Method of processing substrate and chemical used in the same

Abstract

A method of processing a substrate, including a step of processing an organic film pattern formed on a substrate, the step including, in sequence, a removal step of removing one of an alterated layer and a deposited layer formed on the organic film pattern, and a fusion/deformation step of fusing the organic film pattern for deformation, wherein at least a part of the removal step is carried out by applying chemical to the organic film pattern.

1 . A method of processing a substrate, including a step of processing an organic film pattern formed on a substrate, 
 said step including, in sequence:    a removal step of removing one of an alterated layer and a deposited layer formed on said organic film pattern; and    a fusion/deformation step of fusing said organic film pattern for deformation,    wherein at least a part of said removal step is carried out by applying chemical to said organic film pattern.    
     
     
         2 . The method as set forth in  claim 1 , wherein only one of said alterated layer and said deposited layer is removed in said removal step.  
     
     
         3 . The method as set forth in  claim 1 , wherein said alterated layer is caused by at least one of degradation of a surface of said organic film pattern caused by being aged, thermal oxidation, and thermal hardening.  
     
     
         4 . The method as set forth in  claim 1 , wherein said alterated layer is caused by wet-etching with wet-etchant.  
     
     
         5 . The method as set forth in  claim 1 , wherein said alterated layer is caused by dry-etching or ashing.  
     
     
         6 . The method as set forth in  claim 1 , wherein said alterated layer is caused by deposition caused by dry-etching.  
     
     
         7 . The method as set forth in  claim 1 , wherein said deposited layer is caused by dry-etching.  
     
     
         8 . The method as set forth in  claim 1 , further comprising a patterning step of patterning an underlying layer formed below said organic film pattern, with said organic film pattern before said fusion/deformation step is applied thereto, being used as a mask.  
     
     
         9 . The method as set forth in  claim 1 , further comprising a patterning step of patterning an underlying layer formed below said organic film pattern, with said organic film pattern to which said fusion/deformation step was applied, being used as a mask.  
     
     
         10 . The method as set forth in  claim 1 , wherein said fusion/deformation step is comprised of a step of enlarging an area of said organic film pattern.  
     
     
         11 . The method as set forth in  claim 10 , wherein said fusion/deformation step is comprised of a step of integrating adjacent organic film patterns with each other.  
     
     
         12 . The method as set forth in  claim 1 , wherein said fusion/deformation step is comprised of a step of planarizing said organic film pattern.  
     
     
         13 . The method as set forth in  claim 1 , wherein said fusion/deformation step is comprised of a step of deforming said organic film pattern such that said organic film pattern acts as an electrically insulating film covering therewith a circuit pattern formed on said substrate.  
     
     
         14 . The method as set forth in  claim 1 , wherein said fusion/deformation step is comprised of a step of applying gas atmosphere to said organic film pattern.  
     
     
         15 . The method as set forth in  claim 14 , wherein said gas atmosphere is of organic solvent.  
     
     
         16 . The method as set forth in  claim 1 , wherein said fusion/deformation step is entirely carried out by applying said chemical to said organic film pattern.  
     
     
         17 . The method as set forth in  claim 1 , wherein said removal step is comprised, in sequence, of a step of ashing said organic film pattern, and a step of applying said chemical to said organic film pattern.  
     
     
         18 . The method as set forth in  claim 1 , wherein chemical contains at least acid chemical.  
     
     
         19 . The method as set forth in  claim 1 , wherein chemical contains at least organic solvent.  
     
     
         20 . The method as set forth in  claim 1 , wherein chemical contains at least alkaline chemical.  
     
     
         21 . The method as set forth in  claim 19 , wherein said organic solvent contains at least amine.  
     
     
         22 . The method as set forth in  claim 1 , wherein said chemical contains at least organic solvent and amine.  
     
     
         23 . The method as set forth in  claim 20 , wherein said alkaline chemical contains at least amine and water.  
     
     
         24 . The method as set forth in  claim 1 , wherein said chemical contains at least alkaline chemical and amine.  
     
     
         25 . The method as set forth in  claim 21 , wherein said amine is selected from a group consisting of monoethyl amine, diethyl amine, triethyl amine, monoisopyl amine, diisopyl amine, triisoply amine, monobutyl amine, dibutyl amine, tributyl amine, hydroxylamine, diethylhydroxylamine, diethylhydroxylamine anhydride, pyridine, and picoline.  
     
