Substrate processing apparatus

Abstract

The substrate processing apparatus is provided with a gas-liquid mixing nozzle for generating a process liquid mist by mixing a liquid and a pressurized gas, to discharge the process liquid mist to a substrate at high speeds. The liquid may be remover liquid, intermediate rinse liquid or deionized water. The reaction products which having been generated on the substrate in etching process is removed at high speeds with the flow of the mist, whereby the quality of the process is improved.

1 . An apparatus for removing residuary pollution from a substrate, said apparatus comprising: 
 a) a spin mechanism for holding and rotating said substrate; and    b) a liquid supply mechanism for supplying at least one liquid onto said substrate being rotated, comprising    b-1) a mist supply mechanism for mixing a gas with a processing liquid to generate mist and supplying said mist onto said substrate being rotated in a removing process for removing said residuary pollution from said substrate.    
     
     
         2 . The apparatus in accordance with  claim 1 , wherein 
 said mist supply mechanism comprising    a mixing part having a mixing room for mixing gas with said processing liquid to generate said mist, and    a nozzle having a tapered channel for receiving said mist from said mixing room and supplying said mist onto said substrate, said channel having a tapered part being tapered-off toward a discharge end of said channel.    
     
     
         3 . The apparatus in accordance with  claim 2 , wherein 
 said liquid supply mechanism is operable to serially supply onto said substrate with:    1) a remover liquid for removing said residuary pollution from said substrate being rotated, and    2) a deionized water supplied to said substrate being rotated, and    said processing liquid is said deionized water.    
     
     
         4 . The apparatus in accordance with  claim 2 , wherein 
 said liquid supply mechanism is operable to serially supply onto said substrate with:    1) remover liquid for removing said residuary pollution from said substrate being rotated, and    2) deionized water supplied to said substrate being rotated, and    said processing liquid is said remover liquid.    
     
     
         5 . The apparatus in accordance with  claim 2 , wherein 
 said liquid supply mechanism is operable to serially supply onto said substrate with:    1) remover liquid for removing said residuary pollution from said substrate being rotated,    2) intermediate rinse for removing said remover liquid from said substrate being rotated, and    3) a deionized water supplied to said substrate being rotated, and    said processing liquid is said intermediate rinse.    
     
     
         6 . The apparatus in accordance with  claim 2 , wherein 
 said nozzle supplies said mist onto said substrate at a direction inclined from a normal direction of a major surface of said substrate.    
     
     
         7 . The apparatus in accordance with  claim 3 , wherein 
 said mist supply mechanism further comprising    a straight part having an even cross section for receiving said mist from said tapered channel to discharge said mist onto substrate.    
     
     
         8 . The apparatus in accordance with  claim 2 , wherein 
 said mixing room has a smooth inner wall.    
     
     
         9 . The apparatus in accordance with  claim 2 , wherein 
 said mixing part further comprising    a tube through which said gas is introduced into said mixing room, and    a ring-shaped space enclosing said tube, through which said processing liquid is introduced into said mixing room.    
     
     
         10 . The apparatus in accordance with  claim 1 , wherein 
 said mist supply mechanism comprising:    a gas discharge mechanism for discharging said gas into an open space on said substrate; and    a processing liquid discharge mechanism for discharging said processing liquid into said gas in said open space to generate said mist to be applied to said substrate.    
     
     
         11 . The apparatus in accordance with  claim 10 , wherein 
 said gas and said processing liquid collide with each other in said open space to generate said mist.    
     
     
         12 . The apparatus in accordance with  claim 10 , wherein 
 one of said gas and said processing liquid is discharged into said free space as a flow, and    the other of said gas and said processing liquid is discharged into said flow.    
     
     
         13 . The apparatus in accordance with  claim 10 , wherein 
 said gas is discharged in a first direction, and    said processing liquid is discharged in a second direction,    wherein an angle between said first and second directions is within zero to 110 degree.    
     
