Semiconductor integrated circuit and a method for forming the same

Abstract

A plating solution containing 10 to 40 wt % of copper hexafluorosilicate. With the use of this plating solution, a copper thin film which has a low film stress and a low resistivity and which strongly (111)-oriented is plating-deposited on the fine pattern portion a copper seed layer, and film peeling caused by deterioration of an adhesion force between an underlying barrier layer and a copper seed layer even in a heat treatment process and in a chemical mechanical polishing (CMP) process after plating deposition is prevented.

1 - 5 . (canceled).  
     
     
         6 : A method for forming a semiconductor integrated circuit having a copper seed layer, comprising a step of electroplating a copper thin film on the copper seed layer by using an aqueous solution of 10 to 40 wt % of copper hexafluorosilicate as an electrolyte.  
     
     
         7 : The method for forming a semiconductor integrated circuit having a copper seed layer according to  claim 6 , further comprising a step of depositing said copper seed layer on any one of a printed circuit board, a glass substrate and a silicon wafer wherein said step of depositing the copper seed layer is carried out prior to said step of electroplating the copper thin film.  
     
     
         8 : The method for forming a semiconductor integrated circuit having a copper seed layer according to any one of claims  6  and  7 , wherein a current having a current density of 0.5 to 1.5 A/dm 2  is used during said step of electroplating the copper thin film.  
     
     
         9 : The method for forming a semiconductor integrated circuit having a copper seed layer according to and one of claims  6  and  7 , wherein said aqueous solution is kept at the temperature of 20 to 40° C. during said step of electroplating the copper thin film.  
     
     
         10 : The method for forming a semiconductor integrated circuit having a copper seed layer according to  claim 8 , wherein said aqueous solution is kept at the temperature of 20 to 40° C. during said step of electroplating the copper thin film.  
     
     
         11 : The method for forming a semiconductor integrated circuit having a copper seed layer according to any one of claims  6  and  7 , further comprising a step of adding an additive agent to said aqueous solution during said step of electroplating the copper thin film, wherein said additive agent is in a range of 0.5 to 1.5 wt %.  
     
     
         12 : The method for forming a semiconductor integrated circuit having a copper seed layer according to  claim 8 , further comprising a step of adding an additive agent to said aqueous solution during said step of electroplating the copper thin film, wherein said additive agent is in a range of 0.5 to 1.5 wt %.  
     
     
         13 : The method for forming a semiconductor integrated circuit having a copper seed layer according to  claim 9 , further comprising a step of adding an additive agent to said aqueous solution during said step of electroplating the copper thin film, wherein said additive agent is in a range of 0.5 to 1.5 wt %.  
     
     
         14 : The method for forming a semiconductor integrated circuit having a copper seed layer according to  claim 10 , further comprising a step of adding an additive agent to said aqueous solution during said step of electroplating the copper thin film, wherein said additive agent is in a range of 0.5 to 1.5 wt %.  
     
     
         15 : A semiconductor integrated circuit comprising a copper seed layer having a copper thin film thereon, wherein said copper thin film is deposited by using an aqueous solution of 10 to 40 wt % of copper hexafluorosilicate as an electrolyte.  
     
     
         16 : The semiconductor integrated circuit according to  claim 15 , wherein said copper seed layer is deposited on any one of a printed circuit board, a glass substrate and a silicon wafer.  
     
     
         17 : The semiconductor integrated circuit according to any one of claims  15  and  16 , wherein said copper thin film is deposited by using a current having a current density of 0.5 to 1.5 A/dm 2 .  
     
     
         18 : The semiconductor integrated circuit according to any one of claims  15  and  16 , wherein said copper thin film is deposited in a condition of keeping said aqueous solution at the temperature of 20 to 40° C.  
     
     
         19 : The semiconductor integrated circuit according to  claim 17 , wherein said copper thin film is deposited in a condition of keeping said aqueous solution at the temperature of 20 to 40° C.  
     
     
         20 : The semiconductor integrated circuit according to any one of claims  15  and  16 , wherein an additive agent in a range of 0.5 to 1.5 wt % is added to said aqueous solution.  
     
     
         21 : The semiconductor integrated circuit according to  claim 17 , wherein an additive agent in a range of 0.5 to 1.5 wt % is added to said aqueous solution.  
     
     
         22 : The semiconductor integrated circuit according to  claim 18 , wherein an additive agent in a range of 0.5 to 1.5 wt % is added to said aqueous solution.  
     
     
         23 : The semiconductor integrated circuit according to  claim 19 , wherein an additive agent in a range of 0.5 to 1.5 wt % is added to said aqueous solution.