Semiconductor stress buffer coating edge bead removal compositions and method for their use

Abstract

An edge bead remover composition that includes at least one ketone selected from the group consisting of: wherein R 1 and R 2 are independently selected from the group consisting of: methyl, ethyl, n-propyl, n-butyl, sec-butyl, and isobutyl, and wherein n equals 1 or 2; at least one ester other than lactones; and at least one lactone.

1 - 13 . canceled  
     
     
         14 . A process for removing residue from a substrate comprising: 
 applying a coating composition onto said substrate to form a coated substrate with an edge bead formed thereon;    contacting said edge bead formed on said coated substrate with an edge bead remover composition comprising:    at least one ketone selected from the group consisting of:                          wherein R 1  and R 2  are independently selected from the group consisting of: methyl, ethyl, n-propyl, n-butyl, sec-butyl, and isobutyl, and wherein n equals 1 or 2;    at least one ester other than lactones; and    at least one lactone, thereby dissolving said edge bead; and    removing said dissolved edge bead from said coated substrate.    
     
     
         15 . The process of  claim 14 , further comprising, after contacting said coated substrate with said edge bead remover composition, dissolving any unwanted coating composition from a bottom side of said coated substrate.  
     
     
         16 . The process of  claim 14 , wherein said coating composition is selected from the group consisting of: stress buffer coating and positive photoresist coating.  
     
     
         17 . The process of  claim 14 , wherein said coating composition is stress buffer coating.  
     
     
         18 . The process of  claim 17 , wherein said stress buffer coating composition is selected from the group consisting of: polyimide polymer, polyimide precursor polymer, and any combinations thereof.  
     
     
         19 . The process of  claim 17 , wherein said stress buffer coating composition is selected from the group consisting of: polyamide ester polymers with radiation sensitive moieties in the ester group and polyamide ester polymers without radiation sensitive moieties in the ester group.  
     
     
         20 . The process of  claim 17 , wherein said stress buffer coating composition is selected from the group consisting of: polybenzoxazole polymer, polybenzoxazole precursor polymer, and any combinations thereof.  
     
     
         21 . The process of  claim 14 , wherein said coating composition is applied to said substrate with a semiconductor wafer spin coating machine.  
     
     
         22 . The process of  claim 14 , wherein said substrate comprises material selected from the group consisting of: silicon, aluminum, copper, chromium, nickel, gold, tantalum, titanium, tungsten, ferrous metals, aluminum/copper alloys, polymeric resins, silicon dioxide, doped silicon dioxide, silicone resins, silicon carbide, silicon nitride, titanium nitride, tantalum nitride, silicon arsenide, gallium arsenide, indium phosphide, indium selenide, indium-tin oxide, tantalum, polysilicon, inorganic glasses, ceramic, and any combinations thereof.  
     
     
         23 . The process of  claim 22 , wherein said substrate is a silicon wafer.  
     
     
         24 . A process for removing an edge bead from a substrate comprising: 
 contacting said edge bead coating with a composition comprising:    at least one ketone selected from the group consisting of:                          wherein R 1  and R 2  are independently selected from the group consisting of: methyl, ethyl, n-propyl, n-butyl, sec-butyl, and isobutyl, and wherein n equals 1 or 2;    at least one ester other than lactones; and    at least one lactone, thereby dissolving said edge bead; and    removing said dissolved edge bead from said substrate.    
     
     
         25 . The process of  claim 24 , wherein said substrate is coated with a stress buffer coating.  
     
     
         26 . The process of  claim 24 , wherein said substrate is coated with a positive photoresist coating.  
     
     
         27 . The composition of  claim 24 , wherein said at least one ketone comprises 4 to 6 carbon atoms.  
     
     
         28 . The composition of  claim 24 , wherein said at least one ketone comprises 5 or 6 carbon atoms and wherein R 1  and R 2  are independently selected from the group consisting of: methyl, ethyl, n-propyl, n-butyl, and isobutyl groups.  
     
     
         29 . The composition of  claim 24 , wherein said at least one ketone is 2-pentanone.  
     
     
         30 . The composition of  claim 24 , wherein said at least one ester is ethyl lactate.  
     
     
         31 . The composition of  claim 24 , wherein said at least one lactone is selected from the group consisting of: gamma-butyrolactone, gamma-valerolactone, gamma-caprolactone, delta-valerolactone, and any combinations thereof.  
     
     
         32 . The composition of  claim 31 , wherein said lactone is gamma-butyrolactone.  
     
     
         33 . The composition of  claim 24 , wherein said at least one ketone is present in an amount between about 25 wt. % to about 55 wt. %; said at least one ester is present in an amount between about 20 wt. % to about 55 wt. %; and said at least one lactone is present in an amount between about 10 wt. % to about 35 wt. %.  
     
     
         34 . The composition of  claim 33 , wherein said at least one ketone is present in an amount between about 30 wt. % to about 50 wt. %; said at least one ester is present in an amount between about 30 wt. % to about 50 wt. %; and said at least one lactone is present in an amount between about 15 wt. % to about 35 wt. %.  
     
     
         35 . The composition of  claim 33 , wherein said at least one ketone is present in an amount between about 35 wt. % to about 50 wt. %; said at least one ester is present in an amount between about 35 wt. % to about 50 wt. %; and said at least one lactone is present in an amount between about 20 wt. % to about 30 wt. %.  
     
     
         36 . The composition of  claim 24 , wherein said at least one ketone is between about 25 wt. % to about 55 wt. % 2-pentanone; said at least one ester is between about 20 wt. % to about 55 wt. % ethyl lactate; and said at least one lactone is between about 10 wt. % to about 35 wt. % gamma-butyrolactone.  
     
     
         37 . The composition of  claim 24 , wherein said at least one ketone is between about 30 wt. % to about 50 wt. % 2-pentanone; said at least one ester is between about 30 wt. % to about 50 wt. % ethyl lactate; and at least one lactone is about 15 wt. % to about 35 wt. % gamma-butyrolactone.  
     
     
         38 . The composition of  claim 24 , wherein said at least one ketone is between about 35 wt. % to about 50 wt. % 2-pentanone; said at least one ester is between about 35 wt. % to about 50 wt. % ethyl lactate; and said at least one lactone is between about 20 wt. % to about 30 wt. % gamnia-butyrolactone.  
     
     
         39 . The process of  claim 24 , further comprising, after contacting said edge bead with said composition, dissolving a coating composition from a bottom side of said substrate.