     
         14 . The apparatus in accordance with  claim 1 , wherein 
 said mist supply mechanism comprising:    a processing liquid discharge mechanism having a first discharging outlet for discharging said processing liquid into an open space; and    a gas discharge mechanism having a second discharging outlet for discharging said gas into said processing liquid in said open space just after said processing liquid is discharged from said first discharging outlet, to thereby convert said processing liquid into liquid drops constituting said mist.    
     
     
         15 . The apparatus in accordance with  claim 14 , further comprising: 
 c) a controller for controlling said mist supply mechanism, comprising    a first control element for starting discharge of said gas, and    a second control element for starting discharge of said processing liquid when a first predetermined time is elapsed after discharge of said gas is started.    
     
     
         16 . The apparatus in accordance with  claim 15 , wherein 
 said controller further comprising    a third control element for stopping the discharge of said processing liquid, and    a fourth control element for stopping the discharge of said gas when a second predetermined time is elapsed after discharge of said processing liquid is stopped.    
     
     
         17 . An apparatus for removing residuary pollution from a substrate, comprising: 
 a) a spin mechanism for holding and rotating said substrate; and    b) a remover liquid supply unit for supplying remover liquid onto said substrate being rotated to remove said residuary pollution from said substrate,    c) a deionized water supply unit for supplying a deionized water onto said substrate being rotated, and    d) at least one ultrasonic oscillator for applying ultrasonic wave to at least one of said remover liquid and said deionized water.    
     
     
         18 . The apparatus in accordance with  claim 17 , wherein 
 said residuary pollution is caused in a dry-etching process in which a thin film formed on said substrate is removed through a dry-etching step using a resist film as a mask.    
     
     
         19 . The apparatus in accordance with  claim 17 , wherein 
 origin of said residuary pollution is a resist used in an etching process of a thin film formed on said substrate.    
     
     
         20 . The apparatus in accordance with  claim 17 , wherein 
 said residuary pollution is an organic matter.    
     
     
         21 . The apparatus in accordance with  claim 17 , wherein 
 said remover liquid supply unit supplies said remover liquid onto said substrate in a direction inclined from a normal direction of a major surface of said substrate.    
     
     
         22 . The apparatus in accordance with  claim 21 , further comprising: 
 e) a driving mechanism for moving said remover liquid supply unit to scan said substrate with a reach point of said remover liquid on said substrate along a path connecting a rotation center of said substrate and a rotation circle defined by an edge of said substrate being rotated.    
     
     
         23 . The apparatus in accordance with  claim 17 , wherein 
 said deionized water supply unit supplies said deionized water onto said substrate in a direction inclined from a normal direction of a major surface of said substrate.    
     
     
         24 . The apparatus in accordance with  claim 17 , further comprising: 
 e) a driving mechanism for moving said deionized water supply unit to scanning said substrate with a reach point of said deionized water on said substrate along a path connecting a rotation center of said substrate and a rotation circle defined by an edge of said substrate being rotated.    
     
     
         25 . An apparatus for removing residuary pollution from a substrate, comprising: 
 a) a spin mechanism for holding and rotating said substrate; and    b) a remover liquid supply unit for supplying remover liquid onto said substrate being rotated to remove said residuary pollution from said substrate,    c) an intermediate rinse remover liquid supply unit for supplying intermediate rinse onto said substrate being rotated to remove said remover liquid from said substrate,    d) a deionized water supply unit for supplying a deionized water onto said substrate being rotated, and    e) at least one ultrasonic oscillator for applying ultrasonic wave to at least one of said remover liquid, said intermediate rinse and said deionized water.    
     
     
         26 . The apparatus in accordance with  claim 25 , wherein 
 said intermediate rinse supply unit supplies said intermediate rinse onto said substrate in a direction inclined from a normal direction of a major surface of said substrate.    
     
