Multiply-complexed one-dimensional structure, multiply-twisted helix, multiply-looped ring structure and functional material

Abstract

In a multiply-complexed one-dimensional structure having a hierarchical structure in which a linear structure as an element of a one-dimensional structure having a finite curvature is made of a thinner one-dimensional structure having a finite curvature, at least two layers of one-dimensional unit structures are bonded in at least one site. For example, in a multiply-twisted helix having a hierarchical structure in which a linear structure as an element of a spiral structure is made of a thinner spiral structure, at least two layers of the unit spiral structures are bonded in at least one site. Alternatively, in a multiply-looped ring structure having a hierarchical structure in which a linear structure as an element of a ring structure is made of a thinner ring structure, at least two layers of ring unit structures are bonded in at least one site.

1 . A multiply-complexed one-dimensional structure having a hierarchical structure in which a linear structure as an element of a one-dimensional structure having a finite curvature is made of a thinner one-dimensional structure having a finite curvature, comprising: 
 at least two layers of said one-dimensional structures bonded to each other in at least one site.    
     
     
         2 . The multiply-complexed one-dimensional structure according to  claim 1  wherein there is a fluctuation in bonding site between said at least two layers of one-dimensional structures.  
     
     
         3 . The multiply-complexed one-dimensional structure according to  claim 2  wherein said fluctuation appears in a predetermined pitch.  
     
     
         4 . The multiply-complexed one-dimensional structure according to  claim 1  wherein said fluctuation is introduced by removing or adding a bond between said at least two layers of one-dimensional structures.  
     
     
         5 . The multiply-complexed one-dimensional structure according to  claim 2  wherein phase transition occurring therein is controlled by controlling the bonding site between said at least two layers of one-dimensional structures.  
     
     
         6 . The multiply-complexed one-dimensional structure according to  claim 5  wherein the control of the bonding site between said at least two layers of one-dimensional structures is effected by parallel movement of the bond.  
     
     
         7 . The multiply-complexed one-dimensional structure according to  claim 1  wherein the bonding itself in said at least one site is made of a linear structure.  
     
     
         8 . The multiply-complexed one-dimensional structure according to  claim 7  wherein critical temperature for ferromagnetic transition occurring therein is regulated.  
     
     
         9 . The multiply-complexed one-dimensional structure according to  claim 7  wherein critical temperature for ferromagnetic phase transition is regulated by selecting an intensity of the bond made by said linear structure.  
     
     
         10 . The multiply-complexed one-dimensional structure according to  claim 7  wherein a quantum chaos occurring therein is controlled.  
     
     
         11 . The multiply-complexed one-dimensional structure according to  claim 7  wherein an electron state thereof is controlled.  
     
     
         12 . The multiply-complexed one-dimensional structure according to  claim 11  wherein metal-insulator phase transition is controlled.  
     
     
         13 . The multiply-complexed one-dimensional structure according to  claim 1  wherein the bonding itself in said at least one site is made via an independent element.  
     
     
         14 . The multiply-complexed one-dimensional structure according to  claim 13  wherein critical temperature for ferromagnetic transition occurring therein is regulated.  
     
     
         15 . The multiply-complexed one-dimensional structure according to  claim 13  wherein a physical property stable against small structural fluctuation is derived by a criticality obtained by the structure.  
     
     
         16 . The multiply-complexed one-dimensional structure according to  claim 13  wherein a quantum chaos occurring therein is controlled.  
     
     
         17 . The multiply-complexed one-dimensional structure according to  claim 13  wherein metal-insulator phase transition is controlled.  
     
     
         18 . The multiply-complexed one-dimensional structure according to  claim 13  wherein an electron state thereof is controlled.  
     
     
         19 . The multiply-complexed one-dimensional structure according to  claim 17  wherein metal-insulator phase transition is controlled.  
     
     
         20 . A multiply-complexed one-dimensional structure having a hierarchical structure in which a linear structure as an element of a one-dimensional structure having a finite curvature is made of a thinner one-dimensional structure having a finite curvature, characterized in: 
 exhibiting a nature regulated by setting a curvature in case the one-dimensional structure is made of thinner one-dimensional structures.    
     
     
         21 . The multiply-complexed one-dimensional structure according to  claim 20  wherein the curvature used when a one-dimensional structure of a first layer is made of a thinner one-dimensional structure of a second layer lower by one stage than said first layer is set to a value different from the curvature used when a one-dimensional structure of a third layer different from the first layer is made of a one-dimensional structure of a fourth layer lower by one stage than said third layer.  
     
     
         22 . The multiply-complexed one-dimensional structure according to  claim 20  wherein said curvature is set to vary in value depending on the difference in position in the one-dimensional structure of the layer.  
     
     
         23 . The multiply-complexed one-dimensional structure according to  claim 20  wherein there is a fluctuation in bonding site between said at least two layers of one-dimensional structures.  
     
     
         24 . The multiply-complexed one-dimensional structure according to  claim 23  wherein said fluctuation appears in a predetermined pitch.  
     
