Polishing media for chemical mechanical planarization (CMP)
Abstract
A polishing media for chemical mechanical planarization (CMP) includes a layer comprised of a CMP pad material having a water-soluble material comprised of cyclodextrin dispersed therein. The layer may form part of a pad configured for rotary CMP or part of a belt pad configured for linear CMP. In one method for conducting a CMP operation, a polishing media having a layer comprised of a CMP pad material with a water-soluble material comprised of cyclodextrin dispersed therein is contacted with a slurry, water, or an aqueous solution to remove the water-soluble material comprised of cyclodextrin from the CMP pad material. In another method, the water-soluble material comprised of cyclodextrin is removed from the CMP pad material before the CMP operation.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A polishing media for chemical mechanical planarization (CMP), comprising:
a layer comprised of a CMP pad material having a water-soluble material comprised of cyclodextrin dispersed therein.
2 . The polishing media of claim 1 , wherein the CMP pad material is comprised of a thermoplastic material selected from the group consisting of polyurethane, polyurea, polyester, polyacrylate, and polyvinyl chloride.
3 . The polishing media of claim 1 , wherein the layer forms part of a pad configured for rotary CMP.
4 . The polishing media of claim 1 , wherein the layer forms part of a belt pad configured for linear CMP.
5 . The polishing media of claim 1 , wherein the layer contains 1% by volume to 60% by volume of the water-soluble material comprised of cyclodextrin.
6 . The polishing media of claim 1 , wherein the layer is formed by a fabrication process including one of spray coating, extrusion, molding, and casting.
7 . A polishing media for chemical mechanical planarization (CMP), comprising:
a layer comprised of a polyurethane-based material having a water-soluble material comprised of cyclodextrin dispersed therein.
8 . The polishing media of claim 7 , wherein the layer forms part of a pad configured for rotary CMP.
9 . The polishing media of claim 7 , wherein the layer forms part of a belt pad configured for linear CMP.
10 . The polishing media of claim 7 , wherein the layer contains 1% by volume to 60% by volume of the water-soluble material comprised of cyclodextrin.
11 . The polishing media of claim 7 , wherein the layer is formed by a fabrication process including one of spray coating, extrusion, molding, and casting.
12 . A method for conducting a chemical mechanical planarization (CMP) operation, comprising:
providing a polishing media having a layer comprised of a CMP pad material with a water-soluble material comprised of cyclodextrin dispersed therein; and contacting the layer with at least one of a slurry, water, and an aqueous solution to remove the water-soluble material comprised of cyclodextrin from the CMP pad material.
13 . The method of claim 12 , wherein the layer has an overall porosity in a range from 1% to 60%.
14 . The method of claim 12 , wherein the contacting of the layer with at least one of the slurry, water, and the aqueous solution occurs in a rotary CMP operation.
15 . The method of claim 12 , wherein the contacting of the layer with at least one of the slurry, water, and the aqueous solution occurs in a linear CMP operation.
16 . The method of claim 12 , wherein the CMP pad material is comprised of a thermoplastic material selected from the group consisting of polyurethane, polyurea, polyester, polyacrylate, and polyvinyl chloride.
17 . A method for conducting a chemical mechanical planarization (CMP) operation, comprising:
providing a polishing media having a layer comprised of a CMP pad material with a water-soluble material comprised of cyclodextrin dispersed therein; removing the water-soluble material comprised of cyclodextrin from the layer; and contacting the layer with a substrate in the presence of a slurry to planarize the substrate.
18 . The method of claim 17 , wherein the layer has an overall porosity in a range from 1% to 60%.
19 . The method of claim 17 , wherein the contacting of the layer with the substrate occurs in a rotary CMP operation.
20 . The method of claim 17 , wherein the contacting of the layer with the substrate occurs in a linear CMP operation.
21 . The method of claim 17 , wherein the CMP pad material is comprised of a thermoplastic material selected from the group consisting of polyurethane, polyurea, polyester, polyacrylate, and polyvinyl chloride.Cited by (0)
No later patents cite this yet.
References (0)
No backward citations on record.