Zn based semiconductor luminiscent element and method for preparation thereof

Abstract

A p-n junction interface 3 is formed between an n-type ZnTe 1-x O x (0.5≦x≦1) layer 8 and a p-type ZnTe 1-x O x (0≦x<0.5) layer 7 , and the n-type ZnTeO layer 8 and/or p-type ZnTeO layer 7 are formed by thermal oxidation of the main surficial side of a p-type ZnTe wafer. This is successful in providing a Zn-base semiconductor light emitting device and a method of fabricating thereof possibly be improved in the emission efficiency at a light emitting layer composed of a Zn-base semiconductor light emitting device.

1 . A Zn-base semiconductor light emitting device comprising a light-emitting region in which a p-n junction is formed by an interface between an n-type layer and a p-type layer; the n-type layer being a Zn-base semiconductor composed of Zn as a Group II element, and O or a combination of O and Te as Group VI element(s); and the p-type layer being a Zn-base semiconductor having a Te content larger than that of the n-type layer.  
   
   
       2 . The Zn-base semiconductor light emitting device as claimed in  claim 1 , wherein the p-type layer is a Zn-base semiconductor composed of ZnTe.  
   
   
       3 . The Zn-base semiconductor light emitting device as claimed in  claim 1 , wherein the p-type layer is a Zn-base semiconductor composed of Zn as a Group II element, and O and Te as Group VI elements.  
   
   
       4 . A method of fabricating a Zn-base semiconductor light emitting device comprising a step of annealing a p-type ZnTe wafer in an oxidative atmosphere, to thereby form an n-type layer, which is a Zn-base semiconductor composed of Zn as a Group II element, and O or a combination of O and Te as Group VI element(s), and to consequently form a p-n junction therebetween.  
   
   
       5 . A method of fabricating a Zn-base semiconductor light emitting device having a light emitting region in which a p-n junction is formed at an interface between an n-type layer composed of ZnO, and a p-type layer composed of Zn as a Group II element, and O or a combination of O and Te as Group VI element(s); wherein 
 the method comprises a step of formation-by-stacking of the n-type layer on the main surface of the p-type ZnTe wafer.    
   
   
       6 . A method of fabricating a Zn-base semiconductor light emitting device having a light emitting region in which a p-n junction is formed at an interface between an n-type layer composed of ZnO, and a p-type layer composed of Zn as a Group II element, and O or a combination of O and Te as Group VI element(s); wherein 
 the method comprises a step of formation-by-stacking of the n-type layer on the main surface of the p-type ZnTe wafer, after being annealed under an oxygen atmosphere.    
   
   
       7 . The method of fabricating a Zn-base semiconductor light emitting device as claimed in  claim 5 , wherein the formation-by-stacking is based on the vapor-phase epitaxy process or deposition process.  
   
   
       8 . The method of fabricating a Zn-base semiconductor light emitting device as claimed in  claim 6 , wherein the formation-by-stacking is based on the vapor-phase epitaxy process or deposition process.