     
         25 . The multiply-complexed one-dimensional structure according to  claim 23  wherein said fluctuation is introduced by removing or adding a bond between said at least two layers of one-dimensional structures.  
     
     
         26 . The multiply-complexed one-dimensional structure according to  claim 20  wherein said curvature is variable.  
     
     
         27 . The multiply-complexed one-dimensional structure according to  claim 20  wherein said one-dimensional structure is formed of a linear structure having an atom or a cluster of atoms as an element thereof.  
     
     
         28 . The multiply-complexed one-dimensional structure according to  claim 23  wherein said one-dimensional structure is formed of a linear structure having an atom or a cluster of atoms as an element thereof, and said fluctuation is introduced by random absorption or desorption of molecules to or from said linear structure.  
     
     
         29 . The multiply-complexed one-dimensional structure according to  claim 20  wherein phase transition occurs.  
     
     
         30 . The multiply-complexed one-dimensional structure according to  claim 20  wherein metal-insulator phase transition occurs.  
     
     
         31 . The multiply-complexed one-dimensional structure according to  claim 20  characterized in including a portion in a metallic phase and a portion in an insulating phase.  
     
     
         32 . The multiply-complexed one-dimensional structure according to  claim 20  characterized in including a portion in a metallic phase and a portion in an insulating phase, said portion in an insulating phase being changeable to a metallic phase.  
     
     
         33 . The multiply-complexed one-dimensional structure according to  claim 20  wherein phase transition occurring therein is controlled by controlling the bonding site between said at least two layers of one-dimensional structures.  
     
     
         34 . The multiply-complexed one-dimensional structure according to  claim 33  wherein the control of the bonding site between said at least two layers of one-dimensional structures is effected by parallel movement of the bond.  
     
     
         35 . The multiply-complexed one-dimensional structure according to  claim 20  wherein ferromagnetic phase transition occurs.  
     
     
         36 . The multiply-complexed one-dimensional structure according to  claim 35  wherein critical temperature for ferromagnetic transition occurring therein is regulated by setting said curvature.  
     
     
         37 . A multiply-complexed one-dimensional structure having a hierarchical structure in which a linear structure as an element of a one-dimensional structure having a finite curvature is made of a thinner one-dimensional structure having a finite curvature, characterized in: 
 having a dimensionality regulated by setting a curvature in case the one-dimensional structure is made of thinner one-dimensional structures.    
     
     
         38 . The multiply-complexed one-dimensional structure according to  claim 37  wherein phase transition occurring therein is controlled by controlling the bonding site between said at least two layers of one-dimensional structures.  
     
     
         39 . The multiply-complexed one-dimensional structure according to  claim 38  wherein the control of the bonding site between said at least two layers of one-dimensional structures is effected by parallel movement of the bond.  
     
     
         40 . A multiply-complexed one-dimensional structure having a hierarchical structure in which a linear structure as an element of a one-dimensional structure having a finite curvature is made of a thinner one-dimensional structure having a finite curvature, having a random potential introduced therein, and at least two one-dimensional structures bonded in at least one site, characterized in: 
 a quantum chaos occurring therein being controlled by setting the intensity of said random potential, by setting the intensity of layer-to-layer bonding, by setting the curvature used when forming the one-dimensional structure from thinner one-dimensional structures, or by adding a magnetic impurity.    
     
     
         41 . A functional material including in at least a portion thereof a multiply-complexed one-dimensional structure having a hierarchical structure in which a linear structure as an element of a one-dimensional structure having a finite curvature is made of thinner one-dimensional structures having a finite curvature, characterized in: 
 at least two layers of said one-dimensional structures being bonded to each other in at least one site.    
     
     
         42 . The functional material according to  claim 41  wherein there is a fluctuation in bonding site between said at least two layers of one-dimensional structures.  
     
     
         43 . The functional material according to  claim 42  wherein said fluctuation appears in a predetermined pitch.  
     
     
         44 . The functional material according to  claim 42  wherein said fluctuation is introduced by removing or adding a bond between said at least two layers of one-dimensional structures.  
     
     
         45 . The functional material according to  claim 41  wherein phase transition occurring therein is controlled by controlling the bonding site between said at least two layers of one-dimensional structures.  
     
     
         46 . The functional material according to  claim 45  wherein the control of the bonding site between said at least two layers of one-dimensional structures is effected by parallel movement of the bond.  
     
     
         47 . The functional material according to  claim 41  wherein the bonding itself in said at least one site is made of a linear structure.  
     
     
         48 . The functional material according to  claim 47  wherein critical temperature for ferromagnetic transition occurring therein is regulated.  
     
     
         49 . The functional material according to  claim 47  wherein critical temperature for ferromagnetic phase transition is regulated by selecting an intensity of the bond made by said linear structure.  
     
     
         50 . The functional material according to  claim 47  wherein a quantum chaos occurring therein is controlled.  
     
     
         51 . The functional material according to  claim 47  wherein an electron state thereof is controlled.  
     
     
         52 . The functional material according to  claim 51  wherein metal-insulator phase transition is controlled.  
     