     
         26 . The method as set forth in  claim 1 , wherein said chemical contains said amine in the range of 0.01 to 10 weight % both inclusive.  
     
     
         27 . The method as set forth in  claim 1 , wherein said chemical contains said amine in the range of 0.05 to 3 weight % both inclusive.  
     
     
         28 . The method as set forth in  claim 1 , wherein said chemical contains said amine in the range of 0.05 to 1.5 weight % both inclusive.  
     
     
         29 . The method as set forth in  claim 1 , wherein said chemical contains anticorrosive.  
     
     
         30 . The method as set forth in  claim 1 , wherein said chemical has a function of developing said organic film pattern.  
     
     
         31 . The method as set forth in  claim 30 , wherein said chemical is comprised of TMAH (tetramethylammonium hydroxide) or inorganic alkaline aqueous solution.  
     
     
         32 . The method as set forth in  claim 31 , wherein said inorganic alkaline aqueous solution is selected from NaOH and CaOH.  
     
     
         33 . The method as set forth in  claim 30 , wherein said removal step is comprised, in sequence, of: 
 exposing said organic film pattern to a light; and    developing said organic film pattern by applying said chemical to said organic film pattern.    
     
     
         34 . The method as set forth in  claim 30 , wherein said removal step is comprised, in sequence, of: 
 ashing said organic film pattern;    exposing said organic film pattern to a light; and    developing said organic film pattern by applying said chemical to said organic film pattern.    
     
     
         35 . The method as set forth in  claim 30 , wherein said removal step is comprised, in sequence, of: 
 exposing said organic film pattern to a light;    ashing said organic film pattern; and    developing said organic film pattern by applying said chemical to said organic film pattern.    
     
     
         36 . The method as set forth in  claim 30 , wherein said removal step is comprised, in sequence, of: 
 exposing said organic film pattern to a light;    applying said chemical to said organic film pattern without developing said organic film pattern; and    developing said organic film pattern by applying said chemical to said organic film pattern.    
     
     
         37 . The method as set forth in  claim 30 , wherein said removal step is comprised, in sequence, of: 
 ashing said organic film pattern;    exposing said organic film pattern to a light;    applying said chemical to said organic film pattern without developing said organic film pattern; and    developing said organic film pattern by applying said chemical to said organic film pattern.    
     
     
         38 . The method as set forth in  claim 30 , wherein said removal step is comprised, in sequence, of: 
 exposing said organic film pattern to a light;    ashing said organic film pattern;    applying said chemical to said organic film pattern without developing said organic film pattern; and    developing said organic film pattern by applying said chemical to said organic film pattern.    
     
     
         39 . The method as set forth in  claim 30 , wherein said removal step is comprised, in sequence, of: 
 ashing said organic film pattern;    applying said chemical to said organic film pattern without developing said organic film pattern;    exposing said organic film pattern to a light; and    developing said organic film pattern by applying said chemical to said organic film pattern.    
     
     
         40 . The method as set forth in  claim 33 , wherein said organic film pattern is exposed to a light only in an area associated with a predetermined area of said substrate.  
     
     
         41 . The method as set forth in  claim 40 , wherein said organic film pattern is exposed to a light in said area by radiating a light entirely over said area or by scanning said area with a spot-light.  
     
     
         42 . The method as set forth in  claim 40 , wherein said predetermined area has an area equal to or greater than {fraction (1/10)} of an area of said substrate.  
     
     
         43 . The method as set forth in  claim 40 , wherein said organic film pattern is exposed to ultra-violet rays, fluorescence, or natural light.  
     
     
         44 . The method as set forth in  claim 30 , wherein said removal step is comprised, in sequence, of: 
 applying said chemical to said organic film pattern without developing said organic film pattern; and    developing said organic film pattern by applying said chemical to said organic film pattern.    
     
     
         45 . The method as set forth in  claim 30 , wherein said removal step is comprised, in sequence, of: 
 ashing said organic film pattern; and    developing said organic film pattern by applying said chemical to said organic film pattern.    
     
     
         46 . The method as set forth in  claim 30 , wherein said removal step is comprised, in sequence, of: 
 ashing said organic film pattern;    applying said chemical to said organic film pattern without developing said organic film pattern; and    developing said organic film pattern by applying said chemical to said organic film pattern.    
     
