Integrated circuits with multiple low dielectric-constant inter-metal dielectrics

Abstract

The invention provides processes for the formation of structures in microelectronic devices such as integrated circuit devices. More particularly, the invention relates to the formation of vias, interconnect metallization and wiring lines using multiple low dielectric-constant inter-metal dielectrics. The processes use two or more dissimilar low-k dielectrics for the inter-metal dielectrics of Cu-based dual damascene backends of integrated circuits. The use of both organic and inorganic low-k dielectrics offers advantages due to the significantly different plasma etch characteristics of the two kinds of dielectrics. One dielectric serves as the etchstop in etching the other dielectric so that no additional etchstop layer is required. Exceptional performance is achieved due to the lower parasitic capacitance resulting from the use of low-k dielectrics. An integrated circuit structure is formed having a substrate; an inorganic layer on the substrate which is composed of a pattern of metal lines on the substrate and an inorganic dielectric on the substrate between the metal lines; and an organic layer on the inorganic layer which is composed of an organic dielectric having metal filled vias therethrough which connect to the metal lines of the inorganic layer.

1 . An integrated circuit structure which comprises a substrate and 
 (a) an inorganic layer on the substrate which comprises a pattern of metal lines on the substrate and an inorganic dielectric on the substrate between the metal lines; and    (b) an organic layer on the inorganic layer which comprises an organic dielectric having metal filled vias therethrough which connect to the metal lines of the inorganic layer.    
     
     
         2 . The integrated circuit structure of  claim 1  which comprises 
 (c) an additional inorganic layer on the organic layer which comprises a pattern of additional metal lines on the organic layer and an inorganic dielectric on the organic layer between the additional metal lines; and  
 (d) an additional organic layer on the additional inorganic layer which comprises an organic dielectric having metal filled vias therethrough which connect to the additional metal lines of the additional inorganic layer.  
 
     
     
         3 . The integrated circuit structure of  claim 2  which comprises one or more further alternating inorganic layers (c) and organic layers (d) on the additional inorganic layer (c) and organic layer (d).  
     
     
         4 . The integrated circuit structure of  claim 2  further comprising an inorganic dielectric layer on the organic layer between the vias and under the additional metal lines of the additional inorganic layer; and an organic dielectric on the inorganic dielectric layer between the additional metal lines of the additional inorganic layer.  
     
     
         5 . The integrated circuit structure of  claim 3  further comprising an inorganic dielectric layer on each alternating organic layer (d) between the vias and under the additional metal lines of the alternating inorganic layer; and an organic dielectric on the inorganic dielectric layer between the additional metal lines of the additional inorganic layer.  
     
     
         6 . The integrated circuit structure of  claim 1  wherein the metal lines and vias have a barrier metal on one or more edges thereof.  
     
     
         7 . An integrated circuit structure produced according to a process which comprises 
 (a) providing a substrate which comprises a pattern of metal lines on the substrate and a dielectric on the substrate between the metal lines;    (b) depositing an organic dielectric layer on the substrate;    (c) depositing an inorganic dielectric layer on the organic dielectric layer;    (d) etching a pattern of vias through the inorganic dielectric layer;    (e) etching a pattern of vias through the organic dielectric layer which correspond to the pattern of vias through the inorganic dielectric layer;    (f) applying a photoresist to the top of the inorganic dielectric layer and filling the vias in the organic dielectric layer and the inorganic dielectric layer with photoresist;    (g) imagewise removing a portion of the photoresist from the top of the inorganic dielectric layer; and removing a portion and leaving a portion of the photoresist through a thickness of the inorganic dielectric layer;    (h) removing part of the inorganic dielectric layer underlying the portions of the photoresist removed from the top of the inorganic dielectric layer to form trenches in the inorganic dielectric layer;    (i) removing the balance of the photoresist from the top of the inorganic dielectric layer and from the vias;    (j) filling the vias in the organic dielectric and the trenches in the inorganic dielectric with a metal.    
     
     
         8 . The integrated circuit structure produced according to  claim 7  wherein steps (b) through (j) are repeated at least once on the previously formed integrated circuit structure.  
     
