US2004178173A1PendingUtilityA1

Method for laminating a material layer onto a transparent substrate

51
Assignee: IND TECH RES INSTPriority: Mar 13, 2003Filed: Jun 10, 2003Published: Sep 16, 2004
Est. expiryMar 13, 2023(expired)· nominal 20-yr term from priority
B32B 37/00B32B 2315/08B32B 2311/02B32B 2310/0825Y10S438/977C03C 27/046H10W 72/073
51
PatentIndex Score
0
Cited by
0
References
0
Claims

Abstract

A method for laminating a material layer onto a transparent substrate. The method includes the steps of: providing a transparent substrate having an amorphous silicon layer formed thereon; forming an infrared absorbent metal layer on the material layer; inverting the material layer to laminate the metal layer onto the amorphous silicon layer; and exposing the metal layer and the amorphous silicon layer to infrared light to cause a metal silicide producing reaction and thus laminate the material layer and the transparent substrate.

Claims

exact text as granted — not AI-modified
What is claimed is:  
     
         1 . A method for laminating a material layer onto a transparent substrate, comprising: 
 providing a transparent substrate having an amorphous silicon layer formed thereon;    forming an infrared absorbent metal layer on the material layer;    inverting the material layer to laminate the metal layer onto the amorphous silicon layer; and    exposing the metal layer and the amorphous silicon layer to infrared light to cause a metal silicide producing reaction and thus laminate the material layer and the transparent substrate.    
     
     
         2 . The method as claimed in  claim 1 , further comprising separating the material layer and the transparent substrate by etching or laser cutting.  
     
     
         3 . The method as claimed in  claim 1 , wherein the transparent substrate is glass, quartz, synthetic quartz, LiNbO 3  or LiTaO 3 .  
     
     
         4 . The method as claimed in  claim 1 , wherein the material layer is s metal, ceramic, nanomaterial, or composite material.  
     
     
         5 . The method as claimed in  claim 2 , wherein the etching is wet etching.  
     
     
         6 . The method as claimed in  claim 5 , wherein the solution for wet etching is any solution that removes metal silicide.

Cited by (0)

No later patents cite this yet.

References (0)

No backward citations on record.