     
         47 . The method as set forth in  claim 5 , wherein said ashing is comprised of a step of etching a film formed on said substrate with at least one of plasma, ozone and ultra-violet ray.  
     
     
         48 . The method as set forth in  claim 1 , wherein said organic film pattern formed originally on said substrate has at least two portions having different thicknesses to one another.  
     
     
         49 . The method as set forth in  claim 30 , wherein said organic film pattern formed originally on said substrate has at least two portions having different thicknesses to one another, and a thickness of a portion having a small thickness is further reduced by developing said organic film pattern.  
     
     
         50 . The method as set forth in  claim 30 , wherein said organic film pattern formed originally on said substrate has at least two portions having different thicknesses to one another, and a portion having a small thickness is selectively removed by developing said organic film pattern.  
     
     
         51 . The method as set forth in  claim 49 , wherein said organic film pattern is kept not exposed to a light until said chemical is applied to said organic film pattern.  
     
     
         52 . The method as set forth in  claim 30 , wherein said organic film pattern is kept not exposed to a light until said chemical is applied to said organic film pattern.  
     
     
         53 . A method of processing a substrate, including a step of processing an organic film pattern formed on a substrate, 
 said step including, in sequence:    a removal step of removing an alterated layer formed on said organic film pattern to expose a non-alterated portion of said organic film pattern; and a fusion/deformation step of fusing said organic film pattern for deformation,    wherein at least a part of said removal step is carried out by applying chemical to said organic film pattern.    
     
     
         54 . The method as set forth in  claim 53 , wherein said alterated layer is caused by at least one of degradation of a surface of said organic film pattern caused by being aged, thermal oxidation, and thermal hardening.  
     
     
         55 . The method as set forth in  claim 53 , wherein said alterated layer is caused by wet-etching with wet-etchant.  
     
     
         56 . The method as set forth in  claim 53 , wherein said alterated layer is caused by dry-etching or ashing.  
     
     
         57 . The method as set forth in  claim 53 , wherein said alterated layer is caused by deposition caused by dry-etching.  
     
     
         58 . The method as set forth in  claim 53 , further comprising a patterning step of patterning an underlying layer formed below said organic film pattern, with said organic film pattern before said fusion/deformation step is applied thereto, being used as a mask.  
     
     
         59 . The method as set forth in  claim 53 , further comprising a patterning step of patterning an underlying layer formed below said organic film pattern, with said organic film pattern to which said fusion/deformation step was applied, being used as a mask.  
     
     
         60 . The method as set forth in  claim 53 , wherein said fusion/deformation step is comprised of a step of enlarging an area of said organic film pattern.  
     
     
         61 . The method as set forth in  claim 60 , wherein said fusion/deformation step is comprised of a step of integrating adjacent organic film patterns with each other.  
     
     
         62 . The method as set forth in  claim 53 , wherein said fusion/deformation step is comprised of a step of planarizing said organic film pattern.  
     
     
         63 . The method as set forth in  claim 53 , wherein said fusion/deformation step is comprised of a step of deforming said organic film pattern such that said organic film pattern acts as an electrically insulating film covering therewith a circuit pattern formed on said substrate.  
     
     
         64 . The method as set forth in  claim 53 , wherein said fusion/deformation step is comprised of a step of applying gas atmosphere to said organic film pattern.  
     
     
         65 . The method as set forth in  claim 64 , wherein said gas atmosphere is of organic solvent.  
     
     
         66 . The method as set forth in  claim 53 , wherein said fusion/deformation step is entirely carried out by applying said chemical to said organic film pattern.  
     
     
         67 . The method as set forth in  claim 53 , wherein said removal step is comprised, in sequence, of a step of ashing said organic film pattern, and a step of applying said chemical to said organic film pattern.  
     
     
         68 . The method as set forth in  claim 53 , wherein chemical contains at least acid chemical.  
     
     
         69 . The method as set forth in  claim 53 , wherein chemical contains at least organic solvent.  
     
     
         70 . The method as set forth in  claim 53 , wherein chemical contains at least alkaline chemical.  
     
     
         71 . The method as set forth in  claim 69 , wherein said organic solvent contains at least amine.  
     
     
         72 . The method as set forth in  claim 53 , wherein chemical contains at least organic solvent and amine.  
     
     
         73 . The method as set forth in  claim 70 , wherein said alkaline chemical contains at least amine and water.  
     