     
         9 - 10 . (Canceled)  
     
     
         11 . An integrated circuit structure produced according to a process which comprises 
 (a) providing a substrate, which comprises a pattern of metal lines on the substrate and a dielectric on the substrate between the metal lines;    (b) depositing an organic via level dielectric on the substrate;    (c) depositing an thin inorganic dielectric layer on the organic via level dielectric;    (d) imagewise patterning and removing a portion of the thin inorganic dielectric layer thus defining vias through the thin inorganic dielectric layer;    (e) depositing a thin organic dielectric etchstop material layer on the thin inorganic dielectric layer and filling the vias in the thin inorganic dielectric layer with the organic dielectric material;    (f) depositing a metal level inorganic dielectric layer on the organic dielectric etchstop layer;    (g) imagewise patterning and removing a portion of the metal level inorganic dielectric layer down to the organic dielectric etchstop material layer to form trenches in the metal level inorganic dielectric layer;    (h) removing the portion of the organic dielectric etchstop material layer underlying the corresponding removed portion of the metal level inorganic dielectric to form trenches therein, and removing the organic etchstop material from the vias in the thin inorganic dielectric layer;    (i) removing the portion of the organic via level dielectric layer underlying the thin inorganic dielectric layer thus forming vias through the organic via level dielectric layer down to the metal lines;    (j) filling the vias in the via level organic dielectric layer and the thin inorganic dielectric layer, and trenches in the organic dielectric etchstop layer and metal level inorganic dielectric layer with a metal.    
     
     
         12 . The integrated circuit structure produced according to  claim 11  wherein steps (b) through (j) are repeated at least once on the previously formed integrated circuit structure.  
     
     
         13 - 14 . (Canceled)  
     
     
         15 . An integrated circuit structure produced according to a process which comprises 
 (a) providing a substrate, which comprises a pattern of metal lines on the substrate and a dielectric on the substrate between the metal lines;    (b) depositing an organic via level dielectric layer on the substrate;    (c) depositing an thin inorganic dielectric layer on the organic via level dielectric;    (d) depositing a thin organic dielectric etchstop material layer on the thin inorganic dielectric layer;    (e) depositing a metal level inorganic dielectric layer on the organic dielectric etchstop layer;    (f) imagewise patterning and removing a portion of the metal level inorganic dielectric layer down to the organic dielectric etchstop material layer to form vias in the metal level inorganic dielectric layer;    (g) removing the portion of the organic dielectric etchstop material layer underlying the corresponding removed portions of the metal level inorganic dielectric layer to form vias in the organic dielectric etchstop material layer;    (h) removing the portion of the thin inorganic dielectric layer underlying the corresponding removed portions of the organic dielectric etchstop material layer to form vias in the thin inorganic dielectric layer;    (i) covering the top of the metal level inorganic dielectric layer with a photoresist and filling the vias in the metal level inorganic dielectric layer, the organic dielectric etchstop material layer and the thin inorganic dielectric layer with photoresist;    (j) imagewise patterning and removing a portion of the photoresist from the top of the metal level inorganic dielectric layer; and removing a portion and leaving a portion of the photoresist through a thickness of the metal level inorganic dielectric layer;    (k) removing part of the metal level inorganic dielectric layer underlying the portions of the photoresist removed from the top of the inorganic dielectric layer to form trenches in the metal level inorganic dielectric layer;    (l) removing the balance of the photoresist from the top of the metal level inorganic dielectric layer and from the vias; and removing the portion of the organic dielectric etchstop material layer underlying the trenches until the thin inorganic dielectric layer is reached;    (m) removing the portion of the organic via level dielectric layer underlying the vias in the thin inorganic dielectric layer;    (n) filling the vias in the via level organic dielectric layer and the thin inorganic dielectric layer, and trenches in the organic dielectric etchstop layer and metal level inorganic dielectric layer with a metal.    
     
     
         16 . The integrated circuit structure produced according to  claim 15  wherein steps (b) through (n) are repeated at least once on the previously formed integrated circuit structure.  
     
     
         17 - 18 . (Canceled)  
     
