Process modules for transport polymerization of low epsilon thin films

Abstract

A Process Module (“PM”) is designed to facilitate Transport Polymerization (“TP”) of precursors that are useful for preparations of low Dielectric Constant (“∈”) films. The PM consists primarily of a Material Delivery System (“MDS”) with a high temperature Vapor Phase Controller (“VFC”), a TP Reactor, a Treatment Chamber, a Deposition Chamber and a Pumping System. The PM is designed to facilitate TP for new precursors and for film deposition and stabilization processes.

1 . A process module for transport-polymerization (“TP”) of a precursor comprising: 
 (a) a material delivery subsystem adapted to deliver the precursor to a TP reactor;    (b) the TP reactor adapted to receive the precursor and to generate an intermediate;    (c) a deposition chamber designed to produce a polymer film onto a substrate under a vacuum; and    (d) one or more substrate pre-/post-treatment chambers designed to remove contamination from the substrate and to stabilize the polymer film on the substrate under the vacuum.    
   
   
       2 . The process modules of  claim 1 , further comprising a pump cold-trap in fluid communication with the deposition chamber to prevent organic residuals from passing from the deposition chamber into a pump system.  
   
   
       3 . The process module of  claim 2 , wherein the cold trap is at a temperature below −50° C. during the precursor deposition.  
   
   
       4 . The process modules of  claim 1 , further comprising a pump system in fluid communication with a pump cold-trap to provide the vacuum for the deposition chamber.  
   
   
       5 . The process modules of  claim 1 , further comprising a reactor cleaning subsystem mounted to the TP reactor to purge the reactor of organic residues.  
   
   
       6 . The process module of  claim 1 , further comprising a TP trap, interposing the TP reactor and the deposition chamber, and adapted to confine undesirable chemicals generated in the TP reactor.  
   
   
       7 . The process module of  claim 6 , wherein the TP Trap contains porous quartz and is maintains a temperature that is at least 10° C. higher than a ceiling temperature (“T cl ”) of reactive intermediates that are generated from the TP Reactor.  
   
   
       8 . The process module of  claim 6 , wherein the TP Trap comprises reactive metal turnings that are kept at a temperature ranging from 200° C. to 450° C.  
   
   
       9 . The process module of  claim 6 , wherein the TP Trap comprises reactive metal turnings that are kept at a temperature ranging from 300° C. to 350° C.  
   
   
       10 . The process module of  claim 9 , wherein the reactive metal turnings are copper or zinc.  
   
   
       11 . The process modules of  claim 1 , wherein the precursor has the following general chemical structure:  
     
       
         
         
             
             
         
       
     
     wherein, n o  or m are individually zero or an integer, and (n o +m) comprises an integer of at least 2 but no more than a total number of sp 2 C-X substitution on the aromatic-group-moiety (“AR”); 
 Ar is an aromatic or a fluorinated-aromatic group moiety;  
 Z′ and Z″ are similar or different, and individually a hydrogen, a fluorine, an alkyl group, a fluorinated alkyl group, a phenyl group or a fluorinated phenyl group;  
 X is a leaving group, and individually a —COOH, —I, —NR 2 , —N + R 3 , —SR, —SO 2 R, wherein R is an alkyl, a fluorinated alkyl, aromatic or fluorinated aromatic group; and  
 Y is a leaving group, and individually a —Cl, —Br, —I, —NR 2 , —N + R 3 , —SR, —SO 2 R, or —OR, wherein R is an alkyl, a fluorinated alkyl, aromatic or fluorinated aromatic group.  
 
   
   
       12 . The process module of  claim 11 , wherein a bonding energy between the leaving group (“(BE) L ”) and a core group of the precursor comprises a value less than 75 Kcal/Mole, and the range of the (BE) L  comprises a range of 20 to 45 Kcal/Mole lower than a bonding energy of a next weakest chemical bond energy (“(BE) c ”) present in the precursor.  
   
   
       13 . The process module of  claim 1 , wherein the material delivery subsystem comprises: 
 (a) a sample container for holding the precursor;    (b) a heater to vaporize the precursor; and    (c) a feed control component to regulate the flow rate of the vaporized precursor.    
   
   
       14 . The process module of  claim 13 , wherein the sample container comprises a non-corrosive material that can be heated from room temperature to 150° C.; and can withstand the vacuum.  
   
   
       15 . The process module of  claim 14 , wherein the non-corrosive material comprises borosilicate glass, stainless steel, or ceramic quartz.  
   
   
       16 . The process module of  claim 13 , wherein the feed control component comprises a liquid mass flow controller (“LMFC”) or a vapor flow controller (“VFC”).  
   
   
       17 . The process module of  claim 16 , wherein the LMFC delivers precursors at a rate in a range of 0.5 to 10 g/hour to a wafer.  
   
   
       18 . The process module of  claim 17 , wherein the rate of precursors delivery to a 200 mm wafer is in a range of 1.0 to 5 g/hour, and the rate of precursor delivery to a 300 mm is in a range of 2 to 10 g/hour.  
   
   
       19 . A method for cleaning a deactivated reactor having an organic residue comprising: 
 oxidizing the organic residues inside the deactivated reactor; and    purging the TP reactor with a gas.    
   
   
       20 . The method of  claim 19 , wherein the gas is nitrogen.