     
         74 . The method as set forth in  claim 53 , wherein said chemical contains at least alkaline chemical and amine.  
     
     
         75 . The method as set forth in  claim 71 , wherein said amine is selected from a group consisting of monoethyl amine, diethyl amine, triethyl amine, monoisopyl amine, diisopyl amine, triisoply amine, monobutyl amine, dibutyl amine, tributyl amine, hydroxylamine, diethylhydroxylamine, diethylhydroxylamine anhydride, pyridine, and picoline.  
     
     
         76 . The method as set forth in  claim 53 , wherein said chemical contains said amine in the range of 0.01 to 10 weight % both inclusive.  
     
     
         77 . The method as set forth in  claim 53 , wherein said chemical contains said amine in the range of 0.05 to 3 weight % both inclusive.  
     
     
         78 . The method as set forth in  claim 53 , wherein said chemical contains said amine in the range of 0.05 to 1.5 weight % both inclusive.  
     
     
         79 . The method as set forth in  claim 53 , wherein said chemical contains anticorrosive.  
     
     
         80 . The method as set forth in  claim 53 , wherein said chemical has a function of developing said organic film pattern.  
     
     
         81 . The method as set forth in  claim 80 , wherein said chemical is comprised of TMAH (tetramethylammonium hydroxide) or inorganic alkaline aqueous solution.  
     
     
         82 . The method as set forth in  claim 81 , wherein said inorganic alkaline aqueous solution is selected from NaOH and CaOH.  
     
     
         83 . The method as set forth in  claim 80 , wherein said removal step is comprised, in sequence, of: 
 exposing said organic film pattern to a light; and    developing said organic film pattern by applying said chemical to said organic film pattern.    
     
     
         84 . The method as set forth in  claim 80 , wherein said removal step is comprised, in sequence, of: 
 ashing said organic film pattern;    exposing said organic film pattern to a light; and    developing said organic film pattern by applying said chemical to said organic film pattern.    
     
     
         85 . The method as set forth in  claim 80 , wherein said removal step is comprised, in sequence, of: 
 exposing said organic film pattern to a light;    ashing said organic film pattern; and    developing said organic film pattern by applying said chemical to said organic film pattern.    
     
     
         86 . The method as set forth in  claim 80 , wherein said removal step is comprised, in sequence, of: 
 exposing said organic film pattern to a light;    applying said chemical to said organic film pattern without developing said organic film pattern; and    developing said organic film pattern by applying said chemical to said organic film pattern.    
     
     
         87 . The method as set forth in  claim 80 , wherein said removal step is comprised, in sequence, of: 
 ashing said organic film pattern; and    exposing said organic film pattern to a light;    applying said chemical to said organic film pattern without developing said organic film pattern; and    developing said organic film pattern by applying said chemical to said organic film pattern.    
     
     
         88 . The method as set forth in  claim 80 , wherein said removal step is comprised, in sequence, of: 
 exposing said organic film pattern to a light;    ashing said organic film pattern; and    applying said chemical to said organic film pattern without developing said organic film pattern; and    developing said organic film pattern by applying said chemical to said organic film pattern.    
     
     
         89 . The method as set forth in  claim 80 , wherein said removal step is comprised, in sequence, of: 
 ashing said organic film pattern; and    applying said chemical to said organic film pattern without developing said organic film pattern; and    exposing said organic film pattern to a light;    developing said organic film pattern by applying said chemical to said organic film pattern.    
     
     
         90 . The method as set forth in  claim 83 , wherein said organic film pattern is exposed to a light only in an area associated with a predetermined area of said substrate.  
     
     
         91 . The method as set forth in  claim 90 , wherein said organic film pattern is exposed to a light in said area by radiating a light entirely over said area or by scanning said area with a spot-light.  
     
     
         92 . The method as set forth in  claim 90 , wherein said predetermined area has an area equal to or greater than {fraction (1/10)} of an area of said substrate.  
     
     
         93 . The method as set forth in  claim 90 , wherein said organic film pattern is exposed to ultra-violet rays, fluorescence, or natural light.  
     
     
         94 . The method as set forth in  claim 80 , wherein said removal step is comprised, in sequence, of: 
 applying said chemical to said organic film pattern without developing said organic film pattern; and    developing said organic film pattern by applying said chemical to said organic film pattern.    
     
