Method of fabricating SiC semiconductor device

Abstract

In a method of fabricating a SiC semiconductor device, a surface of a SiC layer ( 5, 48, 102 ) is processed into a cleaned surface terminated at Si. An oxide film ( 7, 49, 105 ) is formed on the cleaned surface of the SiC layer. The SiC layer with the oxide film is subjected to thermal oxidation at a temperature in a range of 700° C. to 900° C. so that only terminal Si at the cleaned surface of the SiC layer is oxidated and an interface between the oxide film and the SiC layer becomes an SiO 2 /SiC cleaned interface.

1 - 8 . (Cancelled).  
     
     
         9 . A method of fabricating a SiC semiconductor device, comprising 
 processing a surface of a SiC layer into a cleaned surface terminated at Si; and    thermally oxidating a surface portion of the SiC layer, which includes the cleaned surface thereof, at a temperature in a range of 1000 C° to 1400 C° to form an oxide film on the resultant SiC layer.    
     
     
         10 . A method as recited in claim  7 , wherein the thermal oxidation includes an oxidation process using one of O 2 , H 2 O, O 3 , and oxygen radical.  
     
     
         11 - 37 . (Cancelled).