Transparent layer of a LED device and the method for growing the same

Abstract

A transparent layer of a LED device and the method for growing the same are disclosed in this present invention. This present invention provides an improved liquid phase epitaxy (LPE) process for growing a transparent layer of a LED device. In the above-mentioned LPE process, an improved supersaturated solution is utilized to overcome the shortcomings in the prior art, wherein the supersaturated solution comprises antimony and/or indium as a solvent. Furthermore, a metallic zinc and/or magnesium dopant is added into the supersaturated solution to optimize the characters of the transparent layer. Therefore, this invention can provide a more efficient method for growing a transparent layer of a LED device, and the quality of the above-mentioned transparent layer can thereby be improved.

What is claimed is:  
     
         1 . A method for growing a transparent layer on a LED substrate, comprising: 
 providing a supersaturated solution, wherein said supersaturated solution comprises Sb as a solvent;    immersing the LED substrate into said supersaturated solution; and    growing the transparent layer onto the LED substrate.    
     
     
         2 . The method according to  claim 1 , wherein said supersaturated solution further comprises In as the solvent.  
     
     
         3 . The method according to  claim 1 , wherein said supersaturated solution further comprises a metallic dopant.  
     
     
         4 . The method according to  claim 3 , wherein said metallic dopant comprises Zn.  
     
     
         5 . The method according to  claim 4 , wherein said Zn is in an amount of 1/1000 to 1/10 by weight of the Sb.  
     
     
         6 . The method according to  claim 1 , wherein said step of immersing the LED substrate into said supersaturated solution is performed under a temperature of about 500° C. to 1000° C.  
     
     
         7 . A method for growing a transparent layer onto a LED substrate, comprising: 
 providing a supersaturated solution, wherein said supersaturated solution comprises Sb as a solvent;    immersing the LED substrate into said supersaturated solution;    growing a first transparent layer onto the LED substrate, wherein the first transparent layer has a first thickness;    immersing the LCD substrate with the first transparent layer into said supersaturated solution; and    growing a secondary transparent layer onto the first transparent layer on the LED substrate, wherein the secondary transparent layer has a secondary thickness.    
     
     
         8 . The method according to  claim 7 , wherein said supersaturated solution further comprises In as the solvent.  
     
     
         9 . The method according to  claim 7 , wherein said supersaturated solution further comprises a metallic dopant.  
     
     
         10 . The structure according to  claim 8 , wherein said metallic dopant comprises Zn.  
     
     
         11 . The method according to  claim 10 , wherein said Zn is in an amount of 1/1000 to 1/10 by weight of the Sb.  
     
     
         12 . The method according to  claim 7 , wherein said step of immersing the LED substrate into said supersaturated solution is performed under a temperature of about 500° C. to 1000° C.  
     
     
         13 . A method for growing a transparent layer onto a LED substrate, comprising: 
 providing a supersaturating solution, wherein said supersaturating solution comprises Sb and In as a solvent, GaP as a solute, and Zn as a dopant;    immersing the LED substrate into said supersaturated solution; and    growing the transparent layer onto the LED substrate.    
     
     
         14 . The method according to  claim 13 , wherein said Zn is in an amount of 1/1000 to 1/10 by weight of Sb of the supersaturated solution in the LPE process.  
     
     
         15 . The method according to  claim 13 , wherein said step of immersing the LED substrate into said supersaturated solution is performed under a temperature of about 500° C. to 1000° C.  
     
     
         16 . The method according to  claim 13 , wherein said growing the transparent layer comprises the following steps: 
 growing a first transparent layer onto the LED substrate;    immersing the LED substrate with said first transparent layer into said supersaturated solution; and    growing a secondary transparent layer onto said first transparent layer.    
     
     
         17 . A structure of a LED device, the structure comprising: 
 a LED substrate; and    a transparent layer on said LED substrate, wherein said transparent layer comprises a metallic Zn dopant.    
     
     
         18 . The structure according to  claim 17 , wherein said transparent layer is formed by LPE process.  
     
     
         19 . The structure according to  claim 17 , wherein said transparent layer is formed by LPE process utilizing a supersaturated solution comprising metallic antimony (Sb) and indium (In) as a solvent.  
     
     
         20 . The structure according to  claim 18 , wherein said Zn dopant is in an amount of 1/1000 to 1/10 by weight of a solvent of a supersaturated solution in the LPE process.  
     
     
         21 . The structure according to  claim 19 , wherein said Zn dopant is in an amount of 1/1000 to 1/10 by weight of Sb of the supersaturated solution in the LPE process.