Spin bowl compatible polyamic acids/imides as wet developable polymer binders for anti-reflective coatings

Abstract

Anti-reflective compositions and methods of using these compositions to form circuits are provided. The compositions comprise a polymer dissolved or dispersed in a solvent system. In a preferred embodiment, the polymers of the composition include recurring monomers having the formulas where: (1) each R is individually selected from the group consisting of hydrogen, —OH, aliphatics, and phenyls; and (2) L is selected from the group consisting of —SO 2 — and —CR′ 2 —, where each R′ is individually selected from the group consisting of hydrogen, aliphatics, phenyls, and —CX 3 , where each X is individually selected from the group consisting of the halogens. The resulting compositions are spin bowl compatible (i.e., they do not crosslink prior to the bake stages of the microlithographic processes or during storage at room temperature), are wet developable, and have superior optical properties.

We claim:  
     
         1 . A polymer formed by polymerizing a compound having the formula  
       
         
           
           
               
               
           
         
         with a compound having the formula  
         
           
             
             
                 
                 
             
           
         
         wherein:  
         each R is individually selected from the group consisting of —OH, —NH 2 , hydrogen, aliphatics, and phenyls, at least one R on each ring of (I) being —NH 2 ; and  
         L is selected from the group consisting of —SO 2 — and —CR 12 —, where each R′ is individually selected from the group consisting of hydrogen, aliphatics, phenyls, and —CX 3 , where each X is individually selected from the group consisting of the halogens.  
       
     
     
         2 . The polymer of  claim 1 , wherein at least one R on each ring of (I) is —OH.  
     
     
         3 . The polymer of  claim 1 , wherein L is —SO 2 —.  
     
     
         4 . The polymer of  claim 1 , wherein L is —CR 12 —.  
     
     
         5 . The polymer of  claim 4 , each R′ is —CF 3 .  
     
     
         6 . In a composition for use in photolithographic processes wherein the composition comprises a polymer dissolved or dispersed in a solvent system, the improvement being that said polymer is a copolymer of a compound having the formula  
       
         
           
           
               
               
           
         
         and a compound having the formula  
         
           
             
             
                 
                 
             
           
         
         wherein:  
         each R is individually selected from the group consisting of —OH, —NH 2 , hydrogen, aliphatics, and phenyls, at least one R on each ring of (I) being —NH 2 ; and  
         L is selected from the group consisting of —SO 2 — and —CR 12 —, where each R′ is individually selected from the group consisting of hydrogen, aliphatics, phenyls, and —CX 3 , where each X is individually selected from the group consisting of the halogens.  
       
     
     
         7 . The composition of  claim 6 , wherein at least one R on each ring of (I) is —OH.  
     
     
         8 . The composition of  claim 6 , wherein L is —SO 2 —.  
     
     
         9 . The composition of  claim 6 , wherein L is —CR 12 —.  
     
     
         10 . The composition of  claim 9 , each R′ is —CF 3 .  
     
     
         11 . The combination of: 
 a substrate having a surface; and    an anti-reflective layer adjacent said surface, said anti-reflective layer being formed from a composition comprising a polymer dissolved or dispersed in a solvent system, said polymer being a copolymer of a compound having the formula                           and a compound having the formula                          wherein:    each R is individually selected from the group consisting of —OH, —NH 2 , hydrogen, aliphatics, and phenyls, at least one R on each ring of (I) being —NH 2 ; and    L is selected from the group consisting of —SO 2 — and —CR 12 —, where each R′ is individually selected from the group consisting of hydrogen, aliphatics, phenyls, and —CX 3 , where each X is individually selected from the group consisting of the halogens.    
     
     
         12 . The combination of  claim 11 , said layer being a cured layer.  
     
     
         13 . The combination of  claim 12 , said cured layer being wet developable.  
     
     
         14 . The combination of  claim 12 , wherein said cured layer has a percent solubility of at least about 50% when propylene glycol methyl ether acetate is the solvent.  
     
     
         15 . The combination of  claim 11 , wherein said substrate is selected from the group consisting of silicon wafers and ion implant layers.  
     
     
         16 . The combination of  claim 12 , said combination further comprising a photoresist layer adjacent said cured layer.  
     
     
         17 . The combination of  claim 12 , said cured layer being at least about 90% soluble in a base developer.  
     
     
         18 . The combination of  claim 11 , wherein at least one R on each ring of (I) is —OH.  
     
     
         19 . The combination of  claim 11 , wherein L is —SO 2 —.  
     
     
         20 . The combination of  claim 11 , wherein L is —CR′ 2 —.  
     
     
         21 . The combination of  claim 20 , wherein each R′ is —CF 3 .  
     
     
         22 . A method of using a composition in photolithographic processes, said method comprising the step of applying a quantity of a composition to a substrate to form a layer thereon, said composition comprising a polymer dissolved or dispersed in a solvent system, said polymer being a copolymer of a compound having the formula  
       
         
           
           
               
               
           
         
         and a compound having the formula  
         
           
             
             
                 
                 
             
           
         
         wherein:  
         each R is individually selected from the group consisting of —OH, —NH 2 , hydrogen, aliphatics, and phenyls, at least one R on each ring of (I) being —NH 2 ; and  
         L is selected from the group consisting of —SO 2 — and —CR′ 2 —, where each R′ is individually selected from the group consisting of hydrogen, aliphatics, phenyls, and —CX 3 , where each X is individually selected from the group consisting of the halogens.  
       
     
     
         23 . The method of  claim 22 , wherein said applying step comprises spin-coating said composition onto said substrate surface.  
     
     
         24 . The method of  claim 22 , wherein said substrate has a hole formed therein, said hole being defined by a bottom wall and sidewalls, and said applying step comprises applying said composition to at least a portion of said bottom wall and sidewalls.  
     
     
         25 . The method of  claim 22 , further including the step of baking said layer, after said applying step, at a temperature of from about 100-250° C. to yield a cured layer.  
     
     
         26 . The method of  claim 25 , further including the step of applying a photoresist to said cured layer.  
     
     
         27 . The method of  claim 26 , furthering including the steps of: 
 exposing at least a portion of said photoresist to activating radiation; and    developing said exposed photoresist.    
     
     
         28 . The method of  claim 27 , wherein said developing step results in the removal of said cured layer from areas adjacent said exposed photoresist.