     
         53 . The functional material according to  claim 41  wherein the bonding in said at least one site is made via an independent element.  
     
     
         54 . The functional material according to  claim 53  wherein critical temperature for ferromagnetic transition occurring therein is regulated.  
     
     
         55 . The functional material according to  claim 53  wherein a physical property stable against small structural fluctuation is derived by a criticality obtained by the structure.  
     
     
         56 . The functional material according to  claim 53  wherein a quantum chaos occurring therein is controlled.  
     
     
         57 . The functional material according to  claim 53  wherein metal-insulator phase transition is controlled.  
     
     
         58 . The functional material according to  claim 53  wherein an electron state thereof is controlled.  
     
     
         59 . The functional material according to  claim 57  wherein metal-insulator phase transition is controlled.  
     
     
         60 . A functional material including in at least a portion thereof a multiply-complexed one-dimensional structure having a hierarchical structure in which a linear structure as an element of a one-dimensional structure having a finite curvature is made of thinner one-dimensional structures having a finite curvature, characterized in: 
 said multiply-complexed one-dimensional structure exhibiting a nature regulated by setting the curvature used when the one-dimensional structure is made of thinner one-dimensional structures.    
     
     
         61 . The functional material according to  claim 60  wherein the curvature used when a one-dimensional structure of a first layer is made of a thinner one-dimensional structure of a second layer lower by one stage than said first layer is set to a value different from the curvature used when a one-dimensional structure of a third layer different from the first layer is made of a one-dimensional structure of a fourth layer lower by one stage than said third layer.  
     
     
         62 . The functional material according to  claim 60  wherein said curvature is set to vary in value depending on the difference in position in the one-dimensional structure of the layer.  
     
     
         63 . The functional material according to  claim 60  wherein there is a fluctuation in bonding site between said at least two layers of one-dimensional structures.  
     
     
         64 . The functional material according to  claim 63  wherein said fluctuation appears in a predetermined pitch.  
     
     
         65 . The functional material according to  claim 63  wherein said fluctuation is introduced by removing or adding a bond between said at least two layers of one-dimensional structures.  
     
     
         66 . The functional material according to  claim 60  wherein said curvature is variable.  
     
     
         67 . The functional material according to  claim 60  wherein said one-dimensional structure is formed of a linear structure having an atom or a cluster of atoms as an element thereof.  
     
     
         68 . The functional material according to  claim 63  wherein said one-dimensional structure is formed of a linear structure having an atom or a cluster of atoms as an element thereof, and said fluctuation is introduced by random absorption or desorption of molecules to or from said linear structure.  
     
     
         69 . The functional material according to  claim 60  wherein phase transition occurs.  
     
     
         70 . The functional material according to  claim 60  wherein metal-insulator phase transition occurs.  
     
     
         71 . The functional material according to  claim 60  characterized in including a portion in a metallic phase and a portion in an insulating phase.  
     
     
         72 . The functional material according to  claim 60  characterized in including a portion in a metallic phase and a portion in an insulating phase, said portion in an insulating phase being changeable to a metallic phase.  
     
     
         73 . The functional material according to  claim 60  wherein phase transition occurring therein is controlled by controlling the bonding site between said at least two layers of one-dimensional structures.  
     
     
         74 . The functional material according to  claim 73  wherein the control of the bonding site between said at least two layers of one-dimensional structures is effected by parallel movement of the bond.  
     
     
         75 . The functional material according to  claim 60  wherein ferromagnetic phase transition occurs.  
     
     
         76 . The functional material according to  claim 75  wherein critical temperature for ferromagnetic transition occurring therein is regulated by setting said curvature.  
     
     
         77 . A functional material including in at least a portion thereof a multiply-complexed one-dimensional structure having a hierarchical structure in which a linear structure as an element of a one-dimensional structure having a finite curvature is made of thinner one-dimensional structures having a finite curvature, characterized in: 
 said multiply-complexed one-dimensional structure having a dimensionality regulated by setting a curvature in case the one-dimensional structure is made of thinner one-dimensional structures.    
     
     
         78 . The functional material according to  claim 77  wherein phase transition occurring therein is controlled by controlling the bonding site between said at least two layers of one-dimensional structures.  
     
     
         79 . The functional material according to  claim 78  wherein the control of the bonding site between said at least two layers of one-dimensional structures is effected by parallel movement of the bond.  
     
     
         80 . A multiply-twisted helix having a hierarchical structure in which a linear structure as an element of a spiral structure is made of thinner spiral structures, characterized in: 
 at least two layers of spiral structures being bonded in at least one site.    
     
     
         81 . The multiply-twisted helix according to  claim 80  wherein there is a fluctuation in bonding site between said at least two layers of spiral structures.  
     
     
         82 . The multiply-twisted helix according to  claim 81  wherein said fluctuation appears in a predetermined pitch.  
     
     
         83 . The multiply-twisted helix according to  claim 81  wherein said fluctuation is introduced by removing or adding a bond-between said at least two layers of spiral structures.  
     
