US2004179147A1PendingUtilityA1

Display device and manufacturing method of the same

Assignee: HITACHI DISPLAYS LTDPriority: Mar 14, 2003Filed: Feb 13, 2004Published: Sep 16, 2004
Est. expiryMar 14, 2023(expired)· nominal 20-yr term from priority
G02F 1/136259
38
PatentIndex Score
0
Cited by
0
References
0
Claims

Abstract

Even when a protective film, an insulation film or the like is present above a film to be corrected, only a defect of the film to be corrected which is arranged below such an upper-layer film is corrected without damaging the upper-layer film. In a display device forming a display region where a plurality of films including an insulation film, a semiconductor film and a conductive film are patterned in a given pattern and stacked on a substrate, at a point of time that at least one correction portion out of a correction portion which separates a short-circuit defect, a correction portion which connects an opening defect, a correction portion which removes a standard deviation defect, and a correction portion which separates a standard deviation defect of the pattern is corrected, at least one upper-layer film is present above a film to be corrected at the correction portion and the correction is applied to the film to be corrected while leaving the upper-layer film as it is.

Claims

exact text as granted — not AI-modified
What is claimed is:  
     
         1 . A display device forming a display region where a plurality of films including an insulation film, a semiconductor film and a conductive film are patterned in a given pattern and stacked on a substrate, wherein 
 at a point of time that at least one correction portion out of a correction portion which separates a short-circuit defect, a correction portion which connects an opening defect, a correction portion which removes a standard deviation defect, and a correction portion which separates a standard deviation defect of the pattern is corrected, at least one upper-layer film is present above a film to be corrected at the correction portion and the correction is applied to the film to be corrected while leaving the upper-layer film as it is.    
     
     
         2 . A display device according to  claim 1 , wherein the correction of the correction portion is performed by the irradiation of laser beams.  
     
     
         3 . A display device according to  claim 2 , wherein the correction of the correction portion is performed by irradiating the laser beams from a side opposite to the substrate.  
     
     
         4 . A display device according to  claim 2 , wherein the laser beams are irradiated to the same portion by dividing the laser beams plural times.  
     
     
         5 . A display device according to  claim 1 , wherein the upper-layer film above the film to be corrected includes at least either one of an insulation film and a transparent conductive film.  
     
     
         6 . A display device according to  claim 1 , wherein a display of the display region is performed normally due to the correction of the correcting portions.  
     
     
         7 . A manufacturing method of a display device comprising: 
 a film forming step in which a plurality of films including an insulation film, a semiconductor film and a conductive film are stacked onto a substrate; and    a defect portion correcting step in which at least one correction out of a short-circuit defect portion separation correction which separates a short-circuit defect, an open defect portion connection correction which performs a connection of an open defect, a standard deviation defect portion removal correction which performs a removal of a standard deviation defect, and a standard deviation defect portion separation correction which performs a separation of a standard deviation defect portion generated in the formed film is performed, wherein    at a point of correction time of the defect portion correction step, at least one upper-layer film is present above a film to be corrected at the correction portion and the correction is applied to the film to be corrected while leaving the upper-layer film as it is.    
     
     
         8 . A manufacturing method of a display device according to  claim 7 , wherein the correction is performed by irradiating laser beams.  
     
     
         9 . A manufacturing method of a display device according to  claim 8 , wherein the laser beams are irradiated to the substrate from a side opposite to the substrate.  
     
     
         10 . A manufacturing method of a display device according to  claim 8 , wherein the laser beams are irradiated to the same portion by dividing the laser beams plural times.  
     
     
         11 . A manufacturing method of a display device according to  claim 10 , wherein the laser beams are irradiated to the same portion by dividing the laser beams at least 10 times.  
     
     
         12 . A manufacturing method of a display device according to  claim 10 , wherein an irradiation interval of the laser beams is equal to or more than 0.3 seconds.  
     
     
         13 . A manufacturing method of a display device according to  claim 8 , wherein a wavelength of the laser beams is set to a wavelength which allows the laser beams to be more easily absorbed in the film to be corrected than the upper-layer film.  
     
     
         14 . A manufacturing method of a display device according to  claim 8 , wherein when the film to be corrected is an amorphous silicon semiconductor film, a wavelength of the laser beams is set to 250 nm to 360 nm.  
     
     
         15 . A manufacturing method of a display device according to  claim 8 , wherein an output of the laser beams is set to 0.02 W/cm 2  or less.  
     
     
         16 . A manufacturing method of a display device according to  claim 15 , wherein the laser beams to be irradiated to the same portion are irradiated by dividing the laser beams 10 or more times.  
     
     
         17 . A manufacturing method of a display device according to  claim 7 , wherein the upper-layer film includes at least either one of an insulation film and a transparent conductive film.  
     
     
         18 . A manufacturing method of a display device according to  claim 7 , wherein the semiconductor film is an amorphous semiconductor film and the amorphous semiconductor film is subjected to the separation correction or the removal correction.  
     
     
         19 . A manufacturing method of a display device according to  claim 7 , wherein an activated layer of a thin film transistor which has a source electrode and a drain electrode is constituted by the semiconductor film, the semiconductor film includes an intrinsic semiconductor film and a contact film formed over the intrinsic semiconductor film, wherein the separation correction of a defect which short-circuits the source electrode and the drain electrode through the contact film is performed by removing the contact film present between the source electrode and the drain electrode together with a portion of the intrinsic semiconductor film.  
     
     
         20 . A manufacturing method of a display device according to  claim 7 , wherein the conductive film is at least one of a scanning signal line, a video signal line and a pixel electrode, and the separation correction is at least one of corrections of a short-circuit defect between the scanning signal lines, a short-circuit defect between the video signal lines and a short-circuit defect between the pixel electrodes.  
     
     
         21 . A manufacturing method of a display device according to  claim 20 , wherein the pixel electrode is a transparent conductive film.  
     
     
         22 . A manufacturing method of a display device according to  claim 7 , wherein a normal display is performed by the correction.

Join the waitlist — get patent alerts

Track US2004179147A1 — get alerts on status changes and closely related new filings.

We store only your email — no account needed. See our privacy policy.