     
         95 . The method as set forth in  claim 80 , wherein said removal step is comprised, in sequence, of: 
 ashing said organic film pattern; and    developing said organic film pattern by applying said chemical to said organic film pattern.    
     
     
         96 . The method as set forth in  claim 80 , wherein said removal step is comprised, in sequence, of: 
 ashing said organic film pattern;    applying said chemical to said organic film pattern without developing said organic film pattern; and    developing said organic film pattern by applying said chemical to said organic film pattern.    
     
     
         97 . The method as set forth in  claim 56 , wherein said ashing is comprised of a step of etching a film formed on said substrate with at least one of plasma, ozone and ultra-violet ray.  
     
     
         98 . The method as set forth in  claim 53 , wherein said organic film pattern formed originally on said substrate has at least two portions having different thicknesses to one another.  
     
     
         99 . The method as set forth in  claim 80 , wherein said organic film pattern formed originally on said substrate has at least two portions having different thicknesses to one another, and a thickness of a portion having a small thickness is further reduced by developing said organic film pattern.  
     
     
         100 . The method as set forth in  claim 80 , wherein said organic film pattern formed originally on said substrate has at least two portions having different thicknesses to one another, and a portion having a small thickness is selectively removed by developing said organic film pattern.  
     
     
         101 . The method as set forth in  claim 99 , wherein said organic film pattern is kept not exposed to a light until said chemical is applied to said organic film pattern.  
     
     
         102 . The method as set forth in  claim 80 , wherein said organic film pattern is kept not exposed to a light until said chemical is applied to said organic film pattern.  
     
     
         103 . A method of processing a substrate, including a step of processing an organic film pattern formed on a substrate, 
 said step including, in sequence:    a removal step of removing a deposited layer formed on said organic film pattern to expose said organic film pattern; and    a fusion/deformation step of fusing said organic film pattern for deformation,    wherein at least a part of said removal step is carried out by applying chemical to said organic film pattern.    
     
     
         104 . The method as set forth in  claim 103 , wherein said deposited layer is caused by dry-etching said organic film pattern.  
     
     
         105 . The method as set forth in  claim 103 , further comprising a patterning step of patterning an underlying layer formed below said organic film pattern, with said organic film pattern before said fusion/deformation step is applied thereto, being used as a mask.  
     
     
         106 . The method as set forth in  claim 103 , further comprising a patterning step of patterning an underlying layer formed below said organic film pattern, with said organic film pattern to which said fusion/deformation step was applied, being used as a mask.  
     
     
         107 . The method as set forth in  claim 103 , wherein said fusion/deformation step is comprised of a step of enlarging an area of said organic film pattern.  
     
     
         108 . The method as set forth in  claim 103 , wherein said fusion/deformation step is comprised of a step of integrating adjacent organic film patterns with each other.  
     
     
         109 . The method as set forth in  claim 103 , wherein said fusion/deformation step is comprised of a step of planarizing said organic film pattern.  
     
     
         110 . The method as set forth in  claim 103 , wherein said fusion/deformation step is comprised of a step of deforming said organic film pattern such that said organic film pattern acts as an electrically insulating film covering therewith a circuit pattern formed on said substrate.  
     
     
         111 . The method as set forth in  claim 103 , wherein said fusion/deformation step is comprised of a step of applying gas atmosphere to said organic film pattern.  
     
     
         112 . The method as set forth in  claim 111 , wherein said gas atmosphere is of organic solvent.  
     
     
         113 . The method as set forth in  claim 103 , wherein said fusion/deformation step is entirely carried out by applying said chemical to said organic film pattern.  
     
     
         114 . The method as set forth in  claim 103 , wherein said removal step is comprised, in sequence, of a step of ashing said organic film pattern, and a step of applying said chemical to said organic film pattern.  
     
     
         115 . The method as set forth in  claim 103 , wherein chemical contains at least acid chemical.  
     
     
         116 . The method as set forth in  claim 103 , wherein chemical contains at least organic solvent.  
     
     
         117 . The method as set forth in  claim 103 , wherein chemical contains at least alkaline chemical.  
     
     
         118 . The method as set forth in  claim 116 , wherein said organic solvent contains at least amine.  
     
     
         119 . The method as set forth in  claim 103 , wherein chemical contains at least organic solvent and amine.  
     
     
         120 . The method as set forth in  claim 117 , wherein said alkaline chemical contains at least amine and water.  
     
     
         121 . The method as set forth in  claim 103 , wherein said chemical contains at least alkaline chemical and amine.  
     
