US2004115696A1PendingUtilityA1

Affinity based self-assembly systems and devices for photonic and electronic applications

38
Assignee: NANOTRONICS INCPriority: Dec 6, 1996Filed: Jul 31, 2003Published: Jun 17, 2004
Est. expiryDec 6, 2016(expired)· nominal 20-yr term from priority
H10W 72/0198H10W 90/00H10P 95/11B82Y 30/00G02B 6/1225G06N 3/002C07K 1/047B01J 2219/00617C07K 1/045B01L 2400/0421C07K 1/04B01J 2219/00686G11B 7/24G11B 7/0052C40B 70/00B01J 2219/00497C40B 40/06C12Q 1/6837B01L 2200/12C07H 21/00C07B 2200/11G11C 13/0014B01J 2219/00605B01J 2219/00731G11C 13/0019B01J 19/0046C40B 40/10B01J 2219/00653C12Q 1/6816B01J 2219/00689B01J 2219/00529B01J 2219/00711G11B 7/00455B82B 3/00B01J 2219/00608C40B 40/08B01J 2219/00659B01L 2200/025B01J 2219/00585B01J 2219/00315B01L 3/502707B01L 3/502761G11B 7/0037G11B 7/005B01L 3/502715B01J 2219/00527G06N 3/123B01L 2300/0636B01J 2219/00596B82Y 10/00B01J 19/0093C40B 40/12G11B 7/0045G06N 3/061B01J 2219/00637B01L 2300/0645G11C 13/04B01J 2219/00536B82Y 20/00C12Q 1/6813B01L 3/5085G01N 33/54366C12Q 1/6818B01J 2219/00725B01J 2219/0059C40B 50/14B01J 2219/0072B01J 2219/00545B01J 2219/00317B01J 2219/00713B01J 2219/00612B82Y 5/00C40B 60/14B01L 2200/0663B01J 2219/00626B82Y 40/00B01J 2219/00707C12Q 1/6825G11B 7/244B01J 2219/00722H10K 10/701H10K 85/761
38
PatentIndex Score
0
Cited by
0
References
0
Claims

Abstract

This invention relates to methodologies and techniques that utilize programmable functionalized self-assembling nucleic acids, nucleic acid modified structures, and other selective affinity or binding moieties as building blocks for creating molecular electronic and photonic mechanisms; organizing, assembling, and interconnecting nanostructures, submicron- and micron-sized components onto silicon or other materials; organizing, assembling, and interconnecting nanostructures, submicron- and micron-sized components within perimeters of microelectronic or optoelectronic components/devices; and creating and manufacturing photonic and electronic structures, devices, and systems. In one aspect of this invention, a method for forming a multiple identity substrate material is provided comprising the steps of: providing a first affinity sequence at multiple locations on a support, providing a functionalized second affinity sequence, which reacts with the first affinity sequence, and has an unhybridized overhang sequence, and selectively cross-linking first affinity sequences and second affinity sequences.

Claims

exact text as granted — not AI-modified
We claim:  
     
         1 . A method for forming a multiple identity substrate material comprising the steps of: 
 providing a first affinity sequence at multiple locations on a support;    providing a functionalized second affinity sequence, which reacts with the first affinity sequence, and has an unhybridized overhang sequence; and    selectively cross-linking first affinity sequences and second affinity sequences.    
     
     
         2 . The method of  claim 1 , wherein the cross-linking is performed by UV irradiation of psoralen.  
     
     
         3 . The method of  claim 1 , wherein at least one location on the support with the first affinity sequence is masked to prevent cross-linking of the first and second affinity sequences.  
     
     
         4 . The method of  claim 1 , wherein the first affinity sequence is covalently attached to the support.  
     
     
         5 . The method of  claim 4 , wherein the support is reacted with aminopropyltriethoxysilane (APS) reagent before the first affinity sequence is attached.  
     
     
         6 . The method of  claim 4 , wherein the first affinity sequence is reacted to form a dialdehyde group at a terminal position of the first affinity sequence.  
     
     
         7 . The method of  claim 1 , further comprising the steps of: 
 dehybridizing the second affinity sequences that are not cross-linked;    providing a functionalized third affinity sequence, which reacts with the second affinity sequence, and has an unhybridized overhang sequence; and    selectively cross-linking the second and third affinity sequences.    
     
     
         8 . The method of  claim 8 , wherein the cross-linking is performed by UV irradiation with psoralen.  
     
     
         9 . The method of  claim 7 , wherein at least one location on the support is masked to prevent cross-linking of the second and third affinity sequences.  
     
     
         10 . The method of  claim 1 , further comprising providing a fourth affinity sequence that hybridizes with the first affinity sequence and includes a fluorescent label.  
     
     
         11 . The method of  claim 1 , further comprising providing a fifth affinity sequence that hybridizes with the second affinity sequence and includes a fluorescent label.  
     
     
         12 . The method of  claim 7 , further comprising a sixth affinity sequence that hybridizes with the third affinity sequence and includes a fluorescent label

Cited by (0)

No later patents cite this yet.

References (0)

No backward citations on record.