     
         84 . The multiply-twisted helix according to  claim 83  wherein critical temperature for ferromagnetic phase transition occurring therein is regulated by the degree of said fluctuation.  
     
     
         85 . The multiply-twisted helix according to  claim 81  wherein phase transition occurring therein is controlled by controlling the bonding site between said at least two layers of spiral structures.  
     
     
         86 . The multiply-twisted helix according to  claim 85  wherein the control of the bonding site between said at least two layers of spiral structures is effected by parallel movement of the bond.  
     
     
         87 . The multiply-twisted helix according to  claim 86  wherein critical temperature for ferromagnetic transition occurring therein is regulated by parallel movement of the bond between said at least two layers of spiral structures.  
     
     
         88 . The multiply-twisted helix according to  claim 80  wherein the bonding itself in said at least one site is made of a linear structure.  
     
     
         89 . The multiply-twisted helix according to  claim 88  wherein critical temperature for ferromagnetic transition occurring therein is regulated.  
     
     
         90 . The multiply-twisted helix according to  claim 88  wherein critical temperature for ferromagnetic phase transition is regulated by selecting an intensity of the bond made by said linear structure.  
     
     
         91 . The multiply-twisted helix according to  claim 88  wherein a quantum chaos occurring therein is controlled.  
     
     
         92 . The multiply-twisted helix according to  claim 88  wherein an electron state thereof is controlled.  
     
     
         93 . The multiply-twisted helix according to  claim 92  wherein metal-insulator phase transition is controlled.  
     
     
         94 . The multiply-twisted helix according to  claim 80  wherein the bonding in said at least one site is made via an independent element.  
     
     
         95 . The multiply-twisted helix according to  claim 94  wherein critical temperature for ferromagnetic transition occurring therein is regulated.  
     
     
         96 . The multiply-twisted helix according to  claim 94  wherein a physical property stable against small structural fluctuation is derived by a criticality obtained by the structure.  
     
     
         97 . The multiply-twisted helix according to  claim 94  wherein a quantum chaos occurring therein is controlled.  
     
     
         98 . The multiply-twisted helix according to  claim 94  wherein metal-insulator phase transition is controlled.  
     
     
         99 . The multiply-twisted helix according to  claim 94  wherein an electron state thereof is controlled.  
     
     
         100 . The multiply-twisted helix according to  claim 98  wherein metal-insulator phase transition is controlled.  
     
     
         101 . A multiply-twisted helix having a hierarchical structure in which a linear structure as an element of a spiral structure is made of thinner spiral structures, characterized in: 
 exhibiting a nature regulated by setting a turn pitch in case the spiral structure is made of thinner spiral structures.    
     
     
         102 . The multiply-twisted helix according to  claim 101  wherein the turn pitch used when a spiral structure of a first layer is made of a thinner spiral structure of a second layer lower than one stage than said first layer is set to a value different from the turn pitch used when a spiral structure of a third layer different from said first layer is made of a thinner spiral structure of a fourth layer lower by one stage than said third layer.  
     
     
         103 . The multiply-twisted helix according to  claim 101  wherein said turn pitch is set to vary in value depending on the difference in position in the spiral structure of the layer.  
     
     
         104 . The multiply-twisted helix according to  claim 101  wherein there is a fluctuation in bonding site between said at least two layers of spiral structures.  
     
     
         105 . The multiply-twisted helix according to  claim 104  wherein said fluctuation appears in a predetermined pitch.  
     
     
         106 . The multiply-twisted helix according to  claim 104  wherein said fluctuation is introduced by removing or adding a bond between said at least two layers of spiral structures.  
     
     
         107 . The multiply-twisted helix according to  claim 106  wherein critical temperature for ferromagnetic transition occurring therein is regulated by the degree of said fluctuation.  
     
     
         108 . The multiply-twisted helix according to  claim 101  wherein said turn pitch is variable.  
     
     
         109 . The multiply-twisted helix according to  claim 101  wherein said spiral structure is formed of a linear structure having an atom or a cluster of atoms as an element thereof.  
     
     
         110 . The multiply-twisted helix according to  claim 104  wherein said spiral structure is formed of a linear structure having an atom or a cluster of atoms as an element thereof, and said fluctuation is introduced by random absorption or desorption of molecules to or from said linear structure.  
     
     
         111 . The multiply-twisted helix according to  claim 101  wherein phase transition occurs.  
     
     
         112 . The multiply-twisted helix according to  claim 101  wherein metal-insulator phase transition occurs.  
     
     
         113 . The multiply-twisted helix according to  claim 101  characterized in including a portion in a metallic phase and a portion in an insulating phase.  
     
     
         114 . The multiply-twisted helix according to  claim 101  characterized in including a portion in a metallic phase and a portion in an insulating phase, said portion in an insulating phase being changeable to a metallic phase.  
     
     
         115 . The multiply-twisted helix according to  claim 101  wherein phase transition occurring therein is controlled by controlling the bonding site between said at least two layers of spiral structures.  
     