     
         27 . The apparatus in accordance with  claim 26 , further comprising: 
 f) a driving mechanism for moving said intermediate rinse supply unit to scanning said substrate with an arrival point of said intermediate rinse on said substrate along a path connecting a rotation center of said substrate and a rotation circle defined by an edge of said substrate being rotated.    
     
     
         28 . An apparatus for removing residuary pollution caused in an dry-etching process from a substrate, said apparatus comprising: 
 a) a spin mechanism for holding and rotating said substrate; and    b) a remover liquid supply unit for supplying remover liquid onto said substrate being rotated to remove said residuary pollution from said substrate while scanning said substrate with said remover liquid.    
     
     
         29 . The apparatus in accordance with  claim 28 , wherein 
 said remover liquid supply unit comprising    b-1) a remover liquid discharging unit for discharging said remover liquid onto said substrate being rotated, and    b-2) a driving unit for moving said remover liquid discharging unit to scan said substrate with said remover liquid.    
     
     
         30 . The apparatus in accordance with  claim 29 , wherein 
 said driving unit moves said remover liquid emission unit such that an arrival point of said remover liquid on said substrate is moved along a path connecting a rotation center of said substrate and a rotation circle defined by an edge of said substrate being rotated.    
     
     
         31 . The apparatus in accordance with  claim 30 , wherein 
 said path is an arc connecting said rotation center of said substrate and said rotation circle.    
     
     
         32 . The apparatus in accordance with  claim 29 , wherein 
 a temperature of said remover liquid supplied from said remover liquid supply unit is controlled.    
     
     
         33 . The apparatus in accordance with  claim 32 , wherein 
 said remover liquid discharging unit comprises    a temperature controller for controlling a temperature of said remover liquid, and    a transmission mechanism for transmitting said remover liquid whose temperature is controlled to said substrate.    
     
     
         34 . The apparatus in accordance with  claim 29 , further comprising: 
 a ultrasonic wave is applied to said remover liquid.    
     
     
         35 . The apparatus in accordance with  claim 34 , wherein 
 said ultrasonic wave is applied to said remover liquid before said remover liquid is applied onto said substrate.    
     
     
         36 . The apparatus in accordance with  claim 35 , wherein 
 said remover liquid emission unit comprises an ultrasonic oscillator contacting said remover liquid to apply said ultrasonic wave to said remover liquid.    
     
     
         37 . An apparatus for removing residuary pollution caused in an dry-etching process from a substrate, said apparatus comprising: 
 a) a spin mechanism for holding and rotating said substrate; and    b) a remover liquid supply mechanism comprising:    b-1) a pressure generator for applying pressure to a remover liquid which is effective for removing said chemical residuary pollution to generate a pressured remover liquid, and    b-2) a nozzle for discharging said pressured remover liquid onto said substrate being rotated, and    c) a deionized water supply mechanism for supplying deionized water onto said substrate being rotated.    
     
     
         38 . The apparatus in accordance with  claim 37 , wherein 
 said pressure generator comprising    a cylinder having a closed end and defining a room therein, and    a piston driven by a piston driver to move in said cylinder to apply pressure to said remover liquid introduced from an inlet into said room and send said pressured remover liquid from an outflow port.    
     
     
         39 . An apparatus for removing chemical residuary pollution caused in an dry-etching process from a substrate, said apparatus comprising: 
 a) a spin mechanism for holding and rotating said substrate; and    b) a remover liquid supply unit for supplying remover liquid onto said substrate being rotated to remove said chemical residuary pollution from said substrate being rotated, and    c) a deionized water supply mechanism comprising:    c-1) a pressured generator for applying pressure to deionized water to generate a pressured remover liquid, and    c-2) a nozzle for discharging said pressured deionized water onto said substrate being rotated.    
     