     
         19 . An integrated circuit structure produced according to a process which comprises 
 (a) providing a substrate, which comprises a pattern of metal lines on the substrate and a dielectric on the substrate between the metal lines;    (b) depositing an organic via level dielectric layer on the substrate;    (c) depositing an thin inorganic dielectric layer on the organic via level dielectric    (d) depositing a thin organic dielectric etchstop material layer on the thin inorganic dielectric layer;    (e) depositing a metal level inorganic dielectric layer on the organic dielectric etchstop layer;    (f) imagewise patterning and removing a portion of the metal level inorganic dielectric layer down to the organic dielectric etchstop material layer to form vias in the metal level inorganic dielectric layer;    (g) removing the portion of the organic dielectric etchstop material layer underlying the corresponding removed portions of the metal level inorganic dielectric layer to form vias in the organic dielectric etchstop material layer;    (h) removing the portion of the thin inorganic dielectric layer underlying the corresponding removed portions of the organic dielectric etchstop material layer to form vias in the thin inorganic dielectric layer;    (i) removing the portion of the organic via level dielectric layer underlying the corresponding removed portions of the thin inorganic dielectric layer to form vias in the organic via level dielectric layer;    (j) covering the top of the metal level inorganic dielectric layer with a photoresist and filling the vias in the metal level inorganic dielectric layer, the organic dielectric etchstop material layer, the thin inorganic dielectric layer and the organic via level dielectric layer with photoresist;    (k) imagewise patterning and removing a portion of the photoresist from the top of the inorganic dielectric layer; and removing a portion and leaving a portion of the photoresist through a thickness of the metal level inorganic dielectric layer;    (l) removing part of the metal level inorganic dielectric layer underlying the portions of the photoresist removed from the top of the inorganic dielectric layer to form trenches in the metal level inorganic dielectric layer;    (m) removing the balance of the photoresist from the top of the metal level inorganic dielectric layer and from the vias; and removing the portion of the organic dielectric etchstop material layer underlying the trenches until the thin inorganic dielectric layer is reached;    (n) filling the vias in the via level organic dielectric layer and the thin inorganic dielectric layer, and trenches in the organic dielectric etchstop layer and metal level inorganic dielectric layer with a metal.    
     
     
         20 . The integrated circuit structure produced according to  claim 19  wherein steps (b) through (n) are repeated at least once on the previously formed integrated circuit structure.  
     
     
         21 - 31 . (Canceled)  
     
     
         32 . The integrated circuit structure of  claim 1  wherein the organic layer comprises a dielectric selected from the group consisting of alkoxysilane polymers, organic siloxanes, hydroorganosiloxanes, hydrogenmethylsilsesquioxane, hydrogenethylsilsesquioxane, hydrogenpropylsilsesquioxane, hydrogenbutylsilsesquioxane, hydrogentert-butylsilsesquioxane and hydrogenphenylsilsesquioxane, methylated siloxane polymers; polymers having the formulae [(HSiO 1.5 ) x O y (RSiO 1.5 ) z ] n , [(HSiO 1.5 ) x (RSiO 1.5 ) y ] n  and [(HSiO 1.5 ) x O y (RSiO 1.5 ) z ] n  wherein x=about 6 to about 20, y=1 to about 3, z=about 6 to about 20, n=1 to about 4,000, and each R is independently C 1  to C 8  alkyl or C 6  to C 12  aryl; 
 organic silicon containing polymers having the formulae  
 [H—SiO 1.5 ] n [R—SiO 1.5 ] m , [H 0.4 —SiO 1.5-1.8 ] n [R 0.4-1.0 —SiO 1.5-1.8 ] m , [H 0-1.0 —SiO 1.5-2.0 ] n [R—SiO 1.5 ] m , [H—SiO 1.5 ] x [R—SiO 1.5 ] y [SiO 2 ] z ,  
 wherein R is selected from substituted and unsubstituted straight chain and branched alkyl groups, cycloalkyl groups, substituted and unsubstituted aryl groups, and mixtures thereof; the sum of n and m, or the sum or x, y and z is from about 8 to about 5000, and m and y are selected such that carbon containing substituents are present in an amount of less than about 40 Mole percent;  
 organic silicon containing polymers having the formulae:  
 [HSiO 1.5 ] n [RSiO 1.5 ] m , [H 0.4-1.0 SiO 1.5-1.8 ] n [R 0.4-1.0 SiO 1.5-1.8 ] m , [H 0-1.0 SiO 1.5-2.0 ] n [RSiO 1.5 ] m ,  
 wherein the sum of n and m is from about 8 to about 5000 and m is selected such that the carbon containing substituent is present in an amount of from about 40 mole percent or greater; and  
 [HSiO 1.5 ] x [RSiO 1.5 ] y [SiO 2 ] z ;  
 wherein the sum of x, y and z is from about 8 to about 5000 and y is selected such that the carbon containing substituent is present in an amount of about 40 mole % or greater;  
 and wherein R is selected from substituted and unsubstituted straight chain and branched alkyl groups, cycloalkyl groups, substituted and unsubstituted aryl groups, and mixtures thereof, and mixtures thereof; and  
 wherein the inorganic layer comprises an inorganic dielectric selected from the group consisting of hydrogensiloxanes, inorganic hydrogensilsesquioxanes and combinations thereof; and wherein the hydrogensiloxanes have the formula [(HSiO 1.5 ) n O y ] n , and the hydrogensilsesquioxanes have the formula (HSiO 1.5 ) n , wherein x=about 6 to about 20, y=1 to about 3, and n=1 to about 4,000.  
 
