US2005023678A1PendingUtilityA1

Chip structure with bumps and a process for fabricating the same

Priority: Jan 7, 2002Filed: Sep 20, 2004Published: Feb 3, 2005
Est. expiryJan 7, 2022(expired)· nominal 20-yr term from priority
Inventors:Chao-Fu Weng
H10W 72/9415H10W 72/01255H10W 72/923H10W 72/251H10W 72/20H10W 72/012H10W 72/019
41
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Claims

Abstract

A chip structure with bumps comprising: a chip and at least a bump. The chip has an active surface and at least a bonding pad that is formed on the active surface. The bump is disposed on the bonding pad, and the bump comprises a medium layer, a bump body and a bump body passivation layer. The medium layer whose material includes zinc is disposed on the bonding pad. The bump body whose material includes nickel is disposed on the medium layer. The bump body passivation layer whose material includes gold covers the bump body except for a portion of the bump body that connects to the medium layer.

Claims

exact text as granted — not AI-modified
1 . A chip structure with bumps comprising: 
 a chip having an active surface and at least a bonding pad, wherein the bonding pad is formed on the active surface; and    at least a bump disposed on the bonding pad, and the bump comprising:    a medium layer disposed on the bonding pad, wherein a material of the medium layer includes zinc;    a bump body disposed on the medium layer, wherein a material of the bump body includes nickel; and    a bump body passivation layer covering the bump body except for a portion of the bump body that connects to the medium layer, wherein a material of the bump body passivation layer includes gold.    
   
   
       2 . The chip structure with bumps of  claim 1 , wherein a height of the bump is about 5 to 10 microns.  
   
   
       3 . The chip structure with bumps of  claim 1 , wherein a thickness of the bump body passivation layer is about 1 to 3 microns.  
   
   
       4 . A bump suitable to be disposed on a chip, wherein the chip has an active surface and at least a bonding pad that exposes the active surface, and the bump comprising: 
 a medium layer disposed on the bonding pad; and    a bump body disposed on the medium layer, wherein a material of the bump body includes nickel.    
   
   
       5 . The bump of  claim 4 , further comprising a bump body passivation layer covering the bump body except for a portion of the bump body that connects to the medium layer.  
   
   
       6 . The bump of  claim 5 , wherein a material of the bump body passivation layer includes gold.  
   
   
       7 . The bump of  claim 5 , wherein a thickness of the bump body passivation layer is about 1 to 3 microns.  
   
   
       8 . The bump of  claim 4 , wherein a height of the bump is about 5 to 10 microns.  
   
   
       9 . The bump of  claim 4 , wherein a material of the medium layer includes zinc.  
   
   
       10 . A bump suitable to be disposed on a chip, wherein the chip has an active surface and at least a bonding pad that exposes the active surface, and the bump comprising: 
 a medium layer disposed on the bonding pad, wherein a material of the medium layer includes zinc; and    a bump body disposed on the medium layer.    
   
   
       11 . The bump of  claim 10 , further comprising a bump body passivation layer covering the bump body except for a portion of the bump body that connects to the medium layer.  
   
   
       12 . The bump of  claim 11 , wherein a material of the bump body passivation layer includes gold.  
   
   
       13 . The bump of  claim 11 , wherein a thickness of the bump body passivation layer is about 1 to 3 microns.  
   
   
       14 . The bump of  claim 10 , wherein a height of the bump is about 5 to 10 microns.

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