Isolating temperature sensitive components from heat sources in integrated circuits

Abstract

Temperature sensitive devices may be shielded from temperature generating devices on the same integrated circuit by appropriately providing a trench that thermally isolates the heat generating devices from the temperature sensitive devices. In one embodiment, the trench may be formed by a back side etch completely through an integrated circuit wafer. The resulting trench may be filled with a thermally insulating material.

1 . An integrated circuit comprising: 
 a heat sensitive region;    a heat generating region; and    a trench arranged to shield the heat generating region from the heat sensitive region.    
   
   
       2 . The circuit of  claim 1  wherein said trench is arranged around at least two sides of the heat generating region.  
   
   
       3 . The circuit of  claim 1  wherein said trench completely encircles the heat generating region.  
   
   
       4 . The circuit of  claim 1  formed on a semiconductor substrate, said trench extending completely through said substrate.  
   
   
       5 . The circuit of  claim 4  including a dielectric layer on the upper surface of said substrate.  
   
   
       6 . The circuit of  claim 1  including a trench fill material in said trench.  
   
   
       7 . The circuit of  claim 6  wherein said trench fill material is amorphous silicon dioxide.  
   
   
       8 . The circuit of  claim 1  wherein said circuit includes a semiconductor substrate and said trench extends into said substrate from a back side of said substrate.  
   
   
       9 . The circuit of  claim 8  wherein said trench extends from the back side of said substrate completely through said substrate.  
   
   
       10 . The circuit of  claim 9  wherein said trench is filled with a heat insulating fill material.  
   
   
       11 . An integrated circuit comprising: 
 a semiconductor substrate;    a first region of said substrate including a first element that is sensitive to heat;    a second region of said substrate including a second element that generates heat; and    a trench arranged between said first and second regions, said trench extending completely through said substrate.    
   
   
       12 . The circuit of  claim 11  wherein said substrate includes a top side and a back side and said trench extends from said back side to said top side.  
   
   
       13 . The circuit of  claim 11  including a dielectric layer disposed over an upper surface of said substrate and over said trench.  
   
   
       14 . The circuit of  claim 11  wherein said trenche is filled with a trench fill material.  
   
   
       15 . The circuit of  claim 14  wherein said trench fill material is amorphous silicon dioxide.  
   
   
       16 . The circuit of  claim 11 , further comprising: 
 a dielectric layer disposed over a top surface of the substrate, a surface of the dielectric layer acting as a stop for the trench.