     
         116 . The multiply-twisted helix according to  claim 115  wherein the control of the bonding site between said at least two layers of spiral structures is effected by parallel movement of the bond.  
     
     
         117 . The multiply-twisted helix according to  claim 101  wherein ferromagnetic phase transition occurs.  
     
     
         118 . The multiply-twisted helix according to  claim 101  wherein critical temperature for ferromagnetic transition occurring therein is regulated by setting said turn pitch.  
     
     
         119 . A multiply-twisted helix having a hierarchical structure in which a linear structure as an element of a spiral structure is made of thinner spiral structures, characterized in: 
 having a dimensionality regulated by setting a turn pitch in case the spiral structure is made of thinner spiral structures.    
     
     
         120 . The multiply-twisted helix according to  claim 119  wherein phase transition occurring therein is controlled by controlling the bonding site between said at least two layers of spiral structures.  
     
     
         121 . The multiply-twisted helix according to  claim 120  wherein the control of the bonding site between said at least two layers of spiral structures is effected by parallel movement of the bond.  
     
     
         122 . A multiply-twisted helix having a hierarchical structure in which a linear structure as an element of a spiral structure is made of a thinner spiral structure, having a random potential introduced therein, and at least two spiral structures bonded in at least one site, characterized in: 
 a quantum chaos occurring therein being controlled by setting the intensity of said random potential, by setting the intensity of layer-to-layer bonding, by setting the turn pitch used when forming the spiral structure from thinner spiral structures, or by adding a magnetic impurity.    
     
     
         123 . The multiply-twisted helix according to  claim 122  wherein a quantum chaos occurring therein is controlled by setting the intensity of layer-to-layer bonding.  
     
     
         124 . A multiply-twisted helix having a hierarchical structure in which a linear structure as an element of a spiral structure is made of a thinner spiral structure, and having at least two layers of spiral structures bonded in at least one site, characterized in: 
 the bonding performance between linear structures as elements of said spiral structure being controlled by a turn pitch in case of forming said spiral structure from thinner spiral structures, by the bonding force between said layers, or by a fluctuation in the bonding site between said at least two layers of spiral structures.    
     
     
         125 . A functional material including in at least a portion thereof a multiply-twisted helix having a hierarchical structure in which a linear structure as an element of a spiral structure is made of thinner spiral structures, characterized in: 
 at least two layers of spiral structures in said multiply-twisted helix being bonded in at least one site.    
     
     
         126 . The functional material according to  claim 125  wherein there is a fluctuation in bonding site between said at least two layers of spiral structures.  
     
     
         127 . The-functional material according to  claim 126  wherein said fluctuation appears in a predetermined pitch.  
     
     
         128 . The functional material according to  claim 126  wherein said fluctuation is introduced by removing or adding a bond between said at least two layers of spiral structures.  
     
     
         129 . The functional material according to  claim 125  wherein phase transition occurring therein is controlled by controlling the bonding site between said at least two layers of spiral structures.  
     
     
         130 . The functional material according to  claim 129  wherein the control of the bonding site between said at least two layers of spiral structures is effected by parallel movement of the bond.  
     
     
         131 . The functional material according to  claim 125  wherein the bonding itself in said at least one site is made of a linear structure.  
     
     
         132 . The functional material according to  claim 131  wherein critical temperature for ferromagnetic transition occurring therein is regulated.  
     
     
         133 . The functional material according to  claim 131  wherein critical temperature for ferromagnetic-phase transition is regulated by selecting an intensity of the bond made by said linear structure.  
     
     
         134 . The functional material according to  claim 131  wherein a quantum chaos occurring therein is controlled.  
     
     
         135 . The functional material according to  claim 131  wherein an electron state thereof is controlled.  
     
     
         136 . The functional material according to  claim 135  wherein metal-insulator phase transition is controlled.  
     
     
         137 . The functional material according to  claim 125  wherein the bonding in said at least one site is made via an independent element.  
     
     
         138 . The functional material according to  claim 137  wherein critical temperature for ferromagnetic transition occurring therein is regulated.  
     
     
         139 . The functional material according to  claim 137  wherein a physical property stable against small structural fluctuation is derived by a criticality obtained by the structure.  
     
     
         140 . The functional material according to  claim 137  wherein a quantum chaos occurring therein is controlled.  
     
     
         141 . The functional material according to  claim 137  wherein metal-insulator phase transition is controlled.  
     
     
         142 . The functional material according to  claim 137  wherein an electron state thereof is controlled.  
     
     
         143 . The functional material according to  claim 141  wherein metal-insulator phase transition is controlled.  
     
     
         144 . A functional material including in at least a part thereof a multiply-twisted helix having a hierarchical structure in which a linear structure as an element of a spiral structure is made of thinner spiral structures, characterized in: 
 said multiply-twisted helix exhibiting a nature regulated by setting a turn pitch produced when the spiral structure is made of thinner spiral structures.    
     
     
         145 . The functional material according to  claim 144  wherein the turn pitch used when a spiral structure of a first layer is made of a thinner spiral structure of a second layer lower than one stage than said first layer is set to a value different from the turn pitch used when a spiral structure of a third layer different from said first layer is made of a thinner spiral structure of a fourth layer lower by one stage than said third layer.  
     
