus according to  claim 15  or  16 , wherein in the electrolysis reduction treatment, a portion of the metal film is dipped in a treatment solution containing one of a halogen ion and an acid radical.  
     
     
         19 . An apparatus according to  claim 18 , wherein the halogen ion is a chloride ion.  
     
     
         20 . An apparatus according to  claim 18 , wherein a metal forming the metal film is one metal selected from the group consisting of chromium, titanium, tungsten, palladium, and molybdenum.  
     
     
         21 . An apparatus according to  claim 18 , wherein a metal forming the metal film is an alloy containing at least one of chromium, titanium, tungsten, palladium, and molybdenum.  
     
     
         22 . An apparatus according to  claim 15  or  16 , wherein a metal forming the metal film is one metal selected from the group consisting of chromium, titanium, tungsten, palladium, and molybdenum.  
     
     
         23 . An apparatus according to  claim 15  or  16 , wherein a metal forming the metal film is an alloy containing at least one of chromium, titanium, tungsten, palladium, and molybdenum.

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