Plasm etching device

Abstract

A plasma etching device using radio frequency electromagnetic energy to produce the plasma comprises a plasma reaction cavity and a rotary access device; the plasma reaction cavity has a substrate reaction disc and a radio frequency parallel electrode board therein; the substrate reaction disc is circular in shape; the rotary access device is adjacent to the plasma reaction cavity for placing a substrate that requires processing into the plasma reaction connect chamber; the substrate is placed into or removed from the narrow and small sealed connect chamber in the plasma reaction cavity by the rotary access device.

What is claimed is:  
     
         1 . An etching device using a radio frequency method to produce plasma for etching, characterized in that: 
 a plasma reaction cavity, having a circular substrate reaction disc and a ring-shaped radio frequency parallel electrode;    a rotary access device adjacent to said plasma reaction cavity, for respectively placing and removing a substrate that requires processing into and from a plasma reaction connect chamber;    thereby said rotary access device continuously placing another substrate into a vacuum plasma reaction area to constitute a continuous plasma reaction cavity together with a ring-shaped radio frequency parallel electrode capable of generating an induced radio frequency electromagnetic effect to enhance the production of plasma.    
     
     
         2 . The etching device of  claim 1 , wherein said plasma reaction cavity comprises a rotary unit.  
     
     
         3 . The etching device of  claim 1 , wherein said plasma reaction cavity comprises a pump.  
     
     
         4 . The etching device of  claim 1 , wherein said rotary access device is a robotic arm.