US2004104434A1PendingUtilityA1

Thin film transistor liquid crystal display and method for manufacturing the same

Assignee: PRIME VIEW INT CO LTDPriority: Aug 24, 2001Filed: Nov 17, 2003Published: Jun 3, 2004
Est. expiryAug 24, 2021(expired)· nominal 20-yr term from priority
Inventors:Wen-Jian Lin
G02F 1/133553
41
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Claims

Abstract

There is provided a reflection type/transflection type thin film transistor liquid crystal display, including an insulating substrate, a thin film transistor formed on the insulating substrate, a transparent electrode made of indium-tin-oxide formed on the thin film transistor and electrically contacted with a source region and a drain region of the thin film transistor, and a curved conducting structure with an inclination of 3 to 20 degrees formed on the transparent electrode.

Claims

exact text as granted — not AI-modified
What is claimed is:  
     
         1 . A method of manufacturing a thin film transistor liquid crystal structure comprising the steps of: 
 (a) providing an insulating structure;    (b) forming a gate structure on a portion of said insulating substrate;    (c) forming an insulating layer on said gate structure and said insulating substrate;    (d) forming a first semiconductor structure and a second semiconductor structure on said insulating layer;    (e) forming a conducting layer on said insulating layer and said second semiconductor structure;    (f) etching said conducting layer to define a source region and a drain region and a curved structure with an inclination; and    (g) forming a transparent electrode on said curved structure, wherein said transparent electrode is electrically contacted with said source region and said drain region.    
     
     
         2 . The method of  claim 1  wherein an angle of said inclination is about 3 to 20 degrees.  
     
     
         3 . The method of  claim 1  wherein said conducting layer is formed from a metallic material.  
     
     
         4 . The method of  claim 1  said curved structure is an awl-shaped structure.  
     
     
         5 . The method of  claim 1  wherein said curved structure is a conical structure.  
     
     
         6 . The method of  claim 1  wherein said transparent electrode is formed from indium-tin-oxide.  
     
     
         7 . A thin film transistor liquid crystal display comprising: 
 an insulating substrate;    a thin film transistor formed on said insulating substrate;    a curved structure with an inclination formed on said insulating substrate; and    a transparent electrode layer formed on said curved structure.    
     
     
         8 . The thin film transistor liquid crystal display of  claim 7  wherein an angle of said inclination is about 3 to 20 degrees.  
     
     
         9 . The thin film transistor liquid crystal display of  claim 7  wherein said curved structure is an awl-shaped structure.  
     
     
         10 . The thin film transistor liquid display of  claim 7  wherein said curved structure is a conical structure.  
     
     
         11 . The thin film transistor liquid display of  claim 7  wherein said transparent electrode is formed from indium-tin-oxide.

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