     
         122 . The method as set forth in  claim 118 , wherein said amine is selected from a group consisting of monoethyl amine, diethyl amine, triethyl amine, monoisopyl amine, diisopyl amine, triisoply amine, monobutyl amine, dibutyl amine, tributyl amine, hydroxylamine, diethylhydroxylamine, diethylhydroxyl amine anhydride, pyridine, and picoline.  
     
     
         123 . The method as set forth in  claim 103 , wherein said chemical contains said amine in the range of 0.01 to 10 weight % both inclusive.  
     
     
         124 . The method as set forth in  claim 103 , wherein said chemical contains said amine in the range of 0.05 to 3 weight % both inclusive.  
     
     
         125 . The method as set forth in  claim 103 , wherein said chemical contains said amine in the range of 0.05 to 1.5 weight % both inclusive.  
     
     
         126 . The method as set forth in  claim 103 , wherein said chemical contains anticorrosive.  
     
     
         127 . The method as set forth in  claim 103 , wherein said chemical has a function of developing said organic film pattern.  
     
     
         128 . The method as set forth in  claim 127 , wherein said chemical is comprised of TMAH (tetramethylammonium hydroxide) or inorganic alkaline aqueous solution.  
     
     
         129 . The method as set forth in  claim 128 , wherein said inorganic alkaline aqueous solution is selected from NaOH and CaOH.  
     
     
         130 . The method as set forth in  claim 127 , wherein said removal step is comprised, in sequence, of: 
 exposing said organic film pattern to a light; and    developing said organic film pattern by applying said chemical to said organic film pattern.    
     
     
         131 . The method as set forth in  claim 127 , wherein said removal step is comprised, in sequence, of: 
 ashing said organic film pattern;    exposing said organic film pattern to a light; and    developing said organic film pattern by applying said chemical to said organic film pattern.    
     
     
         132 . The method as set forth in  claim 127 , wherein said removal step is comprised, in sequence, of: 
 exposing said organic film pattern to a light;    ashing said organic film pattern; and    developing said organic film pattern by applying said chemical to said organic film pattern.    
     
     
         133 . The method as set forth in  claim 127 , wherein said removal step is comprised, in sequence, of: 
 exposing said organic film pattern to a light;    applying said chemical to said organic film pattern without developing said organic film pattern; and    developing said organic film pattern by applying said chemical to said organic film pattern.    
     
     
         134 . The method as set forth in  claim 127 , wherein said removal step is comprised, in sequence, of: 
 ashing said organic film pattern; and    exposing said organic film pattern to a light;    applying said chemical to said organic film pattern without developing said organic film pattern; and    developing said organic film pattern by applying said chemical to said organic film pattern.    
     
     
         135 . The method as set forth in  claim 127 , wherein said removal step is comprised, in sequence, of: 
 exposing said organic film pattern to a light;    ashing said organic film pattern; and    applying said chemical to said organic film pattern without developing said organic film pattern; and    developing said organic film pattern by applying said chemical to said organic film pattern.    
     
     
         136 . The method as set forth in  claim 127 , wherein said removal step is comprised, in sequence, of: 
 ashing said organic film pattern; and    applying said chemical to said organic film pattern without developing said organic film pattern; and    exposing said organic film pattern to a light;    developing said organic film pattern by applying said chemical to said organic film pattern.    
     
     
         137 . The method as set forth in  claim 130 , wherein said organic film pattern is exposed to a light only in an area associated with a predetermined area of said substrate.  
     
     
         138 . The method as set forth in  claim 137 , wherein said organic film pattern is exposed to a light in said area by radiating a light entirely over said area or by scanning said area with a spot-light.  
     
     
         139 . The method as set forth in  claim 137 , wherein said predetermined area has an area equal to or greater than {fraction (1/10)} of an area of said substrate.  
     
     
         140 . The method as set forth in  claim 137 , wherein said organic film pattern is exposed to ultra-violet rays, fluorescence, or natural light.  
     
     
         141 . The method as set forth in  claim 127 , wherein said removal step is comprised, in sequence, of: 
 applying said chemical to said organic film pattern without developing said organic film pattern; and    developing said organic film pattern by applying said chemical to said organic film pattern.    
     
     
         142 . The method as set forth in  claim 127 , wherein said removal step is comprised, in sequence, of: 
 ashing said organic film pattern; and    developing said organic film pattern by applying said chemical to said organic film pattern.    
     
