Semiconductor processing system and method

Abstract

Systems and methods are disclosed to perform semiconductor processing with a process chamber; a flash lamp adapted to be repetitively triggered; and a controller coupled to the control input of the flash lamp to trigger the flash lamp. The system can deploy a solid state plasma source in parallel with the flash lamp in wafer processing.

1 . A method to deposit a film in a processing chamber, comprising: 
 (a) introducing a first plurality of precursors to deposit a thin layer;    (b) either 
 triggering a flash lamp to generate thermal energy to modify the deposited layer; or  
 triggering a plasma source to generate a plasma energy to modify the deposited layer; or  
 triggering a flash lamp to generate thermal energy and triggering a plasma source to generate a plasma energy to modify the deposited layer.  
   
   
   
       2 . The method of  claim 1 , further comprising a step a1, after step a, of: 
 a1. Purging the first precursors.    
   
   
       3 . The method of  claim 1 , wherein the step b further comprising the introduction of a second plurality of precursors.  
   
   
       4 . The method of  claim 3 , further comprising a step b1, after step b, of: 
 b1. Purging the second precursors.    
   
   
       5 . The method of  claim 1 , further comprising a plurality of the steps a-b until a desired film thickness is reached.  
   
   
       6 . The method of  claim 2 , further comprising a plurality of the steps a-b until a desired film thickness is reached.  
   
   
       7 . The method of  claim 4 , further comprising a plurality of the steps a-b1 until a desired film thickness is reached.  
   
   
       8 . The method of  claim 1 , wherein the step a comprises a plasma energy in the deposition process.  
   
   
       9 . The method of  claim 1 , wherein the first plurality of precursors in steps a comprises CVD precursors.  
   
   
       10 . The method of  claim 3 , wherein the second plurality of precursors in steps b comprises process gases, selected from a group consisting of nitrogen, oxygen, hydrogen, ammonia, NF 3 , silane, ozone, argon.  
   
   
       11 . The method of  claim 3 , wherein the second plurality of precursors in steps b comprises CVD precursors.  
   
   
       12 . A method to deposit a film in a processing chamber, comprising: 
 (a) deposit a thin layer using a plasma assisted process; and    (b) triggering a flash lamp to generate thermal energy to modify the deposited layer.    
   
   
       13 . The method of  claim 12 , further comprising a step a1, after step a, of: 
 a1. Purging the first precursors.    
   
   
       14 . The method of  claim 12 , wherein the step b further comprising the introduction of a second plurality of precursors, and further comprising a step b1, after step b, of: 
 b1. Purging the second precursors.    
   
   
       15 . The method of  claim 12 , further comprising a plurality of the steps a-b until a desired film thickness is reached.  
   
   
       16 . A method to deposit a film in a processing chamber, comprising: 
 (a) deposit a thin layer using a flash lamp assisted process; and    (b) triggering a plasma source to generate plasma energy to modify the deposited layer.    
   
   
       17 . The method of  claim 16 , further comprising a step a1, after step a, of: 
 a1. Purging the first precursors.    
   
   
       18 . The method of  claim 16 , wherein the step b further comprising the introduction of a second plurality of precursors, and further comprising a step b1, after step b, of: 
 b1. Purging the second precursors.    
   
   
       19 . The method of  claim 16 , further comprising a plurality of the steps a-b until a desired film thickness is reached.  
   
   
       20 . The method of  claim 16 , wherein the step a comprises a plasma energy in the deposition process.