US2005000821A1PendingUtilityA1
Anodes for electroplating operations, and methods of forming materials over semiconductor substrates
Priority: Nov 16, 2001Filed: Nov 16, 2001Published: Jan 6, 2005
Est. expiryNov 16, 2021(expired)· nominal 20-yr term from priority
H10W 72/952H10W 72/29H10W 72/251H10W 72/252H10W 72/012H10W 72/01255H10W 72/019H10W 72/20H10P 14/47C25D 17/10C25D 7/123
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Claims
Abstract
The invention includes anodes for electroplating, baths. The anodes have a purity of at least 99.9%, and comprise one or more of silver, gold, nickel, chromium, copper or various solder compositions. The anodes can, for example, comprise at least 99.995% copper/phosphorus alloy, by weight; or at least 99.995% nickel and sulfur, by weight. The invention also includes methods of electroplating, materials over semiconductor substrates.
Claims
exact text as granted — not AI-modified1 . An anode for an electroplating bath comprising a total number of grains therein, and wherein at least 25% of the total number of grains have a common crystallographic texture as one another, and wherein the common crystallographic texture is (001).
2 . The anode of claim 1 wherein at least 50% of the total number of grains have the common crystallographic texture as one another.
3 . The anode of claim 1 wherein at least 75% of the total number of grains have the common crystallographic texture as one another.
4 . The anode of claim 1 wherein at least 90% of the total number of grains have the common crystallographic texture as one another.
5 . The anode of claim 1 comprising an HCP metal.
6 . The anode of claim 1 comprising cobalt.
7 . An anode for an electroplating bath comprising an average grain size of less than 100 micrometers.
8 . The anode of claim 7 comprising an average grain size of less than 50 micrometers.
9 . The anode of claim 7 comprising an average grain size of less than 10 micrometers.
10 . The anode of claim 7 comprising an average grain size of less than 1 micrometer.
11 . The anode of claim 7 comprising predominantly one or more of silver, gold, nickel, cobalt and chromium by weight.
12 . An anode for an electroplating bath and having an alpha particle emission rate of less than 0.1 counts/(cm 2 hr).
13 . The anode of claim 12 having an alpha particle emission rate of less than 0.02 counts/(cm 2 hr).
14 . The anode of claim 12 having an alpha particle emission rate of less than 0.002 counts/(cm 2 hr).
15 . The anode of claim 12 comprising less than 3 ppb total of thorium and uranium.
16 . The anode of claim 12 comprising less than 1 ppb total of thorium and uranium.
17 . The anode of claim 12 comprising less than 0.5 ppb total of thorium and uranium.
18 . The anode of claim 12 comprising one or more of bismuth, silver, tin, lead, copper, nickel, chromium, and cobalt.
19 . An anode for an electroplating bath, the anode comprising at least 99.99% of silver, gold, nickel, chromium or cobalt, by weight.
20 . The anode of claim 19 comprising at least 99.99% silver.
21 . The anode of claim 19 comprising at least 99.99% gold.
22 . The anode of claim 19 comprising at least 99.99% chromium.
23 . The anode of claim 19 comprising at least 99.99% cobalt.
24 . The anode of claim 19 comprising at least 99.99% nickel.
25 . The anode of claim 19 comprising less than 3 parts per billion of uranium, and further comprising less than 3 parts per billion of thorium.
26 . The anode of claim 19 comprising an average grain size of less than 100 micrometers.
27 . The anode of claim 19 comprising an average grain size of less than 50 micrometers.
28 . The anode of claim 19 comprising an average grain size of less than 10 micrometers.
29 . The anode of claim 19 comprising an average grain size of less than 1 micrometer.
30 . The anode of claim 19 comprising at least 99.995% nickel, by weight.
31 . The anode of claim 30 comprising an average grain size of less than 100 micrometers.
32 . The anode of claim 30 comprising an average grain size of less than 50 micrometers.
33 . The anode of claim 30 comprising an average grain size of less than 10 micrometers.
34 . The anode of claim 30 comprising an average grain size of less than 1 micrometer.
35 . The anode of claim 30 comprising at least 99.9995% nickel.
36 . An anode for an electroplating bath comprising at least 99.999% copper, by weight.
37 . The anode of claim 36 comprising at least 99.9995% copper.
38 . The anode of claim 36 comprising an average grain size of less than 100 micrometers.