     
         40 . An apparatus for removing chemical residuary pollution caused in an dry-etching process from a substrate, said apparatus comprising: 
 a) a spin mechanism for holding and rotating said substrate; and    b) a remover liquid supply unit for supplying remover liquid onto said substrate being rotated to remove said chemical residuary pollution from said substrate being rotated,    c) an intermediate rinse supply mechanism comprising:    c-1) a pressured generator for applying pressure to intermediate rinse to generate a pressured intermediate rinse, and    c-2) a nozzle for discharging said pressured intermediate rinse onto said substrate being rotated, and    d) a deionized water supply mechanism for supplying said deionized water onto said substrate being rotated.    
     
     
         41 . An apparatus for removing residuary pollution caused in an dry-etching process from a substrate, said apparatus comprising: 
 a) a remover liquid supply unit comprising a remover liquid discharging unit for discharging remover liquid onto said substrate being rotated to remove said residuary pollution from said substrate,    b) a temperature controller for controlling a temperature of said remover liquid,    c) a driver for moving said remover liquid discharging unit between    a processing position from which said remover liquid is discharged onto said substrate, and    a stand-by position from which said remover liquid is discharged to a position defined out of said substrate, and    d) a controller for controlling said driver and said remover liquid discharging unit such that    said remover liquid discharging unit is located at said stand-by position and discharges said remover liquid to said position defined out of said substrate, and    said remover liquid discharging unit is then moved to said processing position and discharges said remover liquid onto said substrate.    
     
     
         42 . The apparatus in accordance with  claim 41 , further comprising: 
 e) a collection mechanism for collecting said remover liquid having been discharged from said remover liquid discharging unit from said stand-by position.    
     
     
         43 . The apparatus in accordance with  claim 42 , wherein 
 said controller controls said remover liquid supply unit to intermittently discharge said remover liquid during said remover liquid discharging unit is located at said stand-by position.    
     
     
         44 . An apparatus for removing residuary pollution caused in an dry-etching process from a substrate, said apparatus comprising: 
 a) a remover liquid supply unit comprising a remover liquid discharging unit for discharging remover liquid onto said substrate being rotated to remove said residuary pollution from said substrate,    b) a temperature controller for controlling a temperature of said remover liquid,    c) a driver for moving said remover liquid emission unit between    a processing position from which said remover liquid is discharged onto said substrate, and    a stand-by position from which said remover liquid is discharged to a position defined out of said substrate, and    d) a controller for controlling said remover liquid discharging unit to discharge said remover liquid to said position defined out of said substrate during said remover liquid discharging unit is located at said stand-by position.    
     
     
         45 . The apparatus in accordance with  claim 44 , further comprising: 
 e) a collection mechanism for collecting said remover liquid having been discharged from said remover liquid discharging unit from said stand-by position.    
     
     
         46 . The apparatus in accordance with  claim 45 , wherein 
 said controller controls said remover liquid supply unit to intermittently discharge said remover liquid during said remover liquid discharging unit is located at said stand-by position.    
     
     
         47 . An apparatus for removing residuary pollution from a substrate, comprising: 
 a) a spin mechanism for holding and rotating said substrate;    b) a remover liquid supply unit for supplying remover liquid onto said substrate being rotated to remove said residuary pollution from said substrate;    c) a brush unit for brushing said substrate;    d) a deionized water supply unit for supplying a deionized water onto said substrate being rotated; and    d) a controller comprising    a first control procedure element for controlling said remover liquid supply unit to supply said remover liquid onto said substrate being rotated,    a second control procedure element for controlling said brush unit to brush said substrate after said remover liquid is supplied onto said substrate being rotated,    a third control procedure element for controlling said deionized water supply unit to supply said deionized water onto said substrate being rotated after said substrate is brushed, and    a fourth control procedure element for controlling said spin mechanism to rotate said substrate to disperse said deionized water from said substrate.    
     
     
         48 . The apparatus in accordance with  claim 47 , wherein 
 said controller further comprises    a fifth control procedure element for controlling said spin mechanism to rotate said substrate to disperse said remover liquid from said substrate after said remover liquid is supplied onto said substrate and before said substrate is brushed.    
     
