Method for manufacturing semiconductor light-emitting device

Abstract

A method for manufacturing a semiconductor light-emitting device. The semiconductor light-emitting device has a substrate, and a semiconductor layer, a n-type semiconductor layer, and a p-type semiconductor layer successively formed atop the substrate. The method forms an intermediate layer having a predetermined pattern between the substrate and the semiconductor layer, or between the semiconductor layer and the n-type semiconductor layer, or between the n-type semiconductor layer and the p-type semiconductor layer. The p-type semiconductor layer has an uneven top layer due to the intermediate layer having a predetermined pattern and the total internal reflection of the LED can be reduced. The intermediate layer is a conductive material to reduce serial resistance of the LED.

1 . A method for manufacturing semiconductor light-emitting device, comprising the steps of: 
 providing a substrate;    providing an intermediate layer with a predetermined pattern;    providing a semiconductor layer;    providing a first-conductive type semiconductor layer; and    providing a second-conductive type semiconductor layer at a topmost position of the light-emitting device; wherein:    the second-conductive type semiconductor layer has an uneven thickness due to a presence of the intermediate layer with the predetermined pattern; and    a thickness of the second-conductive type semiconductor layer atop the intermediate layer and a thickness of the second-conductive type semiconductor layer not atop the intermediate layer are different.    
     
     
         2 . The method for manufacturing a semiconductor light-emitting device as in  claim 1 , wherein the first-conductive type is n-type and the second-conductive type is p-type.  
     
     
         3 . The method for manufacturing a semiconductor light-emitting device as in  claim 1 , wherein the first-conductive type is p-type and the second-conductive type is n-type.  
     
     
         4 . The method for manufacturing a semiconductor light-emitting device as in  claim 1 , wherein the thickness of the second-conductive type semiconductor layer atop the intermediate layer is less than the thickness of the second-conductive type semiconductor layer not atop the intermediate layer.  
     
     
         5 . The method for manufacturing a semiconductor light-emitting device as in  claim 1 , wherein the intermediate layer is placed between the substrate and the semiconductor layer, wherein a thickness of the semiconductor layer, the first-conductive type semiconductor layer and the second-conductive type semiconductor layer atop the intermediate layer is less than a thickness of the semiconductor layer, the first-conductive type semiconductor layer and the second-conductive type semiconductor layer not atop the intermediate layer.  
     
     
         6 . The method for manufacturing a semiconductor light-emitting device as in  claim 1 , wherein the intermediate layer is placed between the semiconductor layer and the first-conductive type semiconductor layer, wherein a thickness of the first-conductive type semiconductor layer and the second-conductive type semiconductor layer atop the intermediate layer is less than a thickness of the first-conductive type semiconductor layer and the second-conductive type semiconductor layer not atop the intermediate layer.  
     
     
         7 . The method for manufacturing a semiconductor light-emitting device as in  claim 1 , wherein the intermediate layer is placed between the first-conductive type semiconductor layer and the second-conductive type semiconductor layer.  
     
     
         8 . The method for manufacturing a semiconductor light-emitting device as in  claim 1 , wherein the substrate is sapphire.  
     
     
         9 . The method for manufacturing a semiconductor light-emitting device as in  claim 8 , wherein the semiconductor layer is a GaN layer or an AlN layer.  
     
     
         10 . The method for manufacturing a semiconductor light-emitting device as in  claim 8 , wherein the first-conductive type semiconductor layer and the second-conductive type semiconductor layer are a GaN-based material.  
     
     
         11 . The method for manufacturing a semiconductor light-emitting device as in  claim 1 , wherein the intermediate layer is an insulating material.  
     
     
         12 . The method for manufacturing a semiconductor light-emitting device as in  claim 1 , wherein the intermediate layer is a metal or conductive oxide.  
     
     
         13 . The method for manufacturing a semiconductor light-emitting device as in  claim 1 , wherein the predetermined pattern of the intermediate layer is striped, dotted, rectangular shape or hexagonal in shape.