39 . The anode of claim 36 comprising an average grain size of less than 50 micrometers.
40 . The anode of claim 36 comprising an average grain size of less than 10 micrometers.
41 . The anode of claim 36 comprising an average grain size of less than 1 micrometer.
42 . The anode of claim 36 comprising less than 3 parts per billion of uranium, and further comprising less than 3 parts per billion of thorium.
43 . An anode comprising at least 99.995%, by weight, copper/phosphorous alloy, and comprising an average grain size of less than 100 micrometers.
44 . The anode of claim 43 wherein the phosphorus concentration is from about 200 ppm to about 1000 ppm, by weight.
45 . The anode of claim 43 comprising an average grain size of less than 50 micrometers.
46 . The anode of claim 43 comprising an average grain size of less than 10 micrometers.
47 . The anode of claim 43 comprising an average grain size of less than 1 micrometer.
48 . An anode for an electroplating bath comprising at least 99.995% nickel and sulfur, by weight.
49 . The anode of claim 48 comprising from about 0.01% sulfur to about 5% sulfur, by weight.
50 . The anode of claim 48 comprising an average grain size of less than 100 micrometers.
51 . The anode of claim 48 comprising an average grain size of less than 50 micrometers.
52 . The anode of claim 48 comprising an average grain size of less than 10 micrometers.
53 . The anode of claim 48 comprising an average grain size of less than 1 micrometer.
54 . An anode for an electroplating bath comprising a solder composition having a purity of at least 99.999%, by weight; said solder composition comprising one or more elements selected from the group consisting of tin, antimony, lead, silver, copper and bismuth.
55 . The anode of claim 54 comprising an average grain size of less than 30 micrometers.
56 . The anode of claim 54 comprising an average grain size of less than 10 micrometers.
57 . The anode of claim 54 comprising an average grain size of less than 5 micrometers.
58 . The anode of claim 54 comprising an average grain size of less than 1 micrometer.
59 . The anode of claim 54 comprising at least 99.9995% solder.
60 . The anode of claim 54 comprising less than 3 parts per billion of uranium, and further comprising less than 3 parts per billion of thorium.
61 . The anode of claim 54 comprising at least 99.999% tin.
62 . The anode of claim 54 wherein the solder composition comprises tin and antimony.
63 . The anode of claim 54 wherein the solder composition comprises tin and lead.
64 . The anode of claim 54 wherein the solder composition comprises tin and silver.
65 . The anode of claim 54 wherein the solder composition comprises tin, silver and copper.
66 . The anode of claim 54 wherein the solder composition comprises silver and bismuth.
67 . The anode of claim 54 wherein the solder composition comprises tin and copper.
68 . A method of forming materials over a semiconductor substrate, comprising:
providing a semiconductor substrate having a wiring layer thereon; electrolytically depositing at least one of silver and nickel over the wiring layer; any silver being deposited from an anode that is at least 99.995% pure in silver; and any nickel being deposited from an anode that is either at least 99.995% pure in nickel, or at least 99.995% pure in nickel and sulfur, with the sulfur being present to a concentration of from about 0.01% to about 5%, by weight; and forming a solder over the at least one of silver and nickel.
69 . The method of claim 68 wherein the wiring layer comprises copper, and is formed by electrolytic deposition utilizing an anode that is either at least 99.999% copper, by weight, or at least 99.995% copper/phosphorous alloy, with the phosphorus concentration being from about 200 ppm to about 1000 ppm, by weight.
70 . The method of claim 68 wherein the solder is formed by electrolytic deposition utilizing an anode that comprises a solder composition having a purity of at least 99.999%, by weight; said solder composition comprising one or more elements selected from the group consisting of tin, antimony, lead, silver, copper and bismuth.
71 . The method of claim 68 wherein the electrolytic deposition forms nickel over the wiring layer; the electrolytic deposition occurs in a bath, and the bath is initially charged with metallic materials that are either at least 99.995% pure in nickel, or at least 99.995% pure in nickel and sulfur, with the sulfur being present to a concentration of from about 0.01% to about 5%, by weight.
72 . The method of claim 68 wherein the electrolytic deposition forms silver over the wiring layer; the electrolytic deposition occurs in a bath, and the bath is initially charged with particulates that are at least 99.995% pure in silver.Join the waitlist — get patent alerts
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