     
         49 . The apparatus in accordance with  claim 48 , further comprising 
 e) an intermediate rinse supply unit for supplying said intermediate rinse onto said substrate being rotated,    wherein said controller further comprises    a sixth control procedure element for controlling said intermediate rinse supply unit to supply said intermediate rinse onto said substrate being rotated before said remover liquid is dispersed from said substrate and before said substrate is brushed.    
     
     
         50 . An apparatus for removing residuary pollution from a substrate, comprising: 
 a) a spin mechanism for holding and rotating said substrate; and    b) a processing liquid supply unit comprising a nozzle for discharging a spreading current of a processing liquid toward said substrate.    
     
     
         51 . The apparatus in accordance with  claim 50 , wherein 
 said processing liquid is a remover liquid for removing said residuary pollution from said substrate.    
     
     
         52 . The apparatus in accordance with  claim 50 , wherein 
 said processing liquid is rinse for rinsing a remover liquid having been applied onto said substrate to remove said residuary pollution from said substrate.    
     
     
         53 . The apparatus in accordance with  claim 50 , wherein 
 a cross section of said spreading current on said substrate is substantially an ellipse including a rotation center of said substrate and at least one point on a rotation circle defined by an edge of said substrate being rotated.    
     
     
         54 . The apparatus in accordance with  claim 50 , wherein 
 said nozzle discharges said spreading current from a location above a rotation center of said substrate, and    a cross section of said spreading current on said substrate is substantially an ellipse having a major axis longer than a diameter of said substrate.    
     
     
         55 . An apparatus for removing residuary pollution from a substrate, comprising: 
 a) a spin mechanism for holding and rotating said substrate;    b) a remover liquid supply unit for supplying remover liquid onto said substrate being rotated to remove said residuary pollution from said substrate,    c) a deionized water supply unit for supplying a deionized water onto said substrate being rotated; and    d) a controller comprising    a first control procedure element for controlling said remover liquid supply unit to supply said remover liquid onto said substrate being rotated,    a second control procedure element for controlling said spin mechanism to rotate said substrate to disperse said remover liquid from said substrate, and    a third control procedure element for controlling said deionized water supply unit to supply said deionized water onto said substrate being rotated after said remover liquid is dispersed.    
     
     
         56 . The apparatus in accordance with  claim 55 , further comprising 
 e) an intermediate rinse supply unit for supplying said intermediate rinse onto said substrate being rotated,    wherein said controller further comprises    a fourth control procedure element for controlling said intermediate rinse supply unit to supply said intermediate rinse onto said substrate being rotated before said remover liquid is dispersed from said substrate and before said deionized water is supplied.    
     
     
         57 . The apparatus in accordance with  claim 55 , wherein 
 said residuary pollution is caused in a dry-etching process in which a thin film formed on said substrate is removed through a dry-etching step using a resist film as a mask.    
     
     
         58 . The apparatus in accordance with  claim 57 , wherein 
 said residuary pollution is a polymer, and    said remover liquid is organic alkali liquid orinorganic acid.    
     
     
         59 . The apparatus in accordance with  claim 58 , wherein 
 said remover liquid is selected from a group consisting of dimethylformamide, dimethyl sulfoxide and hydroxylamine.    
     
     
         60 . The apparatus in accordance with  claim 58 , wherein 
 said remover liquid is selected from a group consisting of hydrofluoric acid and phosphoric acid.    
     
     
         61 . The apparatus in accordance with  claim 55 , wherein 
 said residuary pollution is an organic matter.    
     
     
         62 . The apparatus in accordance with  claim 61 , wherein 
 said organic matter is a polymer.    
     
     
         63 . The apparatus in accordance with  claim 61 , wherein 
 said remover liquid is one of    a first remover liquid including organic amine,    a second remover liquid including ammonium bifluoride, and    an inorganic remover liquid.