     
     
         33 . The integrated circuit structure of  claim 7  wherein the organic dielectric layer comprises an organic dielectric selected from the group consisting of alkoxysilane polymers, organic siloxanes, hydroorganosiloxanes, hydrogenmethylsilsesquioxane, hydrogenethylsilsesquioxane, hydrogenpropylsilsesquioxane, hydrogenbutylsilsesquioxane, hydrogentert-butylsilsesquioxane and hydrogenphenylsilsesquioxane, methylated siloxane polymers; polymers having the formulae [(HSiO 1.5 ) x O y (RSiO 1.5 ) z ] n , [(HSiO 1.5 ) x (RSiO 1.5 ) y ] n  and [(HSiO 1.5 ) x O y (RSiO 1.5 ) z ] n  wherein x=about 6 to about 20, y=1 to about 3, z=about 6 to about 20, n=1 to about 4,000, and each R is independently C 1  to C 8  alkyl or C 6  to C 12  aryl; 
 organic silicon containing polymers having the formulae  
 [H—SiO 1.5 ] n [R—SiO 1.5 ] m , [H 0.4 —SiO 1.5-1.8 ] n [R 0.4-1.0 —SiO 1.5-1.8 ] m , [H 0-1.0 —SiO 1.5-2.0 ] n [R—SiO 1.5 ] m , [H—SiO 1.5 ] x [R—SiO 1.5 ] y [SiO 2 ] z ,  
 wherein R is selected from substituted and unsubstituted straight chain and branched alkyl groups, cycloalkyl groups, substituted and unsubstituted aryl groups, and mixtures thereof; the sum of n and m, or the sum or x, y and z is from about 8 to about 5000, and m and y are selected such that carbon containing substituents are present in an amount of less than about 40 Mole percent;  
 organic silicon containing polymers having the formulae:  
 [HSiO 1.5 ] n [RSiO 1.5 ] m , [H 0.4-1.0 SiO 1.5-1.8 ] n [R 0.4-1.0 SiO 1.5-1.8]   m , [H 0-1.0 SiO 1.5-2.0 ] n [RSiO 1.5 ] m ,  
 wherein the sum of n and m is from about 8 to about 5000 and m is selected such that the carbon containing substituent is present in an amount of from about 40 mole percent or greater; and  
 [HSiO 1.5 ] x [RSiO 1.5 ] y [SiO 2 ] z ;  
 wherein the sum of x, y and z is from about 8 to about 5000 and y is selected such that the carbon containing substituent is present in an amount of about 40 mole % or greater;  
 and wherein R is selected from substituted and unsubstituted straight chain and branched alkyl groups, cycloalkyl groups, substituted and unsubstituted aryl groups, and mixtures thereof, and mixtures thereof; and  
 wherein the inorganic dielectric layer comprises an inorganic dielectric selected from the group consisting of hydrogensiloxanes, inorganic hydrogensilsesquioxanes and combinations thereof; and wherein the hydrogensiloxanes have the formula [(HSiO 1.5 ) x O y ] n , and the hydrogensilsesquioxanes have the formula (HSiO 1.5 ) n , wherein x=about 6 to about 20, y=1 to about 3, and n=1 to about 4,000.  
 
     
     
