US2004150091A1PendingUtilityA1

Magnetic shielding for magnetic random access memory

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Priority: Feb 5, 2003Filed: Jul 30, 2003Published: Aug 5, 2004
Est. expiryFeb 5, 2023(expired)· nominal 20-yr term from priority
Inventors:Colin Stobbs
H10W 90/754H10W 90/734H10W 90/724H10W 90/701H10W 74/00H10W 72/5363H10W 72/951H10W 72/884H10W 72/551H10W 72/536H10W 72/075H10W 70/63H10W 42/20H10W 42/287H10W 42/284G11C 7/02G11C 7/24G11C 11/16B82Y 10/00H05K 9/0007G11C 11/15
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Claims

Abstract

A memory assembly comprises a substrate that incorporates magnetic shielding, a magnetic random access memory die supported by the substrate, and an encapsulation matrix that includes magnetic shielding that is disposed over the magnetic random access memory die.

Claims

exact text as granted — not AI-modified
What is claimed is:  
     
         1 . A memory assembly, comprising: 
 a substrate having magnetic shielding;    a magnetic random access memory die supported by the substrate; and    an encapsulation matrix having magnetic shielding and being disposed over the magnetic random access memory die.    
     
     
         2 . The memory assembly of  claim 1 , wherein the encapsulation matrix at least substantially encloses the magnetic random access memory die.  
     
     
         3 . The memory assembly of  claim 1 , wherein the substrate incorporates an internal layer of magnetic shielding.  
     
     
         4 . The memory assembly of  claim 1 , wherein the encapsulation matrix comprises magnetic shielding particles embedded within the encapsulation matrix.  
     
     
         5 . The memory assembly of  claim 1 , wherein the substrate comprises a circuit structure.  
     
     
         6 . The memory assembly of  claim 5 , wherein the encapsulation matrix is disposed over a plurality of magnetic random access memory dies.  
     
     
         7 . The memory assembly of  claim 1 , wherein the magnetic random access memory die is directly electrically connected to the substrate using a flip-chip configuration.  
     
     
         8 . The memory assembly of  claim 1 , wherein the magnetic random access memory die comprises input/outputs that are electrically connected to the substrate via one or more wire interbonds.  
     
     
         9 . The memory assembly of  claim 1 , wherein the memory assembly is configured for electrical connection to an additional substrate.  
     
     
         10 . The memory assembly of  claim 9 , wherein the electrical connection to the additional substrate occurs via a plurality of solder connections.  
     
     
         11 . An electronic device, comprising: 
 a magnetic memory assembly that comprises 
 a substrate;  
 a magnetic random access memory die supported by the substrate; and  
 an encapsulation matrix disposed over the magnetic random access memory die and supported by the substrate;  
   wherein both the substrate and the encapsulation matrix incorporate magnetic shielding.    
     
     
         12 . The electronic device of  claim 11 , wherein the magnetic memory assembly comprises a removable package.  
     
     
         13 . The electronic device of  claim 12 , wherein the removable package comprises a memory card.  
     
     
         14 . A method of manufacturing a magnetic random access memory assembly, the method comprising: 
 providing a substrate that incorporates magnetic shielding;    attaching a magnetic memory die to the substrate; and    applying a magnetically shielding material onto the magnetic random access memory die.    
     
     
         15 . The method of  claim 14 , wherein providing the substrate comprises internally incorporating the magnetic shielding in the substrate.  
     
     
         16 . The method of  claim 14 , wherein applying the magnetically shielding material comprises at least substantially enclosing the magnetic random access memory die in the material.  
     
     
         17 . The method of  claim 14 , wherein applying the material comprises injection molding the material onto the magnetic random access memory die.  
     
     
         18 . The method of  claim 14 , wherein applying the material comprises applying the material directly onto the magnetic random access memory die as a liquid or semi-liquid.  
     
     
         19 . The method of  claim 18 , further comprising curing the material.  
     
     
         20 . A memory, comprising 
 means for storing magnetic random access memory;    means for supporting a magnetic random access memory means;    means for encapsulating the magnetic random access memory means;    magnetic shielding means disposed in the supporting means; and    magnetic shielding means disposed in the encapsulating means.

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