     
         143 . The method as set forth in  claim 127 , wherein said removal step is comprised, in sequence, of: 
 ashing said organic film pattern;    applying said chemical to said organic film pattern without developing said organic film pattern; and    developing said organic film pattern by applying said chemical to said organic film pattern.    
     
     
         144 . The method as set forth in  claim 114 , wherein said organic film pattern is ashed with at least one of plasma, ozone and ultra-violet ray.  
     
     
         145 . The method as set forth in  claim 103 , wherein said organic film pattern formed originally on said substrate has at least two portions having different thicknesses to one another.  
     
     
         146 . The method as set forth in  claim 127 , wherein said organic film pattern formed originally on said substrate has at least two portions having different thicknesses to one another, and a thickness of a portion having a small thickness is further reduced by developing said organic film pattern.  
     
     
         147 . The method as set forth in  claim 127 , wherein said organic film pattern formed originally on said substrate has at least two portions having different thicknesses to one another, and a portion having a small thickness is selectively removed by developing said organic film pattern.  
     
     
         148 . The method as set forth in  claim 146 , wherein said organic film pattern is kept not exposed to a light until said chemical is applied to said organic film pattern.  
     
     
         149 . The method as set forth in  claim 127 , wherein said organic film pattern is kept not exposed to a light until said chemical is applied to said organic film pattern.  
     
     
         150 . A chemical containing amine, used in a method of processing an organic film pattern formed on a substrate, said method including, in sequence: 
 a removal step of removing one of an alterated layer and a deposited layer formed on said organic film pattern; and    a fusion/deformation step of fusing said organic film pattern for deformation,    wherein at least a part of said removal step is carried out by applying said chemical to said organic film pattern, and    said chemical contains said amine in the range of 0.01 to 10 weight % both inclusive.    
     
     
         151 . The chemical as set forth in  claim 150 , wherein said chemical contains said amine in the range of 0.05 to 3 weight % both inclusive.  
     
     
         152 . The chemical as set forth in  claim 150 , wherein said chemical contains said amine in the range of 0.05 to 1.5 weight % both inclusive.  
     
     
         153 . The chemical as set forth in  claim 150 , wherein said amine is selected from a group consisting of hydroxylamine, diethylhydroxylamine, diethylhydroxylamine anhydride, pyridine, and picoline.  
     
     
         154 . A chemical containing amine, used in a method of processing an organic film pattern formed on a substrate, said method including, in sequence: 
 a removal step of removing an alterated layer formed on said organic film pattern to expose a non-alterated portion of said organic film pattern; and    a fusion/deformation step of fusing said organic film pattern for deformation,    wherein at least a part of said removal step is carried out by applying chemical to said organic film pattern, and    said chemical contains said amine in the range of 0.01 to 10 weight % both inclusive.    
     
     
         155 . The chemical as set forth in  claim 154 , wherein said chemical contains said amine in the range of 0.05 to 3 weight % both inclusive.  
     
     
         156 . The chemical as set forth in  claim 154 , wherein said chemical contains said amine in the range of 0.05 to 1.5 weight % both inclusive.  
     
     
         157 . The chemical as set forth in  claim 154 , wherein said amine is selected from a group consisting of hydroxylamine, diethylhydroxylamine, diethylhydroxylamine anhydride, pyridine, and picoline.  
     
     
         158 . A chemical containing amine, used in a method of processing an organic film pattern formed on a substrate, said method including, in sequence: 
 a removal step of removing a deposited layer formed on said organic film pattern to expose said organic film pattern; and    a fusion/deformation step of fusing said organic film pattern for deformation,    wherein at least a part of said removal step is carried out by applying chemical to said organic film pattern, and    said chemical contains said amine in the range of 0.01 to 10 weight % both inclusive.    
     
     
         159 . The chemical as set forth in  claim 158 , wherein said chemical contains said amine in the range of 0.05 to 3 weight % both inclusive.  
     
     
         160 . The chemical as set forth in  claim 158 , wherein said chemical contains said amine in the range of 0.05 to 1.5 weight % both inclusive.  
     
     
         161 . The chemical as set forth in  claim 158 , wherein said amine is selected from a group consisting of hydroxylamine, diethylhydroxylamine, diethylhydroxylamine anhydride, pyridine, and picoline.