     
         146 . The functional material according to  claim 144  wherein said turn pitch is set to vary in value depending on the difference in position in the spiral structure of the layer.  
     
     
         147 . The-functional material according to  claim 144  wherein there is a fluctuation in bonding site between said at least two layers of spiral structures.  
     
     
         148 . The functional material according to  claim 147  wherein said fluctuation appears in a predetermined pitch.  
     
     
         149 . The functional material according to  claim 147  wherein said fluctuation is introduced by removing or adding a bond between said at least two layers of spiral structures.  
     
     
         150 . The functional material according to  claim 144  wherein said turn pitch is variable.  
     
     
         151 . The functional material according to  claim 144  wherein said spiral structure is formed of a linear structure having an atom or a cluster of atoms as an element thereof.  
     
     
         152 . The functional material according to  claim 147  wherein said spiral structure is formed of a linear structure having an atom or a cluster of atoms as an element thereof, and said fluctuation is introduced by random absorption or desorption of molecules to or from said linear structure.  
     
     
         153 . The functional material according to  claim 144  wherein phase transition occurs.  
     
     
         154 . The functional material according to  claim 144  wherein metal-insulator phase transition occurs.  
     
     
         155 . The functional material according to  claim 144  characterized in including a portion in a metallic phase and a portion in an insulating phase.  
     
     
         156 . The functional material according to  claim 144  characterized in including a portion in a metallic phase and a portion in an insulating phase, said portion in an insulating phase being changeable to a metallic phase.  
     
     
         157 . The functional material according to  claim 144  wherein phase transition occurring therein is controlled by controlling the bonding site between said at least two layers of spiral structures.  
     
     
         158 . The functional material according to  claim 157  wherein the control of the bonding site between said at least two layers of spiral structures is effected by parallel movement of the bond.  
     
     
         159 . The functional material according to  claim 144  wherein ferromagnetic phase transition occurs.  
     
     
         160 . The functional material according to  claim 144  wherein critical temperature for ferromagnetic transition occurring therein is regulated by setting said turn pitch.  
     
     
         161 . A functional material including in at least a part thereof a multiply-twisted helix having a hierarchical structure in which a linear structure as an element of a spiral structure is made of thinner spiral structures, characterized in: 
 said multiply-twisted helix having a dimensionality regulated by setting a turn pitch in case the spiral structure is made of thinner spiral structures.    
     
     
         162 . The functional material according to  claim 161  wherein phase transition occurring therein is controlled by controlling the bonding site between said at least two layers of spiral structures.  
     
     
         163 . The functional material according to  claim 162  wherein the control of the bonding site between said at least two layers of spiral structures is effected by parallel movement of the bond.  
     
     
         164 . A multiply-looped ring structure having a hierarchical structure in which an annular structure as an element of a ring structure is made of a thinner ring structure, characterized in: 
 at least two layers of ring structures being bonded in at least one site.    
     
     
         165 . The multiply-looped ring structure according to  claim 164  wherein there is a fluctuation in bonding site between said at least two layers of ring structures.  
     
     
         166 . The multiply-looped ring structure according to  claim 165  wherein said fluctuation appears in a predetermined pitch.  
     
     
         167 . The multiply-looped ring structure according to  claim 165  wherein said fluctuation is introduced by removing or adding a bond between said at least two layers of ring structures.  
     
     
         168 . The multiply-looped ring structure according to  claim 164  wherein phase transition occurring therein is controlled by controlling the bonding site between said at least two layers of ring structures.  
     
     
         169 . The multiply-looped ring structure according to  claim 168  wherein the control of the bonding site between said at least two layers of ring structures is effected by parallel movement of the bond.  
     
     
         170 . The multiply-looped ring structure according to  claim 169  wherein the bonding itself in said at least one site is made of a linear structure.  
     
     
         171 . The multiply-looped ring structure according to  claim 170  wherein critical temperature for ferromagnetic transition occurring therein is regulated.  
     
     
         172 . The multiply-looped ring structure according to  claim 170  wherein critical temperature for ferromagnetic phase transition is regulated by selecting an intensity of the bond made by said linear structure.  
     
     
         173 . The multiply-looped ring structure according to  claim 170  wherein a quantum chaos occurring therein is controlled.  
     
     
         174 . The multiply-looped ring structure according to  claim 170  wherein an electron state thereof is controlled.  
     
     
         175 . The multiply-looped ring structure according to  claim 170  wherein metal-insulator phase transition is controlled.  
     
     
         176 . The multiply-looped ring structure according to  claim 169  wherein the bonding itself in said at least one site is made via an independent element.  
     
     
         177 . The multiply-looped ring structure according to  claim 176  wherein critical temperature for ferromagnetic transition occurring therein is regulated.  
     
     
         178 . The multiply-looped ring structure according to  claim 176  wherein a physical property stable against small structural fluctuation is derived by a criticality obtained by the structure.  
     