         34 . The integrated circuit structure of  claim 11  wherein the organic via level dielectric comprises an organic dielectric selected from the group consisting of alkoxysilane polymers, organic siloxanes, hydroorganosiloxanes, hydrogenmethylsilsesquioxane, hydrogenethylsilsesquioxane, hydrogenpropylsilsesquioxane, hydrogenbutylsilsesquioxane, hydrogentert-butylsilsesquioxane and hydrogenphenylsilsesquioxane, methylated siloxane polymers; 
 polymers having the formulae [(HSiO 1.5 ) x O y (RSiO 1.5 ) z ] n , [(HSiO 1.5 ) x (RSiO 1.5 ) y ] n  and [(HSiO 1.5 ) x O y (RSiO 1.5 ) z ] n  wherein x=about 6 to about 20, y=1 to about 3, z=about 6 to about 20, n=1 to about 4,000, and each R is independently C 1 to C   8  alkyl or C 6  to C 12  aryl;  
 organic silicon containing polymers having the formulae  
 [H—SiO 1.5 ] n [R—SiO 1.5 ] m , [H 0.4 —SiO 1.5-1.8 ] n [R 0.4-1.0 —SiO 1.5-1.8 ] m , [H 0-1.0 —SiO 1.5-2.0 ] n [R—SiO 1.5 ] m , [H—SiO 1.5 ] x [R—SiO 1.5 ] y [SiO 2 ] z ,  
 wherein R is selected from substituted and unsubstituted straight chain and branched alkyl groups, cycloalkyl groups, substituted and unsubstituted aryl groups, and mixtures thereof; the sum of n and m, or the sum or x, y and z is from about 8 to about 5000, and m and y are selected such that carbon containing substituents are present in an amount of less than about 40 Mole percent;  
 organic silicon containing polymers having the formulae:  
 [HSiO 1.5 ] n [RSiO 1.5 ] m , [H 0.4-1.0 SiO 1.5-1.8 ] n [R 0.4-1.0 SiO 1.5-1.8 ] m , [H 0-1.0 SiO 1.5-2.0 ] n [RSiO 1.5 ] m ,  
 wherein the sum of n and m is from about 8 to about 5000 and m is selected such that the carbon containing substituent is present in an amount of from about 40 mole percent or greater; and  
 [HSiO 1.5 ] x [RSiO 1.5 ] y [SiO 2 ] z ;  
 wherein the sum of x, y and z is from about 8 to about 5000 and y is selected such that the carbon containing substituent is present in an amount of about 40 mole % or greater;  
 and wherein R is selected from substituted and unsubstituted straight chain and branched alkyl groups, cycloalkyl groups, substituted and unsubstituted aryl groups, and mixtures thereof, and mixtures thereof; and  
 wherein the inorganic dielectric layer comprises an inorganic dielectric selected from the group consisting of hydrogensiloxanes, inorganic hydrogensilsesquioxanes and combinations thereof; and wherein the hydrogensiloxanes have the formula [(HSiO 1.5 ) x O y ] n , and the hydrogensilsesquioxanes have the formula (HSiO 1.5 ) n , wherein x=about 6 to about 20, y=1 to about 3, and n=1 to about 4,000.  
 
     
     
         35 . The integrated circuit structure of  claim 15  wherein the organic via level dielectric comprises an organic dielectric selected from the group consisting of alkoxysilane polymers, organic siloxanes, hydroorganosiloxanes, hydrogenmethylsilsesquioxane, hydrogenethylsilsesquioxane, hydrogenpropylsilsesquioxane, hydrogenbutylsilsesquioxane, hydrogentert-butylsilsesquioxane and hydrogenphenylsilsesquioxane, methylated siloxane polymers; 
 polymers having the formulae [(HSiO 1.5 ) x O y (RSiO 1.5 ) z ] n , [(HSiO 1.5 ) x (RSiO 1.5 ) y ] n  and [(HSiO 1.5 ) x O y (RSiO 1.5 ) z ] n  wherein x=about 6 to about 20, y=1 to about 3, z=about 6 to about 20, n=1 to about 4,000, and each R is independently C 1  to C 8  alkyl or C 6  to C 12  aryl;  
 organic silicon containing polymers having the formulae  
 [H—SiO 1.5 ] n [R—SiO 1.5 ] m , [H 0.4 —SiO 1.5-1.8 ] n [R 0.4-1.0 —SiO 1.5-1.8 ] m , [H 0-1.0 —SiO 1.5-2.0 ] n [R—SiO 1.5 ] m , [H—SiO 1.5 ] x [R—SiO 1.5 ] y [SiO 2 ] z ,  
 wherein R is selected from substituted and unsubstituted straight chain and branched alkyl groups, cycloalkyl groups, substituted and unsubstituted aryl groups, and mixtures thereof; the sum of n and m, or the sum or x, y and z is from about 8 to about 5000, and m and y are selected such that carbon containing substituents are present in an amount of less than about 40 Mole percent;  
 organic silicon containing polymers having the formulae:  
 [HSiO 1.5 ] n [RSiO 1.5 ] m , [H 0.4-1.0 SiO 1.5-1.8 ] n [R 0.4-1.0 SiO 1.5-1.8 ] m , [H 0-1.0 SiO 1.5-2.0 ] n [RSiO 1.5 ] m ,  
 wherein the sum of n and m is from about 8 to about 5000 and m is selected such that the carbon containing substituent is present in an amount of from about 40 mole percent or greater; and  
 [HSiO 1.5 ] x [RSiO 1.5 ] y [SiO 2 ] z ;  
 wherein the sum of x, y and z is from about 8 to about 5000 and y is selected such that the carbon containing substituent is present in an amount of about 40 mole % or greater;  
 and wherein R is selected from substituted and unsubstituted straight chain and branched alkyl groups, cycloalkyl groups, substituted and unsubstituted aryl groups, and mixtures thereof, and mixtures thereof; and  
 wherein the inorganic dielectric layer comprises an inorganic dielectric selected from the group consisting of hydrogensiloxanes, inorganic hydrogensilsesquioxanes and combinations thereof; and wherein the hydrogensiloxanes have the formula [(HSiO 1.5 ) x O y ] n , and the hydrogensilsesquioxanes have the formula (HSiO 1.5 ) n  wherein x=about 6 to about 20, y=1 to about 3, and n=1 to about 4,000.  
 
