Semiconductor device having junction depths for reducing short channel effect

Abstract

A semiconductor device and a fabrication method thereof are disclosed. A silicon nitride film is formed over a silicon semiconductor substrate. Impurity ions are then implanted into desired areas of the silicon semiconductor substrate, so that nitrogen atoms and silicon atoms from the silicon nitride film are incorporated into the surface of the silicon semiconductor substrate together with introduction of impurity ions. The silicon semiconductor substrate has a minimized content of oxygen mixed thereinto and restored crystal defects filled by nitrogen atoms upon implanting of impurity ions. The fabricated semiconductor device is free from a trade-off relation between gate-electrode depletion and junction current leakage, and short-channel effects.

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       29 . A CMOS-type semiconductor device comprising: 
 an NMOSFET and a PMOSFET,    wherein n-type source and drain regions of the NMOSFET have a greater junction depth than P-type source and drain regions of the PMOSFET,    the NMOSFET and the PMOSFET each have gate electrodes,    silicide films are formed on the n-type source and drain regions and the p-type source and drain regions, or on the n-type source and drain regions, the p-type source and drain regions and the gate electrodes, and    the suicide films in the NMOSFET and PMOSFET are almost equal in thickness.