     
         179 . The multiply-looped ring structure according to  claim 176  wherein a quantum chaos occurring therein is controlled.  
     
     
         180 . The multiply-looped ring structure according to  claim 176  wherein metal-insulator phase transition is controlled.  
     
     
         181 . The multiply-looped ring structure according to  claim 176  wherein an electron state thereof is controlled.  
     
     
         182 . The multiply-looped ring structure according to  claim 180  wherein metal-insulator phase transition is controlled.  
     
     
         183 . A multiply-looped ring structure having a hierarchical structure in which a linear structure as an element of a ring structure is made of a thinner ring structure, characterized in: 
 exhibiting a nature regulated by setting a number of elements in case the ring structure is made of thinner ring structures.    
     
     
         184 . The multiply-looped ring structure according to  claim 183  wherein the number of elements used when a ring structure of a first layer is made of a thinner ring structure of a second layer lower by one stage than said first layer is set to a value different from the number of elements used when a ring structure of a third layer different from the first layer is made of a ring structure of a fourth layer lower by one stage than said third layer.  
     
     
         185 . The multiply-looped ring structure according to  claim 183  wherein said number of elements is set to vary in value depending on the difference in position in the ring structure of the layer.  
     
     
         186 . The multiply-looped ring structure according to  claim 183  wherein there is a fluctuation in bonding site between said at least two layers of ring structures.  
     
     
         187 . The multiply-looped ring structure according to  claim 186  wherein said fluctuation appears in a predetermined pitch.  
     
     
         188 . The multiply-looped ring structure according to  claim 186  wherein said fluctuation is introduced by removing or adding a bond between said at least two layers of ring structures.  
     
     
         189 . The multiply-looped ring structure according to  claim 183  wherein said number of elements is variable.  
     
     
         190 . The multiply-looped ring structure according to  claim 183  wherein said ring structure is formed of a linear structure having an atom or a cluster of atoms as an element thereof.  
     
     
         191 . The multiply-looped ring structure according to  claim 186  wherein said ring structure is formed of a linear structure having an atom or a cluster of atoms as an element thereof, and said fluctuation is introduced by random absorption or desorption of molecules to or from said linear structure.  
     
     
         192 . The multiply-looped ring structure according to  claim 183  wherein phase transition occurs.  
     
     
         193 . The multiply-looped ring structure according to  claim 183  wherein metal-insulator phase transition occurs.  
     
     
         194 . The multiply-looped ring structure according to  claim 183  characterized in including a portion in a metallic phase and a portion in an insulating phase.  
     
     
         195 . The multiply-looped ring structure according to  claim 183  characterized in including a portion in a metallic phase and a portion in an insulating phase, said portion in an insulating phase being changeable to a metallic phase.  
     
     
         196 . The multiply-looped ring structure according to  claim 183  wherein phase transition occurring therein is controlled by controlling the bonding site between said at least two layers of ring structures.  
     
     
         197 . The multiply-looped ring structure according to  claim 196  wherein the control of the bonding site between said at least two layers of ring structures is effected by parallel movement of the bond.  
     
     
         198 . The multiply-looped ring structure according to  claim 183  wherein ferromagnetic phase transition occurs.  
     
     
         199 . The multiply-looped ring structure according to  claim 183  wherein critical temperature for ferromagnetic transition occurring therein is regulated by setting said number of elements.  
     
     
         200 . A multiply-looped ring structure having a hierarchical structure in which a linear structure as an element of a ring structure is made of a thinner ring structure, characterized in: 
 having a dimensionality regulated by setting a number of elements in case the ring structure is made of thinner ring structures.    
     
     
         201 . The multiply-looped ring structure according to  claim 200  wherein phase transition occurring therein is controlled by controlling the bonding site between said at least two layers of ring structures.  
     
     
         202 . The multiply-looped ring structure according to  claim 201  wherein the control of the bonding site between said at least two layers of ring structures is effected by parallel movement of the bond.  
     
     
         203 . A multiply-looped ring structure having a hierarchical structure in which a linear structure as an element of a ring structure is made of a thinner ring, having a random potential introduced therein, and at least two ring structures bonded in at least one site, characterized in: 
 a quantum chaos occurring therein being controlled by-setting the intensity of said random potential, by setting the intensity of layer-to-layer bonding, by setting the number elements used when forming the ring structure from thinner ring structures, or by adding a magnetic impurity.    
     
     
         204 . A functional material including in at least a portion thereof a multiply-looped ring structure having a hierarchical structure in which a linear structure as an element of a ring structure is made of thinner ring structures, characterized in: 
 at least two layers of said ring structures being bonded to each other in at least one site.    
     
     
         205 . The functional material according to  claim 204  wherein there is a fluctuation in bonding site between said at least two layers of ring structures.  
     
     
         206 . The functional material according to  claim 205  wherein said fluctuation appears in a predetermined pitch.  
     
     
         207 . The functional material according to  claim 205  wherein said fluctuation is introduced by removing or adding a bond between said at least two layers of ring structures.  
     