     
     
         36 . The integrated circuit structure of  claim 19  wherein the organic via level dielectric comprises an organic dielectric selected from the group consisting of alkoxysilane polymers, organic siloxanes, hydroorganosiloxanes, hydrogenmethylsilsesquioxane, hydrogenethylsilsesquioxane, hydrogenpropylsilsesquioxane, hydrogenbutylsilsesquioxane, hydrogentert-butylsilsesquioxane and hydrogenphenylsilsesquioxane, methylated siloxane polymers; 
 polymers having the formulae [(HSiO 1.5 ) x O y (RSiO 1.5 ) z ] n , [(HSiO 1.5 ) x (RSiO 1.5 ) y ] n  and [(HSiO 1.5 ) x O y (RSiO 1.5 ) z ] n  wherein x=about 6 to about 20, y=1 to about 3, z=about 6 to about 20, n=1 to about 4,000, and each R is independently C 1  to C 8  alkyl or C 6  to C 12  aryl;  
 organic silicon containing polymers having the formulae  
 [H—SiO 1.5 ] n [R—SiO 1.5 ] m , [H 0.4 —SiO 1.5-1.8 ] n [R 0.4-1.0 —SiO 1.5-1.8 ] m , [H 0-1.0 —SiO 1.5-2.0 ] n [R—SiO 1.5 ] m , [H—SiO 1.5 ] x [R—SiO 1.5 ] y [SiO 2 ] z ,  
 wherein R is selected from substituted and unsubstituted straight chain and branched alkyl groups, cycloalkyl groups, substituted and unsubstituted aryl groups, and mixtures thereof; the sum of n and m, or the sum or x, y and z is from about 8 to about 5000, and m and y are selected such that carbon containing substituents are present in an amount of less than about 40 Mole percent;  
 organic silicon containing polymers having the formulae:  
 [HSiO 1.5 ] n [RSiO 1.5 ] m , [H 0.4-1.0 SiO 1.5-1.8 ] n [R 0.4-1.0 SiO 1.5-1.8 ] m , [H 0-1.0 SiO 1.5-2.0 ] n [RSiO 1.5 ] m ,  
 wherein the sum of n and m is from about 8 to about 5000 and m is selected such that the carbon containing substituent is present in an amount of from about 40 mole percent or greater; and  
 [HSiO 1.5 ] x [RSiO 1.5 ] y [SiO 2 ] z ;  
 wherein the sum of x, y and z is from about 8 to about 5000 and y is selected such that the carbon containing substituent is present in an amount of about 40 mole % or greater;  
 and wherein R is selected from substituted and unsubstituted straight chain and branched alkyl groups, cycloalkyl groups, substituted and unsubstituted aryl groups, and mixtures thereof, and mixtures thereof; and  
 wherein the inorganic dielectric layer comprises an inorganic dielectric selected from the group consisting of hydrogensiloxanes, inorganic hydrogensilsesquioxanes and combinations thereof; and wherein the hydrogensiloxanes have the formula [(HSiO 1.5 ) x O y ] n , and the hydrogensilsesquioxanes have the formula (HSiO 1.5 ) n , wherein x=about 6 to about 20, y=1 to about 3, and n=1 to about 4,000.