Method and device for treating a substrate

Abstract

The invention relates to a method and device for treating a substrate ( 20 ) in an arc vaporization device ( 10 ). An arc current of intensity I flows in an evacuated space ( 12 ) in the arc vaporization device between an anode and a metal target ( 14, 16, 18 ) which acts as a cathode. Said arc current is used to vaporize the target material and produce a metal ion density. The invention aims to treat the substrate ( 20 ) without causing undesirable heating thereof. As a result, the metal ion density per target ( 14, 16, 18 ) is set by at least partially covering the target, said density being effective for treating substrates.

1 . A method for treating such as etching a substrate ( 20 ) in an arc evaporation device ( 10 ) in which an arc current of an intensity I flows in an evacuated space ( 12 ) between an anode and a target ( 14 ,  16 ,  18 ,  40 ) comprising metal and acting as a cathode in order to evaporate target material and generate a metal ion density, 
 wherein    the metal ion density per target ( 14 ,  16 ,  18 ,  40 ) effective for treatment of the substrate ( 20 ) is achieved by at least partial covering of the target.    
     
     
         2 . Method according to  claim 1 , 
 wherein    the metal ion density per target ( 14 ,  16 ,  18 ,  40 ) is changed such that an apparent arc current intensity reduction is achieved to a value at which an unstable arc current flows between the anode and the cathode.    
     
     
         3 . Method according to  claim 1  or  claim 2 , 
 wherein  
 the metal ion density per target ( 14 ,  16 ,  18 ,  40 ) is reduced to an extent such that no inadmissible heating up of the substrate ( 20 ) occurs when the arc between anode and target remains stable.  
 
     
     
         4 . Method according to at least one of the previous claims, 
 wherein    the target ( 14 ,  16 ,  18 ,  40 ) is covered on the substrate side to the required extent by at least one cover ( 26 ,  28 ,  30 ) preferably in the form of a swivellable flap ( 32 ,  34 ,  42 ,  44 ).    
     
     
         5 . Method according to at least one of the previous claims, 
 wherein    the target ( 14 ,  16 ,  18 ,  40 ) is covered on the substrate side to the required extent by two swivellable flaps ( 32 ,  34 ,  42 ,  44 ).    
     
     
         6 . Method according to at least one of the previous claims, 
 wherein    the target ( 14 ,  16 ,  18 ) is covered on the substrate side using elements having openings adjustable and movable relative to each other, where the openings can be aligned to the required extent flush or offset to one another by adjustment of the elements.    
     
     
         7 . Device for treating such as etching a substrate in an arc evaporation device ( 10 ) and comprising a vacuum chamber ( 12 ) with an anode and with at least one cathode formed by a target ( 14 ,  16 , 18 ,  40 ) of metal, 
 wherein    the target ( 14 ,  16 ,  18 ,  40 ) is covered on the substrate side to the required extent by a cover ( 26 ,  28 ,  30 ,  32 ,  34 ,  42 ,  44 ).    
     
     
         8 . Device according to  claim 7 , 
 wherein    the cover ( 26 ,  28 ,  30 ) is designed as a single-wing or multiple-wing, in particular as a double-wing flap ( 32 ,  34 ,  42 ,  44 ).    
     
     
         9 . Device according to  claim 7  or  claim 8 . 
 wherein  
 the target ( 14 ,  16 ,  18 ) is covered on the substrate side using elements having openings adjustable/movable relative to each other, where the openings can be aligned to the required extent flush or offset to one another by adjustment of the elements.  
 
     
     
         10 . Use of the device with the target ( 14 ,  16 ,  18 ) covered and subjected to an arc for gettering of gas molecules.  
     
     
         11 . Use of the device for inert gas ion etching.