     
         208 . The functional material according to  claim 205  wherein phase transition occurring therein is controlled by controlling the bonding site between said at least two layers of ring structures.  
     
     
         209 . The functional material according to  claim 208  wherein the control of the bonding site between said at least two layers of ring structures is effected by parallel movement of the bond.  
     
     
         210 . The functional material according to  claim 204  wherein the bonding itself in said at least one site is made of a linear structure.  
     
     
         211 . The functional material according to  claim 210  wherein critical temperature for ferromagnetic transition occurring therein is regulated.  
     
     
         212 . The functional material according to  claim 210  wherein critical temperature for ferromagnetic phase transition is regulated by selecting an intensity of the bond made by said linear structure.  
     
     
         213 . The functional material according to  claim 210  wherein a quantum chaos occurring therein is controlled.  
     
     
         214 . The functional material according to  claim 210  wherein an electron state thereof is controlled.  
     
     
         215 . The functional material according to  claim 214  wherein metal-insulator phase transition is controlled.  
     
     
         216 . The functional material according to  claim 204  wherein the bonding in said at least one site is made via an independent element.  
     
     
         217 . The functional material according to  claim 216  wherein critical temperature for ferromagnetic transition occurring therein is regulated.  
     
     
         218 . The functional material according to  claim 216  wherein a physical property stable against small structural fluctuation is derived by a criticality obtained by the structure.  
     
     
         219 . The functional material according to  claim 216  wherein a quantum chaos occurring therein is controlled.  
     
     
         220 . The functional material according to  claim 216  wherein metal-insulator phase transition is controlled.  
     
     
         221 . The functional material according to  claim 216  wherein an electron state thereof is controlled.  
     
     
         222 . The functional material according to  claim 220  wherein metal-insulator phase transition is controlled.  
     
     
         223 . A functional material including in at least a portion thereof a multiply-looped ring structure having a hierarchical structure in which a linear structure as an element of a ring structure is made of thinner ring structures, characterized in: 
 said multiply-looped ring structure exhibiting a nature regulated by setting the number of elements used when the ring structure is made of thinner ring structures.    
     
     
         224 . The functional material according to  claim 223  wherein the number of elements used when a ring structure of a first layer is made of a thinner ring structure of a second layer lower by one stage than said first layer is set to a value different from the number of elements used when a ring structure of a third layer different from the first layer is made of a ring structure of a fourth layer lower by one stage than said third layer.  
     
     
         225 . The functional material according to  claim 223  wherein said number of elements is set to vary in value depending on the difference in position in the ring structure of the layer.  
     
     
         226 . The functional material according to  claim 223  wherein there is a fluctuation in bonding site between said at least two layers of ring structures.  
     
     
         227 . The functional material according to  claim 226  wherein said fluctuation appears in a predetermined pitch.  
     
     
         228 . The functional material according to  claim 226  wherein said fluctuation is introduced by removing or adding a bond between said at least two layers of ring structures.  
     
     
         229 . The functional material according to  claim 223  wherein said number of elements is variable.  
     
     
         230 . The functional material according to  claim 223  wherein said ring structure is formed of a linear structure having an atom or a cluster of atoms as an element thereof.  
     
     
         231 . The functional material according to  claim 226  wherein said ring structure is formed of a linear structure having an atom or a cluster of atoms as an element thereof, and said fluctuation is introduced by random absorption or desorption of molecules to or from said linear structure.  
     
     
         232 . The functional material according to  claim 223  wherein phase transition occurs.  
     
     
         233 . The functional material according to  claim 223  wherein metal-insulator phase transition occurs.  
     
     
         234 . The functional material according to  claim 223  characterized in including a portion in a metallic phase and a portion in an insulating phase.  
     
     
         235 . The functional material according to  claim 223  characterized in including a portion in a metallic phase and a portion in an insulating phase, said portion in an insulating phase being changeable to a metallic phase.  
     
     
         236 . The functional material according to  claim 223  wherein phase transition occurring therein is controlled by controlling the bonding site between said at least two layers of ring structures.  
     
     
         237 . The functional material according to  claim 236  wherein the control of the bonding site between said at least two layers of ring structures is effected by parallel movement of the bond.  
     
     
         238 . The functional material according to  claim 223  wherein ferromagnetic phase transition occurs.  
     
     
         239 . The functional material according to  claim 238  wherein critical temperature for ferromagnetic transition occurring therein is regulated by setting said number of elements.  
     
     
         240 . A functional material including in at least a portion thereof a multiply-loop ring structure having a hierarchical structure in which a linear structure as an element of a ring structure is made of thinner ring structures, characterized in: 
 said multiply-looped ring structure having a dimensionality regulated by setting a number of elements in case the ring structure is made of thinner ring structures.    
     
     
         241 . The functional material according to  claim 240  wherein phase transition occurring therein is controlled by controlling the bonding site between said at least two layers of ring structures.  
     
     
         242 . The functional material according to  claim 241  wherein the control of the bonding site between said at least two layers of ring